Patents by Inventor Jaewoo Shim

Jaewoo Shim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210327758
    Abstract: Embodiments of this disclosure include apparatus, systems, and methods for fabricating monolayers. In one example, a method includes forming a multilayer film having a plurality of monolayers of a two-dimensional (2D) material on a growth substrate. The multilayer film has a first side proximate the growth substrate and a second side opposite the first side.
    Type: Application
    Filed: August 23, 2019
    Publication date: October 21, 2021
    Applicant: Massachusetts Institute of Technology
    Inventors: Jeehwan Kim, Wei Kong, Jaewoo Shim
  • Patent number: 10840347
    Abstract: Provided is a semiconductor device with negative differential transconductance. The semiconductor device includes a substrate, a gate electrode formed on the substrate, an insulating layer formed on the gate electrode, a source electrode material layer formed on the insulating layer, a semiconductor material layer formed on the insulating layer to be hetero-joined to the source electrode material layer, a source electrode formed on the source electrode material layer, and a drain electrode formed on the semiconductor material layer. A work function of the source electrode material layer is controlled by a gate voltage applied through the gate electrode, and the source electrode material layer shows negative differential transconductance depending on a level of the gate voltage.
    Type: Grant
    Filed: June 12, 2018
    Date of Patent: November 17, 2020
    Assignee: Research & Business Foundation Sungkyunkwan University
    Inventors: Jin Hong Park, Jaewoo Shim, Dong Ho Kang
  • Patent number: 10566389
    Abstract: Provided is a multi-negative differential resistance device. The multi-negative differential resistance device includes a first negative differential resistance device and a second negative differential resistance device connected in parallel with the first negative differential resistance device, and a peak and a valley of the first negative differential resistance device and a peak and a valley of the second negative differential resistance device are synthesized, and, thus, the multi-negative differential resistance device has two peaks and two valleys.
    Type: Grant
    Filed: June 12, 2018
    Date of Patent: February 18, 2020
    Assignee: Research & Business Foundation Sungkyunkwan University
    Inventors: Jin Hong Park, Jaewoo Shim, Hae Won Lee
  • Publication number: 20180358446
    Abstract: Provided is a semiconductor device with negative differential transconductance. The semiconductor device includes a substrate, a gate electrode formed on the substrate, an insulating layer formed on the gate electrode, a source electrode material layer formed on the insulating layer, a semiconductor material layer formed on the insulating layer to be hetero-joined to the source electrode material layer, a source electrode formed on the source electrode material layer, and a drain electrode formed on the semiconductor material layer. A work function of the source electrode material layer is controlled by a gate voltage applied through the gate electrode, and the source electrode material layer shows negative differential transconductance depending on a level of the gate voltage.
    Type: Application
    Filed: June 12, 2018
    Publication date: December 13, 2018
    Applicant: RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
    Inventors: Jin Hong PARK, Jaewoo SHIM, Dong Ho KANG
  • Publication number: 20180358412
    Abstract: Provided is a multi-negative differential resistance device. The multi-negative differential resistance device includes a first negative differential resistance device and a second negative differential resistance device connected in parallel with the first negative differential resistance device, and a peak and a valley of the first negative differential resistance device and a peak and a valley of the second negative differential resistance device are synthesized, and, thus, the multi-negative differential resistance device has two peaks and two valleys.
    Type: Application
    Filed: June 12, 2018
    Publication date: December 13, 2018
    Applicant: Research & Business Foundation Sungkyunwan University
    Inventors: Jin Hong PARK, Jaewoo SHIM, Hae Won LEE
  • Publication number: 20100194685
    Abstract: An information processing apparatus including a key input device and a sensing unit that detects motion and/or sound to adjust a position of a mouse pointer on a display
    Type: Application
    Filed: May 19, 2009
    Publication date: August 5, 2010
    Inventor: Jaewoo Shim
  • Publication number: 20100194688
    Abstract: An information processing apparatus including a sensing unit that functions as a mouse, the apparatus including a main body with a key input device; a sensing unit installed in one side of the key input device and detecting the user's operation to adjust a position of a mouse pointer on a display; and a pad disposed on the upper side of the sensing unit and movable to change the position of the mouse pointer on the display, thereby providing a user with the prompt and easy manipulation of the mouse pointer.
    Type: Application
    Filed: May 12, 2009
    Publication date: August 5, 2010
    Inventor: Jaewoo Shim