Patents by Inventor Jaeyeong Heo

Jaeyeong Heo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9090477
    Abstract: A method of manufacturing silica nanowires includes: providing an object to be processed into a reaction chamber; supplying a precursor having a heteroleptic structure, which has a chemical formula SiA2B2 (A and B are different functional groups), into the reaction chamber; supplying an oxygen-containing gas that preferentially reacts with any one of the functional groups A and B of the precursor; and growing an intermediate on a surface of the object to be processed due to a reaction between the precursor and the oxygen-containing gas.
    Type: Grant
    Filed: December 30, 2010
    Date of Patent: July 28, 2015
    Assignee: SNU R&DB FOUNDATION
    Inventors: Sanghyun Park, Jaeyeong Heo, Hyeong Joon Kim
  • Patent number: 8796483
    Abstract: Novel cyclic amides containing tin or lead are disclosed. These cyclic amides can be used for atomic layer deposition or chemical vapor deposition of tin or lead as well as their oxides, sulfides, selenides, nitrides, phosphides, carbides, silicides or borides or other compounds. Tin(IV) oxide, SnO2, films were deposited by reaction of a cyclic tin amide vapor and H2O2 or NO2 as oxygen sources. The films have high purity, smoothness, transparency, electrical conductivity, density, and uniform thickness even inside very narrow holes or trenches. Deposition temperatures are low enough for thermally sensitive substrates such as plastics. Suitable applications of these films include displays, light-emitting diodes, solar cells and gas sensors. Doping SnO2 with aluminum was used to reduce its conductivity, making material suitable as the active semiconductor layer in electron multipliers or transparent transistors.
    Type: Grant
    Filed: March 31, 2011
    Date of Patent: August 5, 2014
    Assignee: President and Fellows of Harvard College
    Inventors: Roy G. Gordon, Adam S. Hock, Jaeyeong Heo, Prasert Sinsermsuksakul
  • Publication number: 20120027937
    Abstract: Novel cyclic amides containing tin or lead are disclosed. These cyclic amides can be used for atomic layer deposition or chemical vapor deposition of tin or lead as well as their oxides, sulfides, selenides, nitrides, phosphides, carbides, silicides or borides or other compounds. Tin(IV) oxide, SnO2, films were deposited by reaction of a cyclic tin amide vapor and H2O2 or NO2 as oxygen sources. The films have high purity, smoothness, transparency, electrical conductivity, density, and uniform thickness even inside very narrow holes or trenches. Deposition temperatures are low enough for thermally sensitive substrates such as plastics. Suitable applications of these films include displays, light-emitting diodes, solar cells and gas sensors. Doping SnO2 with aluminum was used to reduce its conductivity, making material suitable as the active semiconductor layer in electron multipliers or transparent transistors.
    Type: Application
    Filed: March 31, 2011
    Publication date: February 2, 2012
    Inventors: Roy G. Gordon, Adam S. Hock, Jaeyeong Heo, Prasert Sinsermsuksakul
  • Publication number: 20110159286
    Abstract: Provided is a method of manufacturing silica nanowires. The method includes: providing an object to be processed into a reaction chamber; supplying a precursor having a heteroleptic structure, which has a chemical forma SiA2B2 (A and B are different functional groups), into the reaction chamber; supplying an oxygen-containing gas that preferentially reacts with any one of the functional groups A and B of the precursor; and growing an intermediate on a surface of the object to be processed due to a reaction between the precursor and the oxygen-containing gas.
    Type: Application
    Filed: December 30, 2010
    Publication date: June 30, 2011
    Applicant: ISNU R&DB FOUNDATION
    Inventors: Sanghyun Park, Jaeyeong Heo, Hyeong Joon Kim