Abstract: The present disclosure provides a lighting-on device and a method for cell test. The lighting-on device includes a movable unit including a first marker; an image acquisition unit configured to acquire an image indicating an actual relative positional relationship between the first marker and a second marker on a display panel; a calculation unit configured to calculate the actual relative positional relationship between the first marker and the second marker according to the image; a first position adjustment unit configured to drive the movable unit so as to adjust the actual relative positional relationship; and a first control unit configured to determine whether the adjusted actual relative positional relationship has been aligned by the first position adjustment unit according to the relative positional relationship between the first marker and the second marker.

Abstract: The present disclosure provides a shorting bar structure and a method for manufacturing the same, and a Thin Film Transistor (TFT) substrate. The shorting bar structure comprises: a test wire; a test probe contact part connected to the test wire and configured to be able to contact with a test probe; and at least one PN junction structure located between the test wire and at least one wire under test, and configured to allow a test signal to be unidirectionally transmittable in a direction from the test wire to the wire under test.

Abstract: The present disclosure provides a lighting-on device and a method for cell test. The lighting-on device includes a movable unit including a first marker; an image acquisition unit configured to acquire an image indicating an actual relative positional relationship between the first marker and a second marker on a display panel; a calculation unit configured to calculate the actual relative positional relationship between the first marker and the second marker according to the image; a first position adjustment unit configured to drive the movable unit so as to adjust the actual relative positional relationship; and a first control unit configured to determine whether the adjusted actual relative positional relationship has been aligned by the first position adjustment unit according to the relative positional relationship between the first marker and the second marker.

Abstract: The present disclosure provides a shorting bar structure and a method for manufacturing the same, and a Thin Film Transistor (TFT) substrate. The shorting bar structure comprises: a test wire; a test probe contact part connected to the test wire and configured to be able to contact with a test probe; and at least one PN junction structure located between the test wire and at least one wire under test, and configured to allow a test signal to be unidirectionally transmittable in a direction from the test wire to the wire under test.

Abstract: A display panel including a first substrate, a first polarizer sheet arranged on the first substrate, a second substrate, a second polarizer sheet arranged on the second substrate, a liquid crystal layer located between the first substrate and the second substrate, and further comprises a pixel electrode, a common electrode, a first alignment layer and a gate line formed on the first substrate, at least one of the pixel electrode and the common electrode is a comb-like electrode, a transmission axis of the first polarizer sheet is parallel with the line along which an alignment direction of the first alignment layer is located, and the transmission axis of the first polarizer sheet is perpendicular to a transmission axis of the second polarizer sheet, and the line along which the alignment direction of the first alignment layer is located is at a predetermined angle greater than 0° and less than 90° with the respect to the gate line.

Abstract: A display panel including a first substrate, a first polarizer sheet arranged on the first substrate, a second substrate, a second polarizer sheet arranged on the second substrate, a liquid crystal layer located between the first substrate and the second substrate, and further comprises a pixel electrode, a common electrode, a first alignment layer and a gate line formed on the first substrate, at least one of the pixel electrode and the common electrode is a comb-like electrode, a transmission axis of the first polarizer sheet is parallel with the line along which an alignment direction of the first alignment layer is located, and the transmission axis of the first polarizer sheet is perpendicular to a transmission axis of the second polarizer sheet, and the line along which the alignment direction of the first alignment layer is located is at a predetermined angle greater than 0° and less than 90° with the respect to the gate line.

Abstract: A light-condensing device and a method of fabricating the same are provided. The light-condensing device includes a central block, a pair of vertical diffraction grating blocks respectively located left and right of the central block, and a pair of horizontal diffraction grating blocks respectively located above and below the central block. The vertical diffraction grating blocks include parallel vertical diffraction gratings in the form of lines extending in the direction of a vertical axis, and the horizontal diffraction grating blocks include parallel horizontal diffraction gratings in the form of lines extending in the direction of a horizontal axis.

Abstract: A light-condensing device and a method of fabricating the same are provided. The light-condensing device includes a central block, a pair of vertical diffraction grating blocks respectively located left and right of the central block, and a pair of horizontal diffraction grating blocks respectively located above and below the central block. The vertical diffraction grating blocks include parallel vertical diffraction gratings in the form of lines extending in the direction of a vertical axis, and the horizontal diffraction grating blocks include parallel horizontal diffraction gratings in the form of lines extending in the direction of a horizontal axis.