Abstract: Provided herein is a semiconductor memory device and a method of manufacturing the same. The semiconductor memory device includes a channel layer, and a source select line surrounding at least a part of the channel layer. A p-type impurity is locally doped in the part of the channel layer or a gate insulating layer includes a first member interposed between the channel layer and the source select line and aligned with a data storage layer.

Abstract: A semiconductor memory device, and a method of manufacturing the same, includes a gate stack including an interlayer insulating layers and conductive patterns alternately stacked in a vertical direction on a substrate, a channel structure passing through the gate stack and having an upper end protruding above the gate stack, a memory layer surrounding a sidewall of the channel structure, and a source layer formed on the gate stack. The channel structure includes a core insulating layer extending in a central region of the channel structure in the vertical direction, and a channel layer surrounding a sidewall of the core insulating layer, the channel layer formed to be lower in the vertical direction than the core insulating layer and the memory layer.

Abstract: There are provided a semiconductor memory device and a method of manufacturing a semiconductor memory device. The semiconductor memory device includes a conductive pattern, an etch stop layer on the conductive pattern, a conductive bonding pattern including a contact portion connected to the conductive pattern, and a pad portion extending from the contact portion, a first dielectric layer disposed on the etch stop layer and spaced apart from the conductive bonding pattern, and a second dielectric layer including a first portion surrounding a sidewall of the contact portion of the conductive bonding pattern between the pad portion of the conductive bonding pattern and the etch stop layer, and a second portion extending from the first portion to cover an upper surface of the first dielectric layer.

Abstract: There are provided a semiconductor memory device and a method of manufacturing a semiconductor memory device. The semiconductor memory device includes a conductive pattern, an etch stop layer on the conductive pattern, a conductive bonding pattern including a contact portion connected to the conductive pattern, and a pad portion extending from the contact portion, a first dielectric layer disposed on the etch stop layer and spaced apart from the conductive bonding pattern, and a second dielectric layer including a first portion surrounding a sidewall of the contact portion of the conductive bonding pattern between the pad portion of the conductive bonding pattern and the etch stop layer, and a second portion extending from the first portion to cover an upper surface of the first dielectric layer.

Abstract: A semiconductor memory device, and a method of manufacturing the same, includes a gate stack including an interlayer insulating layers and conductive patterns alternately stacked in a vertical direction on a substrate, a channel structure passing through the gate stack and having an upper end protruding above the gate stack, a memory layer surrounding a sidewall of the channel structure, and a source layer formed on the gate stack. The channel structure includes a core insulating layer extending in a central region of the channel structure in the vertical direction, and a channel layer surrounding a sidewall of the core insulating layer, the channel layer formed to be lower in the vertical direction than the core insulating layer and the memory layer.

Abstract: An organic light emitting display device includes a first display area having a plurality of sub-pixel areas therein and a second display area having a plurality of sub-pixel areas and a plurality of transmissive areas therein. The organic light emitting display device includes a plastic substrate including a first portion corresponding to the first display area and a second portion corresponding to the second display area; a plurality of thin film transistors on the plastic substrate to correspond to the plurality of sub-pixel areas; and a plurality of organic light emitting elements on the plurality of thin film transistors to correspond to the plurality of sub-pixel areas, wherein the second portion includes polyimide and a ligand compound, and the first portion includes polyimide with the ligand compound absent therein.

Abstract: There are provided a semiconductor memory device and a method of manufacturing a semiconductor memory device. The semiconductor memory device includes a conductive pattern, an etch stop layer on the conductive pattern, a conductive bonding pattern including a contact portion connected to the conductive pattern, and a pad portion extending from the contact portion, a first dielectric layer disposed on the etch stop layer and spaced apart from the conductive bonding pattern, and a second dielectric layer including a first portion surrounding a sidewall of the contact portion of the conductive bonding pattern between the pad portion of the conductive bonding pattern and the etch stop layer, and a second portion extending from the first portion to cover an upper surface of the first dielectric layer.

Abstract: Disclosed is a display device comprising: a substrate comprising an active region and a non-active region; a light emitting device that emits light in the active area of the substrate; a touch sensor in the active area of the substrate that senses touch of the display device, the touch sensor including a plurality of conductive layers arranged in a stacking sequence; and a plurality of routing lines in the non-active region of the substrate that are connected to the touch sensor, each of the plurality of routing lines including a plurality of routing layers, each of the plurality of routing layers made of a same material as a corresponding one of the plurality of conductive layers included in the touch sensor, and the plurality of routing layers arranged in a same stacking sequence as the stacking sequence of the plurality of conductive layers of the touch sensor.

Abstract: Provided herein is a semiconductor memory device and a method of manufacturing the semiconductor memory device. The semiconductor memory device includes a first gate stacked body including a plurality of interlayer insulating layers and a plurality of conductive patterns that are alternately stacked in a vertical direction, a second gate stacked body including a source select line and an insulating pattern that are sequentially formed on the first gate stacked body, and a channel structure extending into the first gate stacked body and the second gate stacked body in a vertical direction, and including a first end upwardly protruding higher than the second gate stacked body, wherein the source select line includes a plurality of conductive layers that are sequentially stacked.

Abstract: A semiconductor device includes a gate structure including drain select lines and word lines, source patterns, and source select lines located between the gate structure and the source patterns. The semiconductor device also includes a first isolation structure extending between the source patterns and between the source select lines, a second isolation structure extending between the drain select lines, and channel structures extending into the source patterns through the gate structure and the source select lines.

Abstract: Discussed is a display device including a substrate including a first region and a second region surrounding the first region, a plurality of first subpixels on the first region of the substrate, and a plurality of second subpixels on the second region of the substrate. The first region includes a transmission portion adjacent to the plurality of first subpixels. Each of the first and second subpixels includes a first electrode, a first common layer, an organic emission layer, a second common layer, and a second electrode stacked in order. The first and second common layers are located in succession in the first and second subpixels.

Abstract: An electronic device can include a plurality of pad electrodes provided at at least one side of a substrate, at least one circuit film configured to have a plurality of connection electrodes provided at an insulating film to correspond to the plurality of pad electrodes, a plurality of solders to conductively connect the plurality of connection electrodes to the plurality of pad electrodes exposed from the circuit film one-to-one, and an insulating adhesive to fill spaces between the plurality of pad electrodes and the plurality of connection electrodes. Also, each of the plurality of solders has an edge horizontally protruding from the insulating film.

Abstract: Disclosed is a display device comprising: a substrate comprising an active region and a non-active region; a light emitting device that emits light in the active area of the substrate; a touch sensor in the active area of the substrate that senses touch of the display device, the touch sensor including a plurality of conductive layers arranged in a stacking sequence; and a plurality of routing lines in the non-active region of the substrate that are connected to the touch sensor, each of the plurality of routing lines including a plurality of routing layers, each of the plurality of routing layers made of a same material as a corresponding one of the plurality of conductive layers included in the touch sensor, and the plurality of routing layers arranged in a same stacking sequence as the stacking sequence of the plurality of conductive layers of the touch sensor.

Abstract: A method of manufacturing a memory device includes forming a preliminary gate stack structure including interlayer insulating layers and sacrificial patterns stacked on a substrate, a channel hole passing through the preliminary gate stack structure, a memory layer extending along a surface of the channel hole, and a channel layer extending along a surface of the memory layer. The method also includes forming a gate stack structure by replacing the plurality of sacrificial patterns with a plurality of conductive patterns, removing the substrate, removing a portion of the memory layer to expose a portion of the channel layer, forming an upper insulating layer to cover a portion of an exposed channel layer and the gate stack structure, removing a portion of the upper insulating layer to expose the portion of the channel layer, and forming a source layer covering the portion of the exposed channel layer.

Abstract: Disclosed is an organic light emitting display device with a touch sensor. The display device has a touch sensor that is directly disposed on a sealing part, thus removing the necessity of an additional adhesion process, simplifying a manufacturing process and reducing manufacture cost. In addition, the display device with the touch sensor includes a display cover electrode of a display pad that is made of a same material as a conductive layer included in the touch sensor, thus preventing damage to the display pad electrode.

Abstract: An electronic device which connects a circuit film to a display panel by applying a conductive material to the insides of holes formed in the circuit film, so as to improve reliability of bonding, and a display device using the same, are discussed.

Abstract: A touch display device exhibiting low reflectivity is disclosed. The touch display device includes a light-blocking stack composed of at least two light-blocking color layers overlapping a plurality of touch electrodes disposed on an encapsulation unit, and a low-reflection layer disposed on the light-blocking stack, thereby absorbing external light without a separate polarizing plate, thus exhibiting low reflectivity.

Abstract: A semiconductor device includes gate structures including conductive layers extending in a first direction; channel structures located in the gate structures and protruding from surfaces of the gate structures; a slit structure located between the gate structures and including a protrusion that protrudes from the surfaces of the gate structures; and a compressive stressor connected to the protrusion of the slit structure and extending in the first direction.

Abstract: Disclosed is an organic light emitting display device with a touch sensor. The display device has a touch sensor that is directly disposed on a sealing part, thus removing the necessity of an additional adhesion process, simplifying a manufacturing process and reducing manufacture cost. In addition, the display device with the touch sensor includes a display cover electrode of a display pad that is made of a same material as a conductive layer included in the touch sensor, thus preventing damage to the display pad electrode.

Abstract: Disclosed is an organic light emitting display device with a touch sensor. The display device has a touch sensor that is directly disposed on a sealing part, thus removing the necessity of an additional adhesion process, simplifying a manufacturing process and reducing manufacture cost. In addition, the display device with the touch sensor includes a display cover electrode of a display pad that is made of a same material as a conductive layer included in the touch sensor, thus preventing damage to the display pad electrode.