Abstract: Novel oxoimidazolidine derivative compounds, a method of synthesizing said compounds, a pharmaceutical composition comprising said compounds and a suitable carrier, and a method of using the compounds. The oxoimidazolidine derivative compounds are useful as anti-tubercular agents.

Abstract: Compositions and methods for treating a range of Central Nervous System (CNS) disorders and diseases such as amyloidosis, protein folding diseases, tauopathy, and specifically Alzheimer’s Disease and Parkinson’s Disease, among others, in humans and in veterinary animals, by administering to a subject in need thereof a formulation comprising of melatonin, curcumin, and cannabis, specifically THC alone or with CBD.

Abstract: Under certain conditions, a fermion in a superconductor can separate in space into two parts known as Majorana zero modes, which are immune to decoherence from local noise sources and are attractive building blocks for quantum computers. Here we disclose a metal-based heterostructure platform to produce these Majorana zero modes which utilizes the surface states of certain metals in combination with a ferromagnetic insulator and a superconductor. This platform has the advantage of having a robust energy scale and the possibility of realizing complex circuit designs using lithographic methods. The Majorana zero modes are interrogated using planar tunnel junctions and electrostatic gates to selectively tunnel into designated pairs of Majorana zero modes. We give example of qubit designs and circuits that are particularly suitable for the metal-based heterostructures.

Abstract: Compositions and methods for treating a range of Central Nervous System (CNS) disorders and diseases such as amyloidosis, protein folding diseases, tauopathy, and specifically Alzheimer's Disease and Parkinson's Disease, among others, in humans and in veterinary animals, by administering to a subject in need thereof a formulation comprising of melatonin, curcumin and cannabis, specifically THC alone or with CBD.

Abstract: Under certain conditions, a fermion in a superconductor can separate in space into two parts known as Majorana zero modes, which are immune to decoherence from local noise sources and are attractive building blocks for quantum computers. Here we disclose a metal-based heterostructure platform to produce these Majorana zero modes which utilizes the surface states of certain metals in combination with a ferromagnetic insulator and a superconductor. This platform has the advantage of having a robust energy scale and the possibility of realizing complex circuit designs using lithographic methods. The Majorana zero modes are interrogated using planar tunnel junctions and electrostatic gates to selectively tunnel into designated pairs of Majorana zero modes. We give example of qubit designs and circuits that are particularly suitable for the metal-based heterostructures.

Abstract: A switchable Josephson junction is provided that includes a plurality of ferromagnetic insulators that are defined by their respective magnetic alignments. A first superconducting layer that is positioned between any two of the ferromagnetic insulators, wherein the conductive state is controlled by the relative magnetization orientation of the ferromagnetic insulators where the first superconducting layer is superconducting when the two magnetizations are aligned in antiparallel but it turns normally conducting when the magnetic alignment is parallel. A second superconducting layer is adjacent one of the ferromagnetic layers, wherein Josephson tunneling occurs between the first superconducting layer and second superconducting layer across one of the ferromagnetic layers.

Abstract: A switchable Josephson junction is provided that includes a plurality of ferromagnetic insulators that are defined by their respective magnetic alignments. A first superconducting layer that is positioned between any two of the ferromagnetic insulators, wherein the conductive state is controlled by the relative magnetization orientation of the ferromagnetic insulators where the first superconducting layer is superconducting when the two magnetizations are aligned in antiparallel but it turns normally conducting when the magnetic alignment is parallel. A second superconducting layer is adjacent one of the ferromagnetic layers, wherein Josephson tunneling occurs between the first superconducting layer and second superconducting layer across one of the ferromagnetic layers.

Abstract: A memory element is provided that includes a ferromagnetic (FM) layer having one or more ferromagnetic materials. One or more first molecule layers are positioned on the FM layer where charge transfer and interface chemistry between the one or more first molecule layers and FM layer induces a magnetic moment in the one or more first molecule layers. The magnetic moment is stored in the one or more first molecule layers acting as bit information that is retained or written into the one or more first molecule layers. One or more spin-filter layers are positioned on the one or more first molecule layers. The one or more spin-filter layers are positioned on the one or more spin-filter layers to form a physical or a chemical ?-dimer layer structure.

Abstract: A magnetic memory cell is provided that includes a free layer that is pinned on both of its sides to form one or more domain wall structures. The one or more domain wall structures define one or more logic states by controlling the motion of the one or more domain wall structures.

Abstract: An approach for monitoring energy consumption and detecting preventive maintenance issues in a system having control loops and associated devices. Settling time and error value in a control loop may be indicative of the loop's efficiency. Error value may be a difference between a measurement of a parameter and a setpoint for the parameter. Degradation of a loop's efficiency may be an indication of increased energy consumption by the system. Such degradation may also be indicative of a future defect in a control loop or devices associated with the control loop. Thus, the present approach may provide for energy monitoring and preventive maintenance of the system.

Abstract: A memory element is provided that includes a ferromagnetic (FM) layer having one or more ferromagnetic materials. One or more first molecule layers are positioned on the FM layer where charge transfer and interface chemistry between the one or more first molecule layers and FM layer induces a magnetic moment in the one or more first molecule layers. The magnetic moment is stored in the one or more first molecule layers acting as bit information that is retained or written into the one or more first molecule layers. One or more spin-filter layers are positioned on the one or more first molecule layers. The one or more spin-filter layers are positioned on the one or more spin-filter layers to form a physical or a chemical ?-dimer layer structure.

Abstract: An approach for monitoring energy consumption and detecting preventive maintenance issues in a system having control loops and associated devices. Settling time and error value in a control loop may be indicative of the loop's efficiency. Error value may be a difference between a measurement of a parameter and a setpoint for the parameter. Degradation of a loop's efficiency may be an indication of increased energy consumption by the system. Such degradation may also be indicative of a future defect in a control loop or devices associated with the control loop. Thus, the present approach may provide for energy monitoring and preventive maintenance of the system.

Abstract: A Josephson junction (JJ) device includes a buffered substrate comprising a first buffer layer formed on a substrate. A second buffer layer is formed on the first buffer layer. The second buffer layer includes a hexagonal compound structure. A trilayer structure is formed on the buffered substrate comprising at least two layers of a superconducting material. A thin tunnel barrier layer is positioned between the at least two layers. The buffered substrate is used to minimize lattice mismatch and interdiffusion in the trilayer structure so as to allow the JJ device to operate above 20 K.

Abstract: A Josephson junction (JJ) device includes a buffered substrate comprising a first buffer layer formed on a substrate. A second buffer layer is formed on the first buffer layer. The second buffer layer includes a hexagonal compound structure. A trilayer structure is formed on the buffered substrate comprising at least two layers of a superconducting material. A thin tunnel barrier layer is positioned between the at least two layers. The buffered substrate is used to minimize lattice mismatch and interdiffusion in the trilayer structure so as to allow the JJ device to operate above 20 K.

Abstract: A spin filter transistor having a semiconductor structure. A spin injector including a first spin filter tunnel barrier is positioned on the semiconductor structure. A spin detector including a second spin filter tunnel barrier is positioned on the semiconductor. Highly polarized spins injected from the spin injector are transported through the semiconductor structure, and are detected at the spin detector. The magnitude of the spin current depends on the relative magnetic alignment of the first spin filter tunnel barrier and the second spin filter tunnel barrier.

Abstract: The organic spin transport device, such as a magnetic tunnel junction or a transistor, includes at least two ferromagnetic material electrodes. At least one organic semiconductor structure is formed between the at least two ferromagnetic material electrodes. At least one buffer layer is positioned between the at least one organic semiconductor structure and the at least two ferromagnetic material electrodes. The at least one buffer layer reduces spin scattering between the at least two ferromagnetic material electrodes and the at least one organic semiconductor structure. The device exhibits a magnetoresistive effect that depends on the relative magnetization of the two ferromagnetic material electrodes.

Abstract: Ferromagnetic-insulator-ferromagnetic trilayer junctions show magnetoresistance (JMR) effects ranging from about 16% to several hundred percent at room temperature. Larger effects are observed when the actual tunneling resistance (R.sub.T) is comparable to electrode film resistance (R.sub.L) over the junction area in cross-geometry junction measurements. The geometrically enhanced large JMR can be qualitatively explained by the nonuniform current flow over the function area when R.sub.T is comparable to R.sub.L, in the cross-geometry junction structure. For a fixed junction area, the effective junction resistance (R.sub.J) can be varied from less than 1 ohm to several kilohms by controlling the thickness of the insulating layer or by appropriately selecting ferromagnetic films. The trilayer tunnel junctions of the present invention are nonvolatile, stable and are reproducible.

Abstract: Ferromagnetic/insulator/ferromagnetic tunneling has been shown to give over 10% change in the junction resistance with H less than 100 Oe, at room temperature but decreases at high dc-bias across the junction. Using such junctions as magnetic sensors or memory elements would have several advantages; it is a trilayer device and does not strongly depend on the thickness of FM electrodes or the tunnel barrier; submicron size is possible with high junction resistance and low power dissipation. The magnitude of the effect is consistent with the simple model of spin-polarized tunneling between ferromagnets.