Patents by Inventor Jagir Multani

Jagir Multani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Etchback process for tungsten contact/via filling
    Patent number: 5167760
    Abstract: An etchback process for etching a refractory metal layer formed on a semiconductor substrate with a greatly reduced micro-loading effect. The etch proceeds in three steps. The first step is a uniform etch which utilizes a gas chemistry of SF.sub.6, O.sub.2 and He and proceeds for a predetermined time to remove most of the metal layer. The second step is a very uniform etch which utilizes a gas chemistry of SF.sub.6, Cl.sub.2 and He and proceeds until the endpoint is detected. The endpoint is detected by measurement and integration of the 772 nm and 775 nm lines of Cl. The third step is a timed etch utilizing a gas chemistry of Cl.sub.2 and He which is used as both an overetch to ensure complete removal of the refractory metal film and as a selective etchant to remove an adhesion underlayer.
    Type: Grant
    Filed: June 5, 1991
    Date of Patent: December 1, 1992
    Assignee: Intel Corporation
    Inventors: Xiao-Chun Mu, Jagir Multani
  • Novel etch back process for tungsten contact/via filling
    Patent number: 5035768
    Abstract: An etchback process for etching a refractory metal layer formed on a semiconductor substrate with a greatly reduced micro-loading effect. The etch proceeds in three steps. The first step is a uniform etch which utilizes a gas chemistry of SF.sub.6, O.sub.2 and He and proceeds for a predetermined time to remove most of the metal layer. The second step is a very uniform etch which utilizes a gas chemistry of SF.sub.6, Cl.sub.2 and He and proceeds until the endpoint is detected. The endpoint is detected by measurement and integration of the 772 nm and 775 nm lines of Cl. The third step is a timed etch utilizing a gas chemistry of Cl.sub.2 and He which is used as both an overetch to ensure complete removal of the refractory metal film and as a selective etchant to remove an adhesion underlayer.
    Type: Grant
    Filed: July 30, 1990
    Date of Patent: July 30, 1991
    Assignee: Intel Corporation
    Inventors: Xiao-Chun Mu, Jagir Multani
  • Plasma etching process for refractory metal vias
    Patent number: 4980018
    Abstract: An etchback process for etching a refractory metal layer formed on a semiconductor substrate with a greatly reduced micro-loading effect. The etch proceeds in three steps. The first step is a uniform etch which utilizes a gas chemistry of SF.sub.6, O.sub.2 and He and proceeds for a predetermined time to remove most of the metal layer. The second step is a very uniform etch which utilizes a gas chemistry of SF.sub.6, Cl.sub.2 and He and proceeds until the endpoint is detected. The endpoint is detected by measurement and integration of the 772 nm and 775 nm lines of Cl. The third step is a timed etch utilizing a gas chemistry of Cl.sub.2 and He which is used as both an overetch to ensure complete removal of the refractory metal film and as a selective etchant to remove an adhesion underlayer.
    Type: Grant
    Filed: November 14, 1989
    Date of Patent: December 25, 1990
    Assignee: Intel Corporation
    Inventors: Xiao-Chun Mu, Jagir Multani