Abstract: Semiconductor materials are cleaned after silica polishing by treatment with an aqueous phosphoric acid containing solution followed by rinsing in water. The treatment dissolves the silica sols so that they are removed from the semiconductor surface.

Abstract: An improved process for preparing a polishing solution for use in the chemical-mechanical polishing of silicon comprising copper nitrate, ammonium fluoride, nitric acid and ammonium nitrate. The latter two components are added to the copper nitrate, the system mixed well and then the ammonium fluoride added. The process eliminates the need for settling, decantation or filtration during solution preparation and permits substantially lowered amounts of copper nitrate to be used for silicon polishing. The silicon polishing solution is also described.