Patents by Inventor Jahyong Kuh

Jahyong Kuh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High lateral to vertical ratio etch process for device manufacturing
    Patent number: 11031233
    Abstract: A layer stack over a substrate is etched using a photoresist pattern deposited on the layer stack as a first mask. The photoresist pattern is in-situ cured using plasma. At least a portion of the photoresist pattern can be modified by curing. In one embodiment, silicon by-products are formed on the photoresist pattern from the plasma. In another embodiment, a carbon from the plasma is embedded into the photoresist pattern. In yet another embodiment, the plasma produces an ultraviolet light to cure the photoresist pattern. The cured photoresist pattern is slimmed. The layer stack is etched using the slimmed photoresist pattern as a second mask.
    Type: Grant
    Filed: September 19, 2019
    Date of Patent: June 8, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Kyeong Tae Lee, Sang Wook Kim, Daehee Weon, Sang-jun Choi, Sreekar Bhaviripudi, Jahyong Kuh
  • HIGH LATERAL TO VERTICAL RATIO ETCH PROCESS FOR DEVICE MANUFACTURING
    Publication number: 20200013610
    Abstract: A layer stack over a substrate is etched using a photoresist pattern deposited on the layer stack as a first mask. The photoresist pattern is in-situ cured using plasma. At least a portion of the photoresist pattern can be modified by curing. In one embodiment, silicon by-products are formed on the photoresist pattern from the plasma. In another embodiment, a carbon from the plasma is embedded into the photoresist pattern. In yet another embodiment, the plasma produces an ultraviolet light to cure the photoresist pattern. The cured photoresist pattern is slimmed. The layer stack is etched using the slimmed photoresist pattern as a second mask.
    Type: Application
    Filed: September 19, 2019
    Publication date: January 9, 2020
    Inventors: Kyeong Tae Lee, Sang Wook Kim, Daehee Weon, Sang-jun Choi, Sreekar Bhaviripudi, Jahyong Kuh
  • High lateral to vertical ratio etch process for device manufacturing
    Patent number: 10460921
    Abstract: A layer stack over a substrate is etched using a photoresist pattern deposited on the layer stack as a first mask. The photoresist pattern is in-situ cured using plasma. At least a portion of the photoresist pattern can be modified by curing. In one embodiment, silicon by-products are formed on the photoresist pattern from the plasma. In another embodiment, a carbon from the plasma is embedded into the photoresist pattern. In yet another embodiment, the plasma produces an ultraviolet light to cure the photoresist pattern. The cured photoresist pattern is slimmed. The layer stack is etched using the slimmed photoresist pattern as a second mask.
    Type: Grant
    Filed: August 6, 2013
    Date of Patent: October 29, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Kyeong Tae Lee, Sang Wook Kim, Daehee Weon, Sang-jun Choi, Sreekar Bhaviripudi, Jahyong Kuh
  • HIGH LATERAL TO VERTICAL RATIO ETCH PROCESS FOR DEVICE MANUFACTURING
    Publication number: 20130319614
    Abstract: A layer stack over a substrate is etched using a photoresist pattern deposited on the layer stack as a first mask. The photoresist pattern is in-situ cured using plasma. At least a portion of the photoresist pattern can be modified by curing. In one embodiment, silicon by-products are formed on the photoresist pattern from the plasma. In another embodiment, a carbon from the plasma is embedded into the photoresist pattern. In yet another embodiment, the plasma produces an ultraviolet light to cure the photoresist pattern. The cured photoresist pattern is slimmed. The layer stack is etched using the slimmed photoresist pattern as a second mask.
    Type: Application
    Filed: August 6, 2013
    Publication date: December 5, 2013
    Applicant: Applied Materials, Inc.
    Inventors: Kyeong Tae Lee, Sang Wook Kim, Daehee Weon, Sang-jun Choi, Sreekar Bhaviripudi, Jahyong Kuh
  • High lateral to vertical ratio etch process for device manufacturing
    Patent number: 8529776
    Abstract: A layer stack over a substrate is etched using a photoresist pattern deposited on the layer stack as a first mask. The photoresist pattern is in-situ cured using plasma. At least a portion of the photoresist pattern can be modified by curing. In one embodiment, silicon by-products are formed on the photoresist pattern from the plasma. In another embodiment, a carbon from the plasma is embedded into the photoresist pattern. In yet another embodiment, the plasma produces an ultraviolet light to cure the photoresist pattern. The cured photoresist pattern is slimmed. The layer stack is etched using the slimmed photoresist pattern as a second mask.
    Type: Grant
    Filed: July 25, 2011
    Date of Patent: September 10, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Kyeong Tae Lee, Sang Wook Kim, Daehee Weon, Sang-jun Choi, Sreekar Bhaviripudi, Jahyong Kuh
  • HIGH LATERAL TO VERTICAL RATIO ETCH PROCESS FOR DEVICE MANUFACTURING
    Publication number: 20130029490
    Abstract: A layer stack over a substrate is etched using a photoresist pattern deposited on the layer stack as a first mask. The photoresist pattern is in-situ cured using plasma. At least a portion of the photoresist pattern can be modified by curing. In one embodiment, silicon by-products are formed on the photoresist pattern from the plasma. In another embodiment, a carbon from the plasma is embedded into the photoresist pattern. In yet another embodiment, the plasma produces an ultraviolet light to cure the photoresist pattern. The cured photoresist pattern is slimmed. The layer stack is etched using the slimmed photoresist pattern as a second mask.
    Type: Application
    Filed: July 25, 2011
    Publication date: January 31, 2013
    Inventors: Kyeong Tae Lee, Sang Wook Kim, Daehee Weon, Sang-jun Choi, Sreekar Bhaviripudi, Jahyong Kuh