Abstract: A nonvolatile memory device includes a memory cell array and a peripheral circuit. The peripheral circuit is connected to the memory cell array through conductive lines and includes transistors. Each of the transistors is formed on the substrate and includes first and second regions and a gate electrode. In at least one of the transistors, the first region is connected to at least one of the conductive lines through first contact plugs extending in the direction perpendicular to the substrate, and second contact plugs extending in the direction perpendicular to the substrate. A contact area of each of the first contact plugs is different from a contact area of each of the second contact plugs.

Abstract: A nonvolatile memory device includes a memory cell array and a peripheral circuit. The peripheral circuit is connected to the memory cell array through conductive lines and includes transistors. Each of the transistors is formed on the substrate and includes first and second regions and a gate electrode. In at least one of the transistors, the first region is connected to at least one of the conductive lines through first contact plugs extending in the direction perpendicular to the substrate, and second contact plugs extending in the direction perpendicular to the substrate. A contact area of each of the first contact plugs is different from a contact area of each of the second contact plugs.

Abstract: A non-volatile memory device and a bad block remapping method use some of main blocks as remapping blocks to replace a bad block in a main cell block and selects remapping blocks using existing block address signals. Thus, separate bussing of remapping block address signals is not needed. The bad block remapping includes comparing an external block address input from an external source to a stored bad block address, generating a bad block flag signal when the external block address is identical to the stored bad block address, generating a remapping block address selecting the remapping blocks in response to a remapping address corresponding to the bad block address, selecting one of the external block address and the remapping block address in response to the bad block flag signal to create a selected address, and outputting a row address signal in accordance with the selected address.

Abstract: A non-volatile memory device and a bad block remapping method use some of main blocks as remapping blocks to replace a bad block in a main cell block and selects remapping blocks using existing block address signals. Thus, separate bussing of remapping block address signals is not needed. The bad block remapping includes comparing an external block address input from an external source to a stored bad block address, generating a bad block flag signal when the external block address is identical to the stored bad block address, generating a remapping block address selecting the remapping blocks in response to a remapping address corresponding to the bad block address, selecting one of the external block address and the remapping block address in response to the bad block flag signal to create a selected address, and outputting a row address signal in accordance with the selected address.