Abstract: A polishing apparatus includes a chuck table, a rotation mechanism that rotates the chuck table around a predetermined rotation axis, a polishing unit that has a spindle and in which a polishing pad for polishing the wafer sucked and held by the holding surface is mounted on a lower end part of the spindle, a slurry supply unit, and a cleaning unit that cleans the holding surface. The cleaning unit has a cleaning abrasive stone for removing the slurry that adheres to the holding surface through getting contact with the holding surface and a positioning unit that positions the cleaning abrasive stone to a cleaning position at which the cleaning abrasive stone gets contact with the holding surface and an evacuation position at which the cleaning abrasive stone is separate from the holding surface. Hardness of the cleaning abrasive stone is lower than the hardness of the holding surface.

Abstract: A polishing apparatus includes a chuck table, a rotation mechanism that rotates the chuck table around a predetermined rotation axis, a polishing unit that has a spindle and in which a polishing pad for polishing the wafer sucked and held by the holding surface is mounted on a lower end part of the spindle, a slurry supply unit, and a cleaning unit that cleans the holding surface. The cleaning unit has a cleaning abrasive stone for removing the slurry that adheres to the holding surface through getting contact with the holding surface and a positioning unit that positions the cleaning abrasive stone to a cleaning position at which the cleaning abrasive stone gets contact with the holding surface and an evacuation position at which the cleaning abrasive stone is separate from the holding surface. Hardness of the cleaning abrasive stone is lower than the hardness of the holding surface.