Patents by Inventor Jai Verma

Jai Verma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Light emitting diodes using ultra-thin quantum heterostructures
    Patent number: 11043612
    Abstract: A DUV-LED including a bottom substrate, a n-contact/injection layer formed on the bottom substrate, a p-contact region, and an emitting active region between the n-contact/injection layer and the contact region. The emitting active region includes at least one GaN quantum heterostructure. The at least one GaN quantum heterostructures is sized and shaped to determine a certain emission wavelength. Preferably, the certain emission wavelength is in a range of approximately 219-280 nm. In one embodiment, the size is controlled by precisely controlling parameters selected from the group consisting of: an epitaxial deposition time; a Ga/N ratio; a thermal annealing time; a temperature during deposition; and combinations thereof.
    Type: Grant
    Filed: November 15, 2018
    Date of Patent: June 22, 2021
    Assignee: Cornell University
    Inventors: SM Islam, Vladimir Protasenko, Huili Grace Xing, Debdeep Jena, Jai Verma
  • LIGHT EMITTING DIODES USING ULTRA-THIN QUANTUM HETEROSTRUCTURES
    Publication number: 20190148584
    Abstract: A DUV-LED including a bottom substrate, a n-contact/injection layer formed on the bottom substrate, a p-contact region, and an emitting active region between the n-contact/injection layer and the contact region. The emitting active region includes at least one GaN quantum heterostructure. The at least one GaN quantum heterostructures is sized and shaped to determine a certain emission wavelength. Preferably, the certain emission wavelength is in a range of approximately 219-280 nm. In one embodiment, the size is controlled by precisely controlling parameters selected from the group consisting of: an epitaxial deposition time; a Ga/N ratio; a thermal annealing time; a temperature during deposition; and combinations thereof.
    Type: Application
    Filed: November 15, 2018
    Publication date: May 16, 2019
    Applicants: Cornell University, University of Notre Dame du Lac
    Inventors: SM Islam, Vladimir Protasenko, Huili Grace Xing, Debdeep Jena, Jai Verma