Abstract: A semiconductor light-emitting device includes a first conductive semiconductor layer on a substrate, a superlattice layer including a plurality of first quantum barrier layers and a plurality of first quantum well layers, the plurality of first quantum barrier layers and the plurality of first quantum well layers being alternately stacked on the first conductive semiconductor layer, an active layer on the superlattice layer, and a second conductive semiconductor layer on the active layer, wherein a Si doping concentration of at least one of the plurality of first quantum well layers is equal to or greater than 1.0×1016/cm3 and less than or equal to 1.0×1018/cm3. Thus, the semiconductor light-emitting device may have increased light output and reliability.

Abstract: A semiconductor light emitting device including a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, the active layer including at least one quantum well layer and at least one quantum barrier layer that are alternately stacked and form a multiple quantum well structure; at least one border layer in contact with the first conductivity-type semiconductor layer and interposed between the first conductivity-type semiconductor layer and the active layer, the at least one border layer having a band gap energy that decreases in a direction away from the first conductivity-type semiconductor layer; and at least one growth blocking layer interposed between the active layer and the border layer, the at least one growth blocking layer having a band gap energy equal to a band gap energy of the at least one quantum barrier layer.

Abstract: A semiconductor light emitting device including a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, the active layer including at least one quantum well layer and at least one quantum barrier layer that are alternately stacked and form a multiple quantum well structure; at least one border layer in contact with the first conductivity-type semiconductor layer and interposed between the first conductivity-type semiconductor layer and the active layer, the at least one border layer having a band gap energy that decreases in a direction away from the first conductivity-type semiconductor layer; and at least one growth blocking layer interposed between the active layer and the border layer, the at least one growth blocking layer having a band gap energy equal to a band gap energy of the at least one quantum barrier layer.

Abstract: A semiconductor light-emitting device includes a first conductive semiconductor layer on a substrate, a superlattice layer including a plurality of first quantum barrier layers and a plurality of first quantum well layers, the plurality of first quantum barrier layers and the plurality of first quantum well layers being alternately stacked on the first conductive semiconductor layer, an active layer on the superlattice layer, and a second conductive semiconductor layer on the active layer, wherein a Si doping concentration of at least one of the plurality of first quantum well layers is equal to or greater than 1.0×1016/cm3 and less than or equal to 1.0×1018/cm3. Thus, the semiconductor light-emitting device may have increased light output and reliability.

Abstract: A semiconductor light emitting device includes an n-type semiconductor layer, a border layer disposed on the n-type semiconductor layer, having band gap energy decreasing in a single direction, and represented by an empirical formula AlxInyGa1?x?yN (0?x?0.1, 0.01?y?0.1), an active layer disposed on the border layer and having a structure in which one or more InGaN layers and one or more GaN layers are alternately stacked, and a p-type semiconductor layer.

Abstract: A semiconductor light emitting device includes an n-type semiconductor layer, a border layer disposed on the n-type semiconductor layer, having band gap energy decreasing in a single direction, and represented by an empirical formula AlxInyGa1?x?yN (0?x?0.1, 0.01?y?0.1), an active layer disposed on the border layer and having a structure in which one or more InGaN layers and one or more GaN layers are alternately stacked, and a p-type semiconductor layer.