Abstract: Apparatus for recording data and method for making the same. In accordance with some embodiments, a recording layer is supported by a substrate. The recording layer has a granular magnetic recording layer with a first oxide content, a continuous magnetic recording layer with nominally no oxide content, and an oxide gradient layer disposed between the respective granular magnetic recording layer and the continuous magnetic recording layer. The oxide gradient layer has a second oxide content less than the first oxide content of the granular layer.

Abstract: A stack including a crystallographic orientation interlayer, a magnetic zero layer disposed on the interlayer, and a magnetic recording layer disposed on the magnetic zero layer is disclosed. The magnetic zero layer is non-magnetic or has a saturation magnetic flux density (Bs) less than about 100 emu/cc. The magnetic zero layer and the magnetic layer include grains surrounded by a non-magnetic segregant. The magnetic zero layer provides a coherent interface between the interlayer and the magnetic layer with a lattice mismatch less than about 4%.

Abstract: A magnetic data storage medium capable of storing data bits may be configured at least with a magnetic underlayer structure and a recording structure. The recording structure can have at least a first magnetic layer and a second magnetic layer with the first magnetic layer decoupled by being constructed of an alloy of cobalt, platinum, and a platinum group metal element.

Abstract: A stack including a crystallographic orientation interlayer, a magnetic zero layer disposed on the interlayer, and a magnetic recording layer disposed on the magnetic zero layer is disclosed. The magnetic zero layer is non-magnetic or has a saturation magnetic flux density (Bs) less than about 100 emu/cc. The magnetic zero layer and the magnetic layer include grains surrounded by a non-magnetic segregant. The magnetic zero layer provides a coherent interface between the interlayer and the magnetic layer with a lattice mismatch less than about 4%.

Abstract: A stack including a crystallographic orientation interlayer, a magnetic zero layer disposed on the interlayer, and a magnetic recording layer disposed on the magnetic zero layer is disclosed. The magnetic zero layer is non-magnetic or has a saturation magnetic flux density (Bs) less than about 100 emu/cc. The magnetic zero layer and the magnetic layer include grains surrounded by a non-magnetic segregant. The magnetic zero layer provides a coherent interface between the interlayer and the magnetic layer with a lattice mismatch less than about 4%.

Abstract: A magnetic data storage medium capable of storing data bits may be configured at least with a magnetic underlayer structure and a recording structure. The recording structure can have at least a first magnetic layer and a second magnetic layer with the first magnetic layer decoupled by being constructed of an alloy of cobalt, platinum, and a platinum group metal element.

Abstract: Apparatus for recording data and method for making the same. In accordance with some embodiments, a recording layer is supported by a substrate. The recording layer has a granular magnetic recording layer with a first oxide content, a continuous magnetic recording layer with nominally no oxide content, and an oxide gradient layer disposed between the respective granular magnetic recording layer and the continuous magnetic recording layer. The oxide gradient layer has a second oxide content less than the first oxide content of the granular layer.

Abstract: A stack including a crystallographic orientation interlayer, a magnetic zero layer disposed on the interlayer, and a magnetic recording layer disposed on the magnetic zero layer is disclosed. The magnetic zero layer is non-magnetic or has a saturation magnetic flux density (Bs) less than about 100 emu/cc. The magnetic zero layer and the magnetic layer include grains surrounded by a non-magnetic segregant. The magnetic zero layer provides a coherent interface between the interlayer and the magnetic layer with a lattice mismatch less than about 4%.

Abstract: Metal alloy heatsink films for magnetic recording media are disclosed. The metal alloy heatsink films possess both high thermal conductivity and improved mechanical properties such as relatively high hardness. The metal alloy heatsink films also have controlled microstructures which are compatible with subsequently deposited crystalline magnetic recording layers. The films may comprise single phase CuZr or AgPd alloys having a selected crystal structure and orientation. The combination of high thermal conductivity, good mechanical properties and controlled microstructures makes the metal alloy heatsink films suitable for various applications including heat assisted magnetic recording systems.

Abstract: A perpendicular magnetic recording disk is provided. The perpendicular magnetic recording disk includes an underlayer between a substrate and a perpendicular magnetic recording layer for inducing perpendicular orientation of the perpendicular magnetic recording layer, the perpendicular magnetic recording layer having a thickness in the range where the ratio of perpendicular coercivity Hc to maximum perpendicular coercivity Ho decreases with reduced thickness of the perpendicular magnetic recording layer.

Abstract: Metal alloy heatsink films for magnetic recording media are disclosed. The metal alloy heatsink films possess both high thermal conductivity and improved mechanical properties such as relatively high hardness. The metal alloy heatsink films also have controlled microstructures which are compatible with subsequently deposited crystalline magnetic recording layers. The films may comprise single phase CuZr or AgPd alloys having a selected crystal structure and orientation. The combination of high thermal conductivity, good mechanical properties and controlled microstructures makes the metal alloy heatsink films suitable for various applications including heat assisted magnetic recording systems.

Abstract: A perpendicular magnetic recording disk is provided. The perpendicular magnetic recording disk includes an underlayer between a substrate and a perpendicular magnetic recording layer for inducing perpendicular orientation of the perpendicular magnetic recording layer, the perpendicular magnetic recording layer having a thickness in the range where the ratio of perpendicular coercivity Hc to maximum perpendicular coercivity Ho decreases with reduced thickness of the perpendicular magnetic recording layer.

Abstract: A perpendicular magnetic recording disk is provided. The perpendicular magnetic recording disk includes an underlayer between a substrate and a perpendicular magnetic recording layer for inducing perpendicular orientation of the perpendicular magnetic recording layer, the perpendicular magnetic recording layer having a thickness in the range where the ratio of perpendicular coercivity Hc to maximum perpendicular coercivity Ho decreases with reduced thickness of the perpendicular magnetic recording layer.

Abstract: The invention includes improving or enhancing exchange coupling within a thin film layer. The improvement or enhancement to the exchange coupling occurs between the grains that are deposited to form the thin film. The improvement or enhancement to the exchange coupling between the grains of the thin film results from annealing the thin film at an elevated temperature for a period of time. A thin film structure and/or a magnetic recording layer made in accordance with the invention are disclosed.

Abstract: A method of manufacturing a thin film of magnetic material, comprises sputtering magnetic material from a target to a substrate to form a thin film of the magnetic material on the substrate, wherein the ratio of sputtering power in Watt to sputtering pressure in mTorr is greater than one. Thin films of magnetic material made according to the method and magnetic storage media including a thin film of magnetic material made according to the method are also included.

Abstract: A method of fabricating anisotropic magnetic films includes providing a substrate, sputtering a layer of NixFey (where x ranges from 40 to 50 and y=(100-x)) onto a surface of the substrate, and subjecting the layer of NixFey to a rotating magnetic field during the sputtering deposition process. A magnetic storage medium comprising a substrate, a soft magnetic underlayer supported by the substrate, the soft magnetic underlayer including NixFey (where x ranges from 40 to 50 and y=(100-x)) and having an easy axis in a circumferential direction and a hard axis in a radial direction, and a magnetically hard recording layer supported by the soft magnetic underlayer, is also included.

Abstract: A method of manufacturing a thin film of magnetic material, comprises sputtering magnetic material from a target to a substrate to form a thin film of the magnetic material on the substrate, wherein the ratio of sputtering power in Watt to sputtering pressure in mTorr is greater than one. Thin films of magnetic material made according to the method and magnetic storage media including a thin film of magnetic material made according to the method are also included.

Abstract: An amorphous alloy of light rare earth-transition metal and semi-metal, having a perpendicular magnetic anisotropy without decrease of magnetic moment of light rare earth metal in a short wavelength region, a magneto-optical recording layer made of the amorphous alloy, and a magneto-optical disk adopting the magneto-optical recording layer are provided. According to the magneto-optical recording layer, the semi-metal is added to the amorphous alloy of the light rare earth-transition metal to induce p-d electron orbit coupling between the transition metal and the added semi-metal of the amorphous alloy, thereby decreasing the demagnetizing energy of the amorphous alloy according to the decrease of a magnetic moment of the transition metal, without any effect on the magnetic moment of the light rare earth metal.

Abstract: A method of making amorphous light rare-earth transition metal (LRE-TM)-metalloid alloys having perpendicular magneto anisotropy energy, is provided. In this method of making amorphous LRE-TM-metalloid alloys by depositing a metalloid on an LRE-TM by sputtering, the sign of a saturation magnetostriction constant of the alloy is made opposite to the sign of a stress by applying a different Ar sputtering pressure according to the sign of the saturation magnetostriction constant, in order to increase the effective perpendicular magneto anisotropy energy K.sub.Ueff containing the components of magneto elastic energy expressed by an expression ##EQU1## (here, .lambda..sub.s is the saturation magnetostriction constant, and .sigma. is the stress).