Abstract: Batch-type deposition apparatus having a gland portion are provided. The apparatus include a reaction furnace, a gas nozzle located in the reaction furnace, a gas supply conduit located outside the reaction furnace and a gland portion for connecting the gas nozzle to the gas supply conduit. The gland portion includes a gas nozzle end extended from the gas nozzle toward an outside region of the reaction furnace and a gas supply conduit end extended from the gas supply conduit. The gas nozzle end is connected to the gas supply conduit end through a buffer member. The buffer member has an inclined inner wall for connecting an inner wall of the gas nozzle end to that of the gas supply conduit end.

Abstract: An apparatus and method for removing silicate from a phosphoric acid solution, including a treating unit, a regeneration line coupled to the treating unit, an additive solution supply member in communication with the regeneration line to decrease the temperature of the phosphoric acid solution and the concentration of the phosphoric acid therein, a filter in communication with the regeneration line to remove precipitated silicate particles, and a heating member having a heater and a vaporizing chamber to remove the additive.

Abstract: In an embodiment, a cleaning apparatus and method can prevent adsorption of nano-size particles by wafers. The apparatus includes a cleaning chamber for filling with a cleaning solution for cleaning an object and a drying chamber disposed over the cleaning chamber for drying the object by supplying drying fluid from an upper part. It also includes a transferring unit for transferring the object by moving it between the cleaning and drying chambers. Further, it includes a moveable exhaust plate disposed between the drying chamber and the cleaning chamber for dividing the two chambers and for exhausting the drying fluid supplied to the drying chamber. The drying fluid flows in a uniform laminar flow in the drying chamber.

Abstract: An apparatus for inspecting a wafer includes a handling unit for supporting, rotating and moving the wafer in horizontal and vertical directions, a first image acquisition unit for acquiring a first image corresponding to an upper surface of the wafer supported by the handling unit, a second image acquisition unit for acquiring a second image, a third image and a fourth image corresponding to a peripheral portion of the upper surface, a side surface and a lower surface of the wafer supported by the handling unit, respectively, a first driving unit for rotating the second image acquisition unit about a peripheral portion of the wafer supported by the handling unit in order to acquiring the second, third and fourth images, and an image processing unit for inspecting defects of the wafer supported by the handling unit from the first to fourth images.

Abstract: Batch-type deposition apparatus having a gland portion are provided. The apparatus include a reaction furnace, a gas nozzle located in the reaction furnace, a gas supply conduit located outside the reaction furnace and a gland portion for connecting the gas nozzle to the gas supply conduit. The gland portion includes a gas nozzle end extended from the gas nozzle toward an outside region of the reaction furnace and a gas supply conduit end extended from the gas supply conduit. The gas nozzle end is connected to the gas supply conduit end through a buffer member. The buffer member has an inclined inner wall for connecting an inner wall of the gas nozzle end to that of the gas supply conduit end.

Abstract: A microscope for inspecting a semiconductor wafer includes an optical unit including objective lenses and oculars for observing the semiconductor wafer; a display unit for magnifying and displaying an image of the semiconductor wafer observed by the optical unit; a sample piece stage holding the semiconductor wafer; a stage moving unit for moving the semiconductor wafer in an x-axis direction, a y-axis direction or a z-axis direction; a stage rotation unit for rotating the semiconductor wafer in a horizontal direction; a stage tilting unit for tilting the semiconductor wafer; and a controller for controlling operation of the microscope.

Abstract: An apparatus for inspecting a wafer includes a handling unit for supporting, rotating and moving the wafer in horizontal and vertical directions, a first image acquisition unit for acquiring a first image corresponding to an upper surface of the wafer supported by the handling unit, a second image acquisition unit for acquiring a second image, a third image and a fourth image corresponding to a peripheral portion of the upper surface, a side surface and a lower surface of the wafer supported by the handling unit, respectively, a first driving unit for rotating the second image acquisition unit about a peripheral portion of the wafer supported by the handling unit in order to acquiring the second, third and fourth images, and an image processing unit for inspecting defects of the wafer supported by the handling unit from the first to fourth images.

Abstract: A microscope for inspecting a semiconductor wafer includes an optical unit including objective lenses and oculars for observing the semiconductor wafer; a display unit for magnifying and displaying an image of the semiconductor wafer observed by the optical unit; a sample piece stage holding the semiconductor wafer; a stage moving unit for moving the semiconductor wafer in an x-axis direction, a y-axis direction or a z-axis direction; a stage rotation unit for rotating the semiconductor wafer in a horizontal direction; a stage tilting unit for tilting the semiconductor wafer; and a controller for controlling operation of the microscope.