Abstract: Various embodiments may relate to a resonator. The resonator may include a support including a substrate portion, and a membrane portion extending from the substrate portion over a cavity. The resonator may also include a piezoelectric layer on the membrane portion. The resonator may further include an electrode on the piezoelectric layer. The substrate portion may include dopants of a first conductivity type. The membrane portion may include dopants of a second conductivity type different from the first conductivity type. A ratio of a thickness of the membrane portion to a combined thickness of the electrode and the piezoelectric layer may be above 3:1 for temperature compensation.

Abstract: Various embodiments may relate to a piezoelectric device. The piezoelectric device may include a substrate, and a layered stacked arrangement anchored to the substrate. The layered stacked arrangement may include a piezoelectric layer. The stacked arrangement may also include a first electrode on a first side of the piezoelectric layer. The stacked arrangement may further include a second electrode on a second side of the piezoelectric layer opposite the first side. The piezoelectric layer may include a first region including one or more dipole domains of a first type, and one or more dipole domains of a second type. The first electrode may be at least partially in contact with the first region and at least partially in contact with the second region.

Abstract: A method for thin film encapsulation (TFE) of a microelectromechanical system (MEMS) device, including providing a substrate; forming a MEMS device on the substrate; forming one or more etching channels adjacent to the MEMS device; providing one or more cavities below the MEMS device; and forming one or more cavities above the MEMS device.

Abstract: A method of fabricating encapsulated microelectromechanical system (MEMS) devices, comprising: providing a substrate having one or more MEMS devices formed thereon; depositing a sacrificial layer over the substrate and the one or more MEMS devices; patterning the sacrificial layer to define one or more cavities in the sacrificial layer and around the one or more MEMS devices; forming a cap layer over the sacrificial layer and the one or more cavities, the cap layer having one or more etch holes defined therein; removing the sacrificial layer by etching the sacrificial layer at least through the one or more etch holes; and depositing a sealing layer over the cap layer and the one or more etch holes to encapsulate the one or more MEMS devices, the substrate, and the cap layer.

Abstract: A method for thin film encapsulation (TFE) of a microelectromechanical system (MEMS) device, including providing a substrate; forming a MEMS device on the substrate; forming one or more etching channels adjacent to the MEMS device; providing one or more cavities below the MEMS device; and forming one or more cavities above the MEMS device.

Abstract: A method for encapsulating a micro-electromechanical (MEMS) device, the method comprising: providing a sacrificial layer arrangement over the MEMS device; providing a first encapsulation layer over the sacrificial layer arrangement, the first encapsulation layer defining at least one aperture; providing a second encapsulation layer over the at least one aperture, the second encapsulation layer being provided to allow removal of the sacrificial layer arrangement around the second encapsulation layer; and removing the sacrificial layer arrangement through the at least one aperture to allow the second encapsulation layer to cover the at least one aperture thereby encapsulating the MEMS device.