Patents by Inventor Jaideep CHAUHAN

Jaideep CHAUHAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CMOS wideband RF amplifier with gain roll-off compensation for external parasitics
    Patent number: 10715087
    Abstract: The present disclosure relates to an integrated wideband Radio Frequency (RF) amplifier, based on a complementary metal oxide semiconductor (CMOS) technology. In an embodiment the amplifier addresses the shortcomings of conventional wideband amplifiers and is based on a distributed amplifier (DA) topology which typically exhibit severe performance degradation when externally loaded with parasitic circuit elements. In an embodiment of the present invention a buffer amplifier at the output of a conventional DA is able to compensate the impact of parasitic elements. The disclosed circuit can be implemented by fabricating the wideband RF amplifier integrated circuit (IC) on a 130 nm CMOS technology or other comparable CMOS technologies.
    Type: Grant
    Filed: July 1, 2016
    Date of Patent: July 14, 2020
    Assignee: Indian Institute of Science
    Inventors: Gaurab Banerjee, Arnab Chakraborty, Jaideep Chauhan
  • CMOS WIDEBAND RF AMPLIFIER WITH GAIN ROLL-OFF COMPENSATION FOR EXTERNAL PARASITICS
    Publication number: 20190013781
    Abstract: The present disclosure relates to an integrated wideband Radio Frequency (RF) amplifier, based on a complementary metal oxide semiconductor (CMOS) technology. In an embodiment the amplifier addresses the shortcomings of conventional wideband amplifiers and is based on a distributed amplifier (DA) topology which typically exhibit severe performance degradation when externally loaded with parasitic circuit elements. In an embodiment of the present invention a buffer amplifier at the output of a conventional DA is able to compensate the impact of parasitic elements. The disclosed circuit can be implemented by fabricating the wideband RF amplifier integrated circuit (IC) on a 130 nm CMOS technology or other comparable CMOS technologies.
    Type: Application
    Filed: July 1, 2016
    Publication date: January 10, 2019
    Applicant: Indian Institute of Science
    Inventors: Gaurab BANERJEE, Arnab CHAKRABORTY, Jaideep CHAUHAN