Abstract: A semiconductor process management system is provided. The semiconductor process management system includes a communicator that receives a process recipe from one or more process apparatuses and receives a measured value for each sampling point from one or more measuring apparatus, and a first determination unit that establishes a mutual influence model between the process recipe and the measured value for each sampling point based on the process recipe and the measured value for each sampling point.

Abstract: A semiconductor process management system is provided. The semiconductor process management system includes a communicator that receives a process recipe from one or more process apparatuses and receives a measured value for each sampling point from one or more measuring apparatus, and a first determination unit that establishes a mutual influence model between the process recipe and the measured value for each sampling point based on the process recipe and the measured value for each sampling point.

Abstract: A showerhead includes a body configured to receive a reaction gas, a nozzle on the body configured to inject the reaction gas to a substrate, and a plurality of conducting members in thermal contact with the body to conduct heat generated from the substrate.

Abstract: A method of forming a carbon type hard mask layer using induced coupled plasma includes loading a substrate onto a lower electrode in a process chamber of an induced coupled plasma (ICP) deposition apparatus, the process chamber including an upper electrode and the lower electrode therein, generating a plasma in the process chamber, injecting a reactive gas into the process chamber such that the reactive gas is activated by colliding with the plasma, the reactive gas including a hydrocarbon compound gas, and applying a bias power to the lower electrode to form a diamond-like carbon layer on the substrate from the activated reactive gas.

Abstract: A filament member, ion source, and an ion implantation apparatus. The filament member may have a plate shape, and the thermoelectron emitter may include slots and a plurality of conductive paths disposed around the slots to emit thermoelectrons.

Abstract: In a method of doping ions into an object, such as a substrate, using plasma, a doping gas may be provided between first and second electrodes in a chamber. An electric field may be formed between the first and the second electrodes to excite the doping gas to a plasma state. The electric field may be formed by applying a first power having a first positive electric potential and a second power having a second positive electric potential, the second positive electric potential being higher than the first positive electric potential. The electric field may be reversed in direction by blocking the second power from being applied to the second electrode. Accumulated ions on the substrate may be effectively neutralized by introducing electrons toward the substrate so that arcing generation may be prevented.

Abstract: A method of doping ions into an object using plasma, including providing a doping gas between a first electrode and a second electrode, where an object is disposed between the first and the second electrodes, applying a first power to the first electrode and grounding the second electrode, exciting the doping gas to a plasma state, directing ions toward the object to be doped, applying a second power to the second electrode and grounding the first electrode, and counting a dose of the ions directed toward the second electrode, and an apparatus for performing the same.

Abstract: The present invention can provide ion implanter devices including an arc chamber including at least a first inner region and a second inner region, an electron emitting device disposed in the arc chamber adjacent the first inner region and adapted to emit electrons, an electron returning device disposed in the arc chamber adjacent the second inner region and adapted to return at least some of the electrons emitted from the electron emitting device into the second inner region; and an electric field and magnetic field generating device adapted to provide a magnetic field to the arc chamber, wherein at least one inner wall of the arc chamber has a convex surface.

Abstract: High-density plasma CVD processes with improved gap filling characteristics are provided. In one exemplary process, the process includes loading a semiconductor substrate into a process chamber. First main process gases, including a silicon source gas, an oxygen gas, a nitrogen free chemical etching gas and a hydrogen gas, are then injected into the process chamber. Thus, a high-density plasma is generated over the semiconductor substrate, and the semiconductor substrate is heated to a temperature in the range of about 550° C. to about 700° C. by the high-density plasma. Thus, a silicon oxide layer is formed to completely fill a gap region without any voids or defects in the semiconductor substrate. In addition, the first main process gases can be replaced with second main process gases including a silicon source gas, an oxygen gas, a nitrogen free chemical etching gas, a hydrogen gas and a helium gas.

Abstract: The present invention can provide ion implanter devices including an arc chamber including at least a first inner region and a second inner region, an electron emitting device disposed in the arc chamber adjacent the first inner region and adapted to emit electrons, an electron returning device disposed in the arc chamber adjacent the second inner region and adapted to return at least some of the electrons emitted from the electron emitting device into the second inner region; and an electric field and magnetic field generating device adapted to provide a magnetic field to the arc chamber, wherein at least one inner wall of the arc chamber has a convex surface.

Abstract: An antenna includes branches having substantially identical shapes. The branches are symmetrically disposed about a central point and extend along at least two concentric patterns whose geometric centers coincide with the central point. The branches each include pattern-forming portions that lie entirely within the concentric patterns, and at least one connecting portion extending between and connecting the pattern-forming portions. Input/output terminals for allowing a voltage to be impressed across the branches are provided at ends of each of the branches.

Abstract: High-density plasma CVD processes with improved gap filling characteristics are provided. In one exemplary process, the process includes loading a semiconductor substrate into a process chamber. First main process gases, including a silicon source gas, an oxygen gas, a nitrogen free chemical etching gas and a hydrogen gas, are then injected into the process chamber. Thus, a high-density plasma is generated over the semiconductor substrate, and the semiconductor substrate is heated to a temperature in the range of about 550° C. to about 700° C. by the high-density plasma. Thus, a silicon oxide layer is formed to completely fill a gap region without any voids or defects in the semiconductor substrate. In addition, the first main process gases can be replaced with second main process gases including a silicon source gas, an oxygen gas, a nitrogen free chemical etching gas, a hydrogen gas and a helium gas.

Abstract: A semiconductor substrate having a polysilicon layer is loaded into a process chamber of a plasma enhanced chemical vapor deposition device. A silicon source gas, a tungsten source gas, and a hydrogen compound gas for reducing a chlorine radical are introduced into the process chamber, to thereby deposit the tungsten silicide layer on the polysilicon layer. The chlorine radical of the silicon source gas is reduced into hydrogen chloride by the hydrogen compound gas and is removed together with an exhaust gas.

Abstract: A semiconductor substrate having a polysilicon layer is loaded into a process chamber of a plasma enhanced chemical vapor deposition device. A silicon source gas, a tungsten source gas, and a hydrogen compound gas for reducing a chlorine radical are introduced into the process chamber, to thereby deposit the tungsten silicide layer on the polysilicon layer. The chlorine radical of the silicon source gas is reduced into hydrogen chloride by the hydrogen compound gas and is removed together with an exhaust gas.