Patents by Inventor Jai-yong Han

Jai-yong Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9534312
    Abstract: A single-crystal graphene sheet includes a polycyclic aromatic molecule wherein a plurality of carbon atoms are covalently bound to each other, the single-crystal graphene sheet comprising between about 1 layer to about 300 layers; and wherein a peak ratio of a Raman D band intensity to a Raman G band intensity is equal to or less than 0.2. Also described is a method for preparing a single-crystal graphene sheet, the method includes forming a catalyst layer, which includes a single-crystal graphitizing metal catalyst sheet; disposing a carbonaceous material on the catalyst layer; and heat-treating the catalyst layer and the carbonaceous material in at least one of an inert atmosphere and a reducing atmosphere. Also described is a transparent electrode including a single-crystal graphene sheet.
    Type: Grant
    Filed: February 12, 2016
    Date of Patent: January 3, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jae-young Choi, Hyeon-Jin Shin, Seon-mi Yoon, Jai-yong Han
  • Publication number: 20160160379
    Abstract: A single-crystal graphene sheet includes a polycyclic aromatic molecule wherein a plurality of carbon atoms are covalently bound to each other, the single-crystal graphene sheet comprising between about 1 layer to about 300 layers; and wherein a peak ratio of a Raman D band intensity to a Raman G band intensity is equal to or less than 0.2. Also described is a method for preparing a single-crystal graphene sheet, the method includes forming a catalyst layer, which includes a single-crystal graphitizing metal catalyst sheet; disposing a carbonaceous material on the catalyst layer; and heat-treating the catalyst layer and the carbonaceous material in at least one of an inert atmosphere and a reducing atmosphere. Also described is a transparent electrode including a single-crystal graphene sheet.
    Type: Application
    Filed: February 12, 2016
    Publication date: June 9, 2016
    Inventors: Jae-young CHOI, Hyeon-Jin SHIN, Seon-mi YOON, Jai-yong HAN
  • Patent number: 8513641
    Abstract: Disclosed herein is a nanowire including silicon rich oxide and a method for producing the same. The nanowire exhibits excellent electrically conducting properties and optical characteristics, and therefore is effectively used in a variety of applications including, for example, solar cells, sensors, photodetectors, light emitting diodes, laser diodes, EL devices, PL devices, CL devices, FETs, CTFs, surface plasmon waveguides, MOS capacitors and the like.
    Type: Grant
    Filed: January 8, 2009
    Date of Patent: August 20, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun Kyung Lee, Byoung Lyong Choi, Gyeong Su Park, Jai Yong Han
  • Patent number: 8349076
    Abstract: A method of fabricating a freestanding gallium nitride (GaN) substrate includes: preparing a GaN substrate within a reactor; supplying HCl and NH3 gases into the reactor to treat the surface of the GaN substrate and forming a porous GaN layer; forming a GaN crystal growth layer on the porous GaN layer; and cooling the GaN substrate on which the GaN crystal growth layer has been formed and separating the GaN crystal growth layer from the substrate. According to the fabrication method, the entire process including forming a porous GaN layer and a thick GaN layer is performed in-situ within a single reactor. The method is significantly simplified compared to a conventional fabrication method. The fabrication method enables the entire process to be performed in one chamber while allowing GaN surface treatment and growth to be performed using HVPE process gases, thus resulting in a significant reduction in manufacturing costs.
    Type: Grant
    Filed: October 11, 2006
    Date of Patent: January 8, 2013
    Assignee: Samsung Corning Precision Materials Co., Ltd.
    Inventors: In-Jae Song, Jai-yong Han
  • Publication number: 20120108001
    Abstract: Disclosed are a relatively high-efficiency solar cell and a method for fabricating the same using a micro-heater array. The solar cell may include first and second micro-heaters intersecting each other or being parallel to each other on a substrate, and a plurality of InxGa1-xN p-n junction layers formed using the first and second micro-heaters. The solar cell has improved efficiency because sunlight with various wavelengths may be effectively absorbed by the plurality of InxGa1-xN p-n junction layers. Furthermore, relatively large-sized solar cells may be fabricated, because the plurality of InxGa1-xN p-n junction layers may be formed on a glass substrate using a micro-heater array.
    Type: Application
    Filed: December 29, 2011
    Publication date: May 3, 2012
    Applicants: SAMSUNG SDI CO., LTD., SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Junhee CHOI, Jai Yong HAN, Andrei ZOULKARNEEV
  • Publication number: 20120103405
    Abstract: Disclosed are a relatively high-efficiency solar cell and a method for fabricating the same using a micro-heater array. The solar cell may include first and second micro-heaters intersecting each other or being parallel to each other on a substrate, and a plurality of InxGa1-xN p-n junction layers formed using the first and second micro-heaters. The solar cell has improved efficiency because sunlight with various wavelengths may be effectively absorbed by the plurality of InxGa1-xN p-n junction layers. Furthermore, relatively large-sized solar cells may be fabricated, because the plurality of InxGa1-xN p-n junction layers may be formed on a glass substrate using a micro-heater array.
    Type: Application
    Filed: December 29, 2011
    Publication date: May 3, 2012
    Applicants: SAMSUNG SDI CO., LTD., SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Junhee CHOI, Jai Yong HAN, Andrei ZOULKARNEEV
  • Patent number: 8138416
    Abstract: Disclosed are a relatively high-efficiency solar cell and a method for fabricating the same using a micro-heater array. The solar cell may include first and second micro-heaters intersecting each other or being parallel to each other on a substrate, and a plurality of InxGa1-xN p-n junction layers formed using the first and second micro-heaters. The solar cell has improved efficiency because sunlight with various wavelengths may be effectively absorbed by the plurality of InxGa1-xN p-n junction layers. Furthermore, relatively large-sized solar cells may be fabricated, because the plurality of InxGa1-xN p-n junction layers may be formed on a glass substrate using a micro-heater array.
    Type: Grant
    Filed: February 9, 2009
    Date of Patent: March 20, 2012
    Assignees: Samsung Electronics Co., Ltd., Samsung SDI Co., Ltd.
    Inventors: Junhee Choi, Jai Yong Han, Andrei Zoulkarneev
  • Patent number: 8053854
    Abstract: Example embodiments include micro-heater arrays including first and second micro-heaters disposed perpendicular to or parallel with each other on a substrate and methods of fabricating pn junctions between first and second heating portions using the heat generated from the first and second heating portions, respectively, when applying a voltage to the micro-heater array. Accordingly, when forming pn junctions using micro-heaters, a high-quality pn junction may be fabricated on a glass substrate over a large area.
    Type: Grant
    Filed: September 23, 2008
    Date of Patent: November 8, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Junhee Choi, Sung Soo Park, Andrei Zoulkarneev, Jai Yong Han, Deuk Seok Chung
  • Patent number: 8043942
    Abstract: Disclosed is a method for producing core-shell nanowires in which an insulating film is previously patterned to block the contacts between nanowire cores and nanowire shells. According to the method, core-shell nanowires whose density and position is controllable can be produced in a simple manner. Further disclosed are nanowires produced by the method and a nanowire device comprising the nanowires. The use of the nanowires leads to an increase in the light emitting/receiving area of the device. Therefore, the device exhibits high luminance/efficiency characteristics.
    Type: Grant
    Filed: October 31, 2007
    Date of Patent: October 25, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun Kyung Lee, Jai Yong Han, Byoung Lyong Choi, Kyung Sang Cho
  • Patent number: 8018430
    Abstract: Electrophoretic particles and dielectrophoretic particles are included together in a unit pixel. Each of the electrophoretic particles and the dielectrophoretic particles includes two kinds of particles having different electric properties. The electrophoretic particles include positively charged particles and negatively charged particles. The dielectrophoretic particles include particles having low dielectric constant and particles having high dielectric constant. A first electric field for moving the electrophoretic particles and a second electric field for moving the dielectrophoretic particles are applied to the unit pixel. The second electric field has an asymmetric gradient in the direction where the dielectrophoretic particles move to determine movement directions of the dielectrophoretic particles having different dielectric constants.
    Type: Grant
    Filed: November 30, 2007
    Date of Patent: September 13, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-young Choi, Jai-yong Han
  • Patent number: 8018429
    Abstract: A surface plasmon display device includes metal particles having a constant size within all of the pixel regions between a first electrode and a second electrode and a dielectric layer corresponding to each of the pixel regions formed on an inner surface of a first substrate, wherein the dielectric layer in each of the pixel regions has physical properties for causing the surface plasmon resonance corresponding to a wavelength designated to the corresponding pixel region.
    Type: Grant
    Filed: November 30, 2007
    Date of Patent: September 13, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-young Choi, Jai-yong Han
  • Patent number: 7999996
    Abstract: Disclosed herein are an electrophoresis device comprising a hole-containing structure and a method for fabricating the same. By which electrophoretic particles are embedded into holes, the optical properties of the device can be controlled. The electrophoresis device includes a structure having inherent optical properties, thus realizing improvement in reliability and display quality. Since the electrophoresis device uses a gas or vacuum as a medium of the electrophoretic particles, it can be driven with a high speed.
    Type: Grant
    Filed: October 22, 2007
    Date of Patent: August 16, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae Eun Jang, Jai Yong Han
  • Patent number: 7978398
    Abstract: An electrophoretic particle includes ionic liquid stored in a spherical polymer shell and a charged layer formed on an inner surface of the shell, and a display device includes the electrophoretic particle. The shell is not charged, and the charged layer in the shell is charged. Therefore, particles having different polarities from each other do not stick to each other. Since the electrophoretic particles are dispersed in air, a high response speed can be achieved, a large amount of charges can be formed by the ionic liquid and the charged layer contacting the ionic liquid, and thus, the particles can move with a low driving voltage.
    Type: Grant
    Filed: December 18, 2007
    Date of Patent: July 12, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-young Choi, Jai-yong Han
  • Patent number: 7907327
    Abstract: An electrophoretic display device with high reliability, high reflectance and improved color characteristics. The electrophorectic display device includes unit cells, each of which includes transmissive particles and a reflective panel. The unit cells are vertically laminated or arranged in parallel. In addition, the electrophorectic display device exhibits excellent visibility and has a simple structure.
    Type: Grant
    Filed: June 4, 2008
    Date of Patent: March 15, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae Eun Jang, Jae Eun Jung, Jai Yong Han, Chang Ho Noh
  • Patent number: 7869117
    Abstract: Provided is an electrophoretic display device. The electrophoretic display device includes a first substrate and a second substrate forming a space receiving electrophoretic particles, and a first electrode and a second electrode formed on the first substrate and the second substrate respectively. The electrophoretic particles include reflective particles having a first electric polarity and reflecting a first light in visible wavelength bands, and light emission particles having a second electric polarity and emitting a second light by an optical stimulation. The first and second lights are in a substantially same color range of wavelength in a same pixel region.
    Type: Grant
    Filed: May 23, 2008
    Date of Patent: January 11, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-young Choi, Jai-yong Han
  • Publication number: 20100327258
    Abstract: Disclosed is a method for producing core-shell nanowires in which an insulating film is previously patterned to block the contacts between nanowire cores and nanowire shells. According to the method, core-shell nanowires whose density and position is controllable can be produced in a simple manner. Further disclosed are nanowires produced by the method and a nanowire device comprising the nanowires. The use of the nanowires leads to an increase in the light emitting/receiving area of the device. Therefore, the device exhibits high luminance/efficiency characteristics.
    Type: Application
    Filed: October 31, 2007
    Publication date: December 30, 2010
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eun Kyung LEE, Jai Yong HAN, Byoung Lyong CHOI, Kyung Sang CHO
  • Publication number: 20100065809
    Abstract: Disclosed herein is a nanowire including silicon rich oxide and a method for producing the same. The nanowire exhibits excellent electrically conducting properties and optical characteristics, and therefore is effectively used in a variety of applications including, for example, solar cells, sensors, photodetectors, light emitting diodes, laser diodes, EL devices, PL devices, CL devices, FETs, CTFs, surface plasmon waveguides, MOS capacitors and the like.
    Type: Application
    Filed: January 8, 2009
    Publication date: March 18, 2010
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eun Kyung LEE, Byoung Lyong CHOI, Gyeong Su PARK, Jai Yong HAN
  • Publication number: 20090250112
    Abstract: Disclosed are a relatively high-efficiency solar cell and a method for fabricating the same using a micro-heater array. The solar cell may include first and second micro-heaters intersecting each other or being parallel to each other on a substrate, and a plurality of InxGa1-xN p-n junction layers formed using the first and second micro-heaters. The solar cell has improved efficiency because sunlight with various wavelengths may be effectively absorbed by the plurality of InxGa1-xN p-n junction layers. Furthermore, relatively large-sized solar cells may be fabricated, because the plurality of InxGa1-xN p-n junction layers may be formed on a glass substrate using a micro-heater array.
    Type: Application
    Filed: February 9, 2009
    Publication date: October 8, 2009
    Inventors: Junhee Choi, Jai Yong Han, Andrei Zoulkarneev
  • Publication number: 20090243040
    Abstract: Example embodiments include micro-heater arrays including first and second micro-heaters disposed perpendicular to or parallel with each other on a substrate and methods of fabricating pn junctions between first and second heating portions using the heat generated from the first and second heating portions, respectively, when applying a voltage to the micro-heater array. Accordingly, when forming pn junctions using micro-heaters, a high-quality pn junction may be fabricated on a glass substrate over a large area.
    Type: Application
    Filed: September 23, 2008
    Publication date: October 1, 2009
    Inventors: Junhee Choi, Sung Soo Park, Andrei Zoulkarneev, Jai Yong Han, Deuk Seok Chung
  • Patent number: 7563660
    Abstract: A silicon film, crystalline film and method for manufacturing the same are provided. The silicon film and/or crystalline film may be an epitaxy-formed layer. A method for manufacturing a silicon film and/or crystalline film may include forming a insulating substrate, forming a buffer layer using a material selected from the group consisting of metals, compounds and/or oxides on the insulating substrate, crystallizing the buffer layer by annealing, and forming a crystalline and/or silicon film by epitaxy. Silicon and crystalline films manufactured by the method provided may have greater crystallinity, greater uniformity and/or higher charge carrier mobility.
    Type: Grant
    Filed: January 6, 2006
    Date of Patent: July 21, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Jai-Yong Han