Patents by Inventor Jai-yong Han
Jai-yong Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9534312Abstract: A single-crystal graphene sheet includes a polycyclic aromatic molecule wherein a plurality of carbon atoms are covalently bound to each other, the single-crystal graphene sheet comprising between about 1 layer to about 300 layers; and wherein a peak ratio of a Raman D band intensity to a Raman G band intensity is equal to or less than 0.2. Also described is a method for preparing a single-crystal graphene sheet, the method includes forming a catalyst layer, which includes a single-crystal graphitizing metal catalyst sheet; disposing a carbonaceous material on the catalyst layer; and heat-treating the catalyst layer and the carbonaceous material in at least one of an inert atmosphere and a reducing atmosphere. Also described is a transparent electrode including a single-crystal graphene sheet.Type: GrantFiled: February 12, 2016Date of Patent: January 3, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jae-young Choi, Hyeon-Jin Shin, Seon-mi Yoon, Jai-yong Han
-
Publication number: 20160160379Abstract: A single-crystal graphene sheet includes a polycyclic aromatic molecule wherein a plurality of carbon atoms are covalently bound to each other, the single-crystal graphene sheet comprising between about 1 layer to about 300 layers; and wherein a peak ratio of a Raman D band intensity to a Raman G band intensity is equal to or less than 0.2. Also described is a method for preparing a single-crystal graphene sheet, the method includes forming a catalyst layer, which includes a single-crystal graphitizing metal catalyst sheet; disposing a carbonaceous material on the catalyst layer; and heat-treating the catalyst layer and the carbonaceous material in at least one of an inert atmosphere and a reducing atmosphere. Also described is a transparent electrode including a single-crystal graphene sheet.Type: ApplicationFiled: February 12, 2016Publication date: June 9, 2016Inventors: Jae-young CHOI, Hyeon-Jin SHIN, Seon-mi YOON, Jai-yong HAN
-
Patent number: 8513641Abstract: Disclosed herein is a nanowire including silicon rich oxide and a method for producing the same. The nanowire exhibits excellent electrically conducting properties and optical characteristics, and therefore is effectively used in a variety of applications including, for example, solar cells, sensors, photodetectors, light emitting diodes, laser diodes, EL devices, PL devices, CL devices, FETs, CTFs, surface plasmon waveguides, MOS capacitors and the like.Type: GrantFiled: January 8, 2009Date of Patent: August 20, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Eun Kyung Lee, Byoung Lyong Choi, Gyeong Su Park, Jai Yong Han
-
Patent number: 8349076Abstract: A method of fabricating a freestanding gallium nitride (GaN) substrate includes: preparing a GaN substrate within a reactor; supplying HCl and NH3 gases into the reactor to treat the surface of the GaN substrate and forming a porous GaN layer; forming a GaN crystal growth layer on the porous GaN layer; and cooling the GaN substrate on which the GaN crystal growth layer has been formed and separating the GaN crystal growth layer from the substrate. According to the fabrication method, the entire process including forming a porous GaN layer and a thick GaN layer is performed in-situ within a single reactor. The method is significantly simplified compared to a conventional fabrication method. The fabrication method enables the entire process to be performed in one chamber while allowing GaN surface treatment and growth to be performed using HVPE process gases, thus resulting in a significant reduction in manufacturing costs.Type: GrantFiled: October 11, 2006Date of Patent: January 8, 2013Assignee: Samsung Corning Precision Materials Co., Ltd.Inventors: In-Jae Song, Jai-yong Han
-
Publication number: 20120108001Abstract: Disclosed are a relatively high-efficiency solar cell and a method for fabricating the same using a micro-heater array. The solar cell may include first and second micro-heaters intersecting each other or being parallel to each other on a substrate, and a plurality of InxGa1-xN p-n junction layers formed using the first and second micro-heaters. The solar cell has improved efficiency because sunlight with various wavelengths may be effectively absorbed by the plurality of InxGa1-xN p-n junction layers. Furthermore, relatively large-sized solar cells may be fabricated, because the plurality of InxGa1-xN p-n junction layers may be formed on a glass substrate using a micro-heater array.Type: ApplicationFiled: December 29, 2011Publication date: May 3, 2012Applicants: SAMSUNG SDI CO., LTD., SAMSUNG ELECTRONICS CO., LTD.Inventors: Junhee CHOI, Jai Yong HAN, Andrei ZOULKARNEEV
-
Publication number: 20120103405Abstract: Disclosed are a relatively high-efficiency solar cell and a method for fabricating the same using a micro-heater array. The solar cell may include first and second micro-heaters intersecting each other or being parallel to each other on a substrate, and a plurality of InxGa1-xN p-n junction layers formed using the first and second micro-heaters. The solar cell has improved efficiency because sunlight with various wavelengths may be effectively absorbed by the plurality of InxGa1-xN p-n junction layers. Furthermore, relatively large-sized solar cells may be fabricated, because the plurality of InxGa1-xN p-n junction layers may be formed on a glass substrate using a micro-heater array.Type: ApplicationFiled: December 29, 2011Publication date: May 3, 2012Applicants: SAMSUNG SDI CO., LTD., SAMSUNG ELECTRONICS CO., LTD.Inventors: Junhee CHOI, Jai Yong HAN, Andrei ZOULKARNEEV
-
Patent number: 8138416Abstract: Disclosed are a relatively high-efficiency solar cell and a method for fabricating the same using a micro-heater array. The solar cell may include first and second micro-heaters intersecting each other or being parallel to each other on a substrate, and a plurality of InxGa1-xN p-n junction layers formed using the first and second micro-heaters. The solar cell has improved efficiency because sunlight with various wavelengths may be effectively absorbed by the plurality of InxGa1-xN p-n junction layers. Furthermore, relatively large-sized solar cells may be fabricated, because the plurality of InxGa1-xN p-n junction layers may be formed on a glass substrate using a micro-heater array.Type: GrantFiled: February 9, 2009Date of Patent: March 20, 2012Assignees: Samsung Electronics Co., Ltd., Samsung SDI Co., Ltd.Inventors: Junhee Choi, Jai Yong Han, Andrei Zoulkarneev
-
Patent number: 8053854Abstract: Example embodiments include micro-heater arrays including first and second micro-heaters disposed perpendicular to or parallel with each other on a substrate and methods of fabricating pn junctions between first and second heating portions using the heat generated from the first and second heating portions, respectively, when applying a voltage to the micro-heater array. Accordingly, when forming pn junctions using micro-heaters, a high-quality pn junction may be fabricated on a glass substrate over a large area.Type: GrantFiled: September 23, 2008Date of Patent: November 8, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Junhee Choi, Sung Soo Park, Andrei Zoulkarneev, Jai Yong Han, Deuk Seok Chung
-
Patent number: 8043942Abstract: Disclosed is a method for producing core-shell nanowires in which an insulating film is previously patterned to block the contacts between nanowire cores and nanowire shells. According to the method, core-shell nanowires whose density and position is controllable can be produced in a simple manner. Further disclosed are nanowires produced by the method and a nanowire device comprising the nanowires. The use of the nanowires leads to an increase in the light emitting/receiving area of the device. Therefore, the device exhibits high luminance/efficiency characteristics.Type: GrantFiled: October 31, 2007Date of Patent: October 25, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Eun Kyung Lee, Jai Yong Han, Byoung Lyong Choi, Kyung Sang Cho
-
Patent number: 8018430Abstract: Electrophoretic particles and dielectrophoretic particles are included together in a unit pixel. Each of the electrophoretic particles and the dielectrophoretic particles includes two kinds of particles having different electric properties. The electrophoretic particles include positively charged particles and negatively charged particles. The dielectrophoretic particles include particles having low dielectric constant and particles having high dielectric constant. A first electric field for moving the electrophoretic particles and a second electric field for moving the dielectrophoretic particles are applied to the unit pixel. The second electric field has an asymmetric gradient in the direction where the dielectrophoretic particles move to determine movement directions of the dielectrophoretic particles having different dielectric constants.Type: GrantFiled: November 30, 2007Date of Patent: September 13, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Jae-young Choi, Jai-yong Han
-
Patent number: 8018429Abstract: A surface plasmon display device includes metal particles having a constant size within all of the pixel regions between a first electrode and a second electrode and a dielectric layer corresponding to each of the pixel regions formed on an inner surface of a first substrate, wherein the dielectric layer in each of the pixel regions has physical properties for causing the surface plasmon resonance corresponding to a wavelength designated to the corresponding pixel region.Type: GrantFiled: November 30, 2007Date of Patent: September 13, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Jae-young Choi, Jai-yong Han
-
Patent number: 7999996Abstract: Disclosed herein are an electrophoresis device comprising a hole-containing structure and a method for fabricating the same. By which electrophoretic particles are embedded into holes, the optical properties of the device can be controlled. The electrophoresis device includes a structure having inherent optical properties, thus realizing improvement in reliability and display quality. Since the electrophoresis device uses a gas or vacuum as a medium of the electrophoretic particles, it can be driven with a high speed.Type: GrantFiled: October 22, 2007Date of Patent: August 16, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Jae Eun Jang, Jai Yong Han
-
Patent number: 7978398Abstract: An electrophoretic particle includes ionic liquid stored in a spherical polymer shell and a charged layer formed on an inner surface of the shell, and a display device includes the electrophoretic particle. The shell is not charged, and the charged layer in the shell is charged. Therefore, particles having different polarities from each other do not stick to each other. Since the electrophoretic particles are dispersed in air, a high response speed can be achieved, a large amount of charges can be formed by the ionic liquid and the charged layer contacting the ionic liquid, and thus, the particles can move with a low driving voltage.Type: GrantFiled: December 18, 2007Date of Patent: July 12, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Jae-young Choi, Jai-yong Han
-
Patent number: 7907327Abstract: An electrophoretic display device with high reliability, high reflectance and improved color characteristics. The electrophorectic display device includes unit cells, each of which includes transmissive particles and a reflective panel. The unit cells are vertically laminated or arranged in parallel. In addition, the electrophorectic display device exhibits excellent visibility and has a simple structure.Type: GrantFiled: June 4, 2008Date of Patent: March 15, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Jae Eun Jang, Jae Eun Jung, Jai Yong Han, Chang Ho Noh
-
Patent number: 7869117Abstract: Provided is an electrophoretic display device. The electrophoretic display device includes a first substrate and a second substrate forming a space receiving electrophoretic particles, and a first electrode and a second electrode formed on the first substrate and the second substrate respectively. The electrophoretic particles include reflective particles having a first electric polarity and reflecting a first light in visible wavelength bands, and light emission particles having a second electric polarity and emitting a second light by an optical stimulation. The first and second lights are in a substantially same color range of wavelength in a same pixel region.Type: GrantFiled: May 23, 2008Date of Patent: January 11, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Jae-young Choi, Jai-yong Han
-
Publication number: 20100327258Abstract: Disclosed is a method for producing core-shell nanowires in which an insulating film is previously patterned to block the contacts between nanowire cores and nanowire shells. According to the method, core-shell nanowires whose density and position is controllable can be produced in a simple manner. Further disclosed are nanowires produced by the method and a nanowire device comprising the nanowires. The use of the nanowires leads to an increase in the light emitting/receiving area of the device. Therefore, the device exhibits high luminance/efficiency characteristics.Type: ApplicationFiled: October 31, 2007Publication date: December 30, 2010Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Eun Kyung LEE, Jai Yong HAN, Byoung Lyong CHOI, Kyung Sang CHO
-
Publication number: 20100065809Abstract: Disclosed herein is a nanowire including silicon rich oxide and a method for producing the same. The nanowire exhibits excellent electrically conducting properties and optical characteristics, and therefore is effectively used in a variety of applications including, for example, solar cells, sensors, photodetectors, light emitting diodes, laser diodes, EL devices, PL devices, CL devices, FETs, CTFs, surface plasmon waveguides, MOS capacitors and the like.Type: ApplicationFiled: January 8, 2009Publication date: March 18, 2010Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Eun Kyung LEE, Byoung Lyong CHOI, Gyeong Su PARK, Jai Yong HAN
-
Publication number: 20090250112Abstract: Disclosed are a relatively high-efficiency solar cell and a method for fabricating the same using a micro-heater array. The solar cell may include first and second micro-heaters intersecting each other or being parallel to each other on a substrate, and a plurality of InxGa1-xN p-n junction layers formed using the first and second micro-heaters. The solar cell has improved efficiency because sunlight with various wavelengths may be effectively absorbed by the plurality of InxGa1-xN p-n junction layers. Furthermore, relatively large-sized solar cells may be fabricated, because the plurality of InxGa1-xN p-n junction layers may be formed on a glass substrate using a micro-heater array.Type: ApplicationFiled: February 9, 2009Publication date: October 8, 2009Inventors: Junhee Choi, Jai Yong Han, Andrei Zoulkarneev
-
Publication number: 20090243040Abstract: Example embodiments include micro-heater arrays including first and second micro-heaters disposed perpendicular to or parallel with each other on a substrate and methods of fabricating pn junctions between first and second heating portions using the heat generated from the first and second heating portions, respectively, when applying a voltage to the micro-heater array. Accordingly, when forming pn junctions using micro-heaters, a high-quality pn junction may be fabricated on a glass substrate over a large area.Type: ApplicationFiled: September 23, 2008Publication date: October 1, 2009Inventors: Junhee Choi, Sung Soo Park, Andrei Zoulkarneev, Jai Yong Han, Deuk Seok Chung
-
Patent number: 7563660Abstract: A silicon film, crystalline film and method for manufacturing the same are provided. The silicon film and/or crystalline film may be an epitaxy-formed layer. A method for manufacturing a silicon film and/or crystalline film may include forming a insulating substrate, forming a buffer layer using a material selected from the group consisting of metals, compounds and/or oxides on the insulating substrate, crystallizing the buffer layer by annealing, and forming a crystalline and/or silicon film by epitaxy. Silicon and crystalline films manufactured by the method provided may have greater crystallinity, greater uniformity and/or higher charge carrier mobility.Type: GrantFiled: January 6, 2006Date of Patent: July 21, 2009Assignee: Samsung Electronics Co., Ltd.Inventor: Jai-Yong Han