Patents by Inventor Jake Kaminsky

Jake Kaminsky has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11837471
    Abstract: A method of forming a semiconductor device includes depositing a first layer over a substrate and patterning the first layer using an extreme ultraviolet (EUV) lithography process to form a patterned layer and expose portions of the substrate. The method includes, in a plasma processing chamber, generating a first plasma from a gas mixture including SiCl4 and one or more of argon, helium, nitrogen, and hydrogen. The method includes exposing the substrate to the first plasma to deposit a second layer including silicon over the patterned layer.
    Type: Grant
    Filed: December 10, 2020
    Date of Patent: December 5, 2023
    Assignee: Tokyo Electron Limited
    Inventors: Katie Lutker-Lee, Jake Kaminsky, Yu-Hao Tsai, Angelique Raley, Mingmei Wang
  • Publication number: 20210183656
    Abstract: A method of forming a semiconductor device includes depositing a first layer over a substrate and patterning the first layer using an extreme ultraviolet (EUV) lithography process to form a patterned layer and expose portions of the substrate. The method includes, in a plasma processing chamber, generating a first plasma from a gas mixture including SiCl4 and one or more of argon, helium, nitrogen, and hydrogen. The method includes exposing the substrate to the first plasma to deposit a second layer including silicon over the patterned layer.
    Type: Application
    Filed: December 10, 2020
    Publication date: June 17, 2021
    Inventors: Katie Lutker-Lee, Jake Kaminsky, Yu-Hao Tsai, Angelique Raley, Mingmei Wang