Abstract: The present invention relates to a nanoelectronic device, comprising a substrate layer (10), a first electrode layer (12) disposed on the substrate layer (10), a dielectric layer (16) disposed on the first electrode layer (12), a second electrode layer (18) disposed on the dielectric layer (16), wherein the dielectric layer (16) and the second electrode layer (18) are dimensioned such that at least one protruding portion (18a, 18b) of the second electrode layer (18) is formed in which the second electrode layer (18) extends beyond the dielectric layer such that opposing faces of the first and second electrode are formed (16), at least one semiconductor layer (20) disposed between the first electrode layer (12), one of the protruding portions (18a, 18b) of the second electrode layer (18) and the dielectric layer (16); and a gating arrangement (22) in contact with at least the semiconductor layer (20) as well as the first (12) and second (18) electrode layers.