Patents by Inventor Jakob NILSSON
Jakob NILSSON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230036848Abstract: The present invention relates to an energy storage device comprising a positive electrode, a negative electrode, and an aqueous polymer electrolyte disposed between the positive electrode and the negative electrode. At least one of the electrodes is an organic electrode. The aqueous polymer electrolyte comprises a metal ion component comprising a metal cation being Na+ or K+; a polymer or copolymer comprising at least one monomer unit being a carboxylic acid. At least 20 mol-% of a total amount of monomers in the polymer is monomers comprising carboxylic acid.Type: ApplicationFiled: November 11, 2020Publication date: February 2, 2023Applicant: Ligna Energy ABInventors: Ziyauddin Khan, Jakob Nilsson, Ujwala Ail, Nadia Ajjan, Jaywant Phopase, Xavier Crispin, Olle Inganäs
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Patent number: 10593540Abstract: A method of exchanging or transforming end groups in and/or improving the ferroelectric properties of a PVDF-TrFE co-polymer is disclosed. A bulky or chemically dissimilar end group, such as an iodine, sulfate, aldehyde or carboxylic acid end group, may be transformed to a hydrogen, fluorine or chlorine atom. A method of making a PVDF-TrFE co-polymer is disclosed, including polymerizing a mixture of VDF and TrFE using an initiator, and transforming a bulky or chemically dissimilar end group to a hydrogen, fluorine or chlorine atom. A PVDF-TrFE co-polymer or other fluorinated alkene polymer is also disclosed. The co-polymer may be used as a ferroelectric, electromechanical, piezoelectric or dielectric material in an electronic device.Type: GrantFiled: January 16, 2019Date of Patent: March 17, 2020Inventors: Jakob Nilsson, Christian Brox-Nilsen
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Patent number: 10453853Abstract: A ferroelectric memory cell (1) and a memory device (100) comprising one or more such cells (1). The ferroelectric memory cell comprises a stack (4) of layers arranged on a flexible substrate (3). Said stack comprises an electrically active part (4a) and a protective layer (11) for protecting the electrically active part against scratches and abrasion. Said electrically active part comprises a bottom electrode layer (5) and a top electrode layer (9) and at least one ferroelectric memory material layer (7) between said electrodes. The stack further comprises a buffer layer (13) arranged between the top electrode layer (9) and the protective layer (11). The buffer layer (13) is adapted for at least partially absorbing a lateral dimensional change (?L) occurring in the protective layer (11) and thus preventing said dimensional change (?L) from being transferred to the electrically active part (4a), thereby reducing the risk of short circuit to occur between the electrodes.Type: GrantFiled: July 28, 2016Date of Patent: October 22, 2019Assignee: THIN FILM ELECTRONICS ASAInventors: Christer Karlsson, Olle Jonny Hagel, Jakob Nilsson, Per Bröms
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Publication number: 20190148126Abstract: A method of exchanging or transforming end groups in and/or improving the ferroelectric properties of a PVDF-TrFE co-polymer is disclosed. A bulky or chemically dissimilar end group, such as an iodine, sulfate, aldehyde or carboxylic acid end group, may be transformed to a hydrogen, fluorine or chlorine atom. A method of making a PVDF-TrFE co-polymer is disclosed, including polymerizing a mixture of VDF and TrFE using an initiator, and transforming a bulky or chemically dissimilar end group to a hydrogen, fluorine or chlorine atom. A PVDF-TrFE co-polymer or other fluorinated alkene polymer is also disclosed. The co-polymer may be used as a ferroelectric, electromechanical, piezoelectric or dielectric material in an electronic device.Type: ApplicationFiled: January 16, 2019Publication date: May 16, 2019Applicant: Xerox CorporationInventors: Jakob NILSSON, Christian BROX-NILSEN
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Patent number: 10224199Abstract: A method of exchanging or transforming end groups in and/or improving the ferroelectric properties of a PVDF-TrFE co-polymer is disclosed. A bulky or chemically dissimilar end group, such as an iodine, sulfate, aldehyde or carboxylic acid end group, may be transformed to a hydrogen, fluorine or chlorine atom. A method of making a PVDF-TrFE co-polymer is disclosed, including polymerizing a mixture of VDF and TrFE using an initiator, and transforming a bulky or chemically dissimilar end group to a hydrogen, fluorine or chlorine atom. A PVDF-TrFE co-polymer or other fluorinated alkene polymer is also disclosed. The co-polymer may be used as a ferroelectric, electromechanical, piezoelectric or dielectric material in an electronic device.Type: GrantFiled: July 7, 2017Date of Patent: March 5, 2019Inventors: Jakob Nilsson, Christian Brox-Nilsen
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Patent number: 9934836Abstract: An electronic component (1) and an electronic device (100) comprising one or more such components (1). The electronic component (1) comprises a stack (4) of layers arranged on a flexible substrate (3). Said stack comprises an electrically active part (4a) and a protective layer (11) for protecting the electrically active part against scratches and abrasion. Said electrically active part comprises a bottom electrode layer (5) and a top electrode layer (9) and at least one insulating or semi-insulating layer (7) between said electrodes. The stack further comprises a buffer layer (13), arranged between the top electrode layer (9) and the protective layer (11). The buffer layer (13) is adapted for at least partially absorbing a lateral dimensional change (?L) occurring in the protective layer (11) and thus preventing said dimensional change (?L) from being transferred to the electrically active part (4a), thereby reducing the risk of short circuit to occur between the electrodes.Type: GrantFiled: June 21, 2012Date of Patent: April 3, 2018Assignee: THIN FILM ELECTRONICS ASAInventors: Christer Karlsson, Olle Jonny Hagel, Jakob Nilsson, Per Bröms
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Publication number: 20170309470Abstract: A method of exchanging or transforming end groups in and/or improving the ferroelectric properties of a PVDF-TrFE co-polymer is disclosed. A bulky or chemically dissimilar end group, such as an iodine, sulfate, aldehyde or carboxylic acid end group, may be transformed to a hydrogen, fluorine or chlorine atom. A method of making a PVDF-TrFE co-polymer is disclosed, including polymerizing a mixture of VDF and TrFE using an initiator, and transforming a bulky or chemically dissimilar end group to a hydrogen, fluorine or chlorine atom. A PVDF-TrFE co-polymer or other fluorinated alkene polymer is also disclosed. The co-polymer may be used as a ferroelectric, electromechanical, piezoelectric or dielectric material in an electronic device.Type: ApplicationFiled: July 7, 2017Publication date: October 26, 2017Applicant: Thin Film Electronics ASAInventors: Jakob NILSSON, Christian BROX-NILSEN
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Publication number: 20170242313Abstract: The present disclosure concerns an encapsulated electrochromic display and a method for encapsulating the same. The method includes forming the electrochromic display on a first encapsulation layer, conditioning the electrochromic display in an environment having a predetermined minimum water vapor therein, and applying a second encapsulation layer on the electrochromic display. The electrochromic display includes at least a first electrode, a second electrode, and an electrochromic layer between the first and second electrodes. At least one of the first and second electrodes is formed by a roll-to-roll printing process and comprises a material having an air or water vapor permeability sufficient to allow water vapor to permeate the electrochromic layer during the roll-to-roll printing process, and at least one of the first and second encapsulation layers is optically transparent.Type: ApplicationFiled: February 22, 2017Publication date: August 24, 2017Applicant: Thin Film Electronics ASAInventors: Annelie EVEBORN, Olle HAGEL, Jakob NILSSON, Susanne NORLEN, Mikko PAAKKOLANVAARA
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Patent number: 9735004Abstract: A method of exchanging or transforming end groups in and/or improving the ferroelectric properties of a PVDF-TrFE co-polymer is disclosed. A bulky or chemically dissimilar end group, such as an iodine, sulfate, aldehyde or carboxylic acid end group, may be transformed to a hydrogen, fluorine or chlorine atom. A method of making a PVDF-TrFE co-polymer is disclosed, including polymerizing a mixture of VDF and TrFE using an initiator, and transforming a bulky or chemically dissimilar end group to a hydrogen, fluorine or chlorine atom. A PVDF-TrFE co-polymer or other fluorinated alkene polymer is also disclosed. The co-polymer may be used as a ferroelectric, electromechanical, piezoelectric or dielectric material in an electronic device.Type: GrantFiled: August 4, 2016Date of Patent: August 15, 2017Assignee: Thin Film Electronics ASAInventors: Jakob Nilsson, Christian Brox-Nilsen
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Publication number: 20170040156Abstract: A method of exchanging or transforming end groups in and/or improving the ferroelectric properties of a PVDF-TrFE co-polymer is disclosed. A bulky or chemically dissimilar end group, such as an iodine, sulfate, aldehyde or carboxylic acid end group, may be transformed to a hydrogen, fluorine or chlorine atom. A method of making a PVDF-TrFE co-polymer is disclosed, including polymerizing a mixture of VDF and TrFE using an initiator, and transforming a bulky or chemically dissimilar end group to a hydrogen, fluorine or chlorine atom. A PVDF-TrFE co-polymer or other fluorinated alkene polymer is also disclosed. The co-polymer may be used as a ferroelectric, electromechanical, piezoelectric or dielectric material in an electronic device.Type: ApplicationFiled: August 4, 2016Publication date: February 9, 2017Applicant: Thin Film Electronics ASAInventors: Jakob NILSSON, Christian BROX-NILSEN
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Publication number: 20160336334Abstract: A ferroelectric memory cell (1) and a memory device (100) comprising one or more such cells (1). The ferroelectric memory cell comprises a stack (4) of layers arranged on a flexible substrate (3). Said stack comprises an electrically active part (4a) and a protective layer (11) for protecting the electrically active part against scratches and abrasion. Said electrically active part comprises a bottom electrode layer (5) and a top electrode layer (9) and at least one ferroelectric memory material layer (7) between said electrodes. The stack further comprises a buffer layer (13) arranged between the top electrode layer (9) and the protective layer (11). The buffer layer (13) is adapted for at least partially absorbing a lateral dimensional change (?L) occurring in the protective layer (11) and thus preventing said dimensional change (?L) from being transferred to the electrically active part (4a), thereby reducing the risk of short circuit to occur between the electrodes.Type: ApplicationFiled: July 28, 2016Publication date: November 17, 2016Inventors: Christer Karlsson, Olle Jonny Hagel, Jakob Nilsson, Per Bröms
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Patent number: 9412705Abstract: A ferroelectric memory cell (1) and a memory device (100) comprising one or more such cells (1). The ferroelectric memory cell comprises a stack (4) of layers arranged on a flexible substrate (3). Said stack comprises an electrically active part (4a) and a protective layer (11) for protecting the electrically active part against scratches and abrasion. Said electrically active part comprises a bottom electrode layer (5) and a top electrode layer (9) and at least one ferroelectric memory material layer (7) between said electrodes. The stack further comprises a buffer layer (13) arranged between the top electrode layer (9) and the protective layer (11). The buffer layer (13) is adapted for at least partially absorbing a lateral dimensional change (?L) occurring in the protective layer (11) and thus preventing said dimensional change (?L) from being transferred to the electrically active part (4a), thereby reducing the risk of short circuit to occur between the electrodes.Type: GrantFiled: June 27, 2011Date of Patent: August 9, 2016Assignee: Thin Film Electronics ASAInventors: Christer Karlsson, Olle Jonny Hagel, Jakob Nilsson, Per Bröms
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Patent number: 9063408Abstract: The invention to provide curable materials, comprising photo-reactive compounds, in particular, photoinitiators and polymerizable mono- or multifunctional monomers such as acrylates or epoxides. The material may also contain fluoro-surfactants completely or partly terminated by functional groups with the ability to bind covalently to said chemical composition under curing. The curable compositions are either purely acrylate based or a hybrid of different types of monomers such as acrylates, epoxides or vinyl ethers. The polymerizable monomers may cure with the use of different types of photoinitiator, such as free radical photoinitiators or cationic photoinitiators, ultimately forming a hybrid resist comprising interpenetrating networks of different types of monomers e.g. acrylates and epoxides. The acrylate/epoxide hybrid system has showed improved replication properties in terms of high nano-imprint lithography process fidelity, due to increased conversion of acrylates and low shrinkage.Type: GrantFiled: December 10, 2009Date of Patent: June 23, 2015Assignee: Obducat ABInventors: Jakob Nilsson, Matthias Keil, Johan Ring, Babak Heidari
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Publication number: 20140216791Abstract: An electronic component (1) and an electronic device (100) comprising one or more such components (1). The electronic component (1) comprises a stack (4) of layers arranged on a flexible substrate (3). Said stack comprises an electrically active part (4a) and a protective layer (11) for protecting the electrically active part against scratches and abrasion. Said electrically active part comprises a bottom electrode layer (5) and a top electrode layer (9) and at least one insulating or semi-insulating layer (7) between said electrodes. The stack further comprises a buffer layer (13), arranged between the top electrode layer (9) and the protective layer (11). The buffer layer (13) is adapted for at least partially absorbing a lateral dimensional change (?L) occurring in the protective layer (11) and thus preventing said dimensional change (?L) from being transferred to the electrically active part (4a), thereby reducing the risk of short circuit to occur between the electrodes.Type: ApplicationFiled: June 21, 2012Publication date: August 7, 2014Applicant: THIN FILM ELECTRONICS ASAInventors: Christer Karlsson, Olle Jonny Hagel, Jakob Nilsson, Per Bröms
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Publication number: 20140210026Abstract: A ferroelectric memory cell (1) and a memory device (100) comprising one or more such cells (1). The ferroelectric memory cell comprises a stack (4) of layers arranged on a flexible substrate (3). Said stack comprises an electrically active part (4a) and a protective layer (11) for protecting the electrically active part against scratches and abrasion. Said electrically active part comprises a bottom electrode layer (5) and a top electrode layer (9) and at least one ferroelectric memory material layer (7) between said electrodes. The stack further comprises a buffer layer (13) arranged between the top electrode layer (9) and the protective layer (11). The buffer layer (13) is adapted for at least partially absorbing a lateral dimensional change (?L) occurring in the protective layer (11) and thus preventing said dimensional change (?L) from being transferred to the electrically active part (4a), thereby reducing the risk of short circuit to occur between the electrodes.Type: ApplicationFiled: June 27, 2011Publication date: July 31, 2014Applicant: THIN FILM ELECTRONICS ASAInventors: Christer Karlsson, Olle Jonny Hagel, Jakob Nilsson, Per Bröms
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Patent number: 8426025Abstract: The invention provides a modification of a polymer film surface interaction properties. In this process a polymer carrier object is covered by a chemical composition, comprising photo-polymerizable compounds, photo-initiators or catalysts with the ability to initiate polymerization and semi-fluorinated molecules. The so-produced polymer mold contains semi-fluorinated moieties, which are predominantly located on the surface and on the surface near region of the patterned surface. The polymer mold is suitable as a template with modified properties in a nano-imprint lithography process.Type: GrantFiled: December 10, 2009Date of Patent: April 23, 2013Assignee: Obducat ABInventors: Matthias Keil, Jakob Nilsson, Johan Ring, Babak Heidari
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Publication number: 20110105553Abstract: The present invention relates to novel GABAA/BzR ligands of the general formulas (I), (II) and (III) wherein R1 is selected from the group consisting of hydrogen, halogen, haloalkyl having 1-2 carbon atoms, alkoxy having 1 to 3 carbon atoms in the alkyl chain, alkyl having 1 to 3 carbon atoms, and nitro, and R2 is selected from the group consisting of hydrogen, halogen and alkyl having 1 to 2 carbon atoms, as well as the use of these compounds for treating anxiolytic, anticonvulsant, sedative-hypnotic and myorelaxant conditions as well as anxiogenic, somnolytic and convulsant conditions in mammals including pharmaceutical compositions comprising the sameType: ApplicationFiled: April 2, 2009Publication date: May 5, 2011Inventors: Mogens Nielsen, Tommy Liljefors, Jakob Nilsson, Olov Sterner
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Publication number: 20110092525Abstract: The resent invention relates to novel compounds of the general formula (I) having anxiolytic, anticonvulsant, sedative-hypnotic and myorelaxant conditions as well as anxiogenic, somnolytic and convulsant conditions in mammals, including humans, as GABAA receptor modulator.Type: ApplicationFiled: April 2, 2009Publication date: April 21, 2011Inventors: Mogens Nielsen, Tommy Liljefors, Jakob Nilsson, Olov Sterner
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Publication number: 20100155988Abstract: The invention provides a modification of a polymer film surface interaction properties. In this process a polymer carrier object is covered by a chemical composition, comprising photo-polymerizable compounds, photo-initiators or catalysts with the ability to initiate polymerization and semi-fluorinated molecules. The so-produced polymer mold contains semi-fluorinated moieties, which are predominantly located on the surface and on the surface near region of the patterned surface. The polymer mold is suitable as a template with modified properties in a nano-imprint lithography process.Type: ApplicationFiled: December 10, 2009Publication date: June 24, 2010Applicant: OBDUCAT ABInventors: Matthias KEIL, Jakob NILSSON, Johan RING, Babak HEIDARI
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Publication number: 20100160478Abstract: The invention to provide curable materials, comprising photo-reactive compounds, in particular, photoinitiators and polymerizable mono- or multifunctional monomers such as acrylates or epoxides. The material may also contain fluoro-surfactants completely or partly terminated by functional groups with the ability to bind covalently to said chemical composition under curing. The curable compositions are either purely acrylate based or a hybrid of different types of monomers such as acrylates, epoxides or vinyl ethers. The polymerizable monomers may cure with the use of different types of photoinitiator, such as free radical photoinitiators or cationic photoinitiators, ultimately forming a hybrid resist comprising interpenetrating networks of different types of monomers e.g. acrylates and epoxides. The acrylate/epoxide hybrid system has showed improved replication properties in terms of high nano-imprint lithography process fidelity, due to increased conversion of acrylates and low shrinkage.Type: ApplicationFiled: December 10, 2009Publication date: June 24, 2010Applicant: OBDUCAT ABInventors: Jakob NILSSON, Matthias KEIL, Johan RING, Babak HEIDARI