Abstract: Electrostatic chucks, as described herein, can include at least a first layer, a second layer including an organic material, an encapsulation coating, and a third layer. The second layer is located between the first and third layer such that at least a portion of the second layer is not covered. The encapsulation coating covers at least the portion of the second layer that is not covered. The encapsulation coating can be formed by atomic layer deposition or by chemical vapor deposition such that it encapsulates at least the uncovered portion of the second layer.

Abstract: Described are electrostatic chuck devices that are useful to support a workpiece while processing the workpiece, upper ceramic layer components of electrostatic chuck assemblies, the upper ceramic layer having a deposited dielectric layer, a relatively smooth finish, or both, and related methods.

Abstract: Described are electrostatic chucks that are useful to support a workpiece during a step of processing the workpiece, the electrostatic chuck including a pattern of charge dissipation lines on an insulating layer, the lines having a first conductive layer and a second conductive layer and being arranged to define enclosed fields of the insulating layer between the lines.

Abstract: An electrostatic chuck device having reduced charge injection may include a dielectric layer, a bonding layer, an electrode layer, and an isolator layer, the bonding layer being located between the dielectric layer and the electrode layer, the electrode layer being located between the bonding layer and the isolator layer, and the electrode layer does not directly contact the dielectric layer. The bonding layer comprises a non-electrically conductive polymeric material that covers the electrode layer such that a surface roughness of an upper surface of the bonding layer is less than a surface roughness of an upper surface of the electrode layer. The electrostatic chuck device may also include a charge barrier layer located between the bonding layer and the electrode layer to further reduce a surface roughness of the bonding layer as compared to the electrode layer. The reduced surface roughness reduces charge injection from the electrode layer.

Abstract: An electrostatic chuck includes an electrode and a dielectric layer. When a voltage is applied to the electrode, the electrode is configured to generate an electrostatic force sufficient to flatten a non-flat substrate. The voltage applied to the electrode generates the electrostatic force sufficient to flatten the non-flat substrate such that a surface of the flattened substrate is substantially in contact with a surface of the electrostatic chuck.

Abstract: Described are electrostatic chucks that are useful to support a workpiece during a step of processing the workpiece, and electrostatic chuck base components prepared by an additive manufacturing technique.

Abstract: Electrostatic chucks and methods for forming electrostatic chucks are provided. A method comprises obtaining a substrate comprising an etch resistant coating layer; ablating, with a laser, the etch resistant coating layer so as to remove at least a portion of the etch resistant coating layer so as to provide one or more exposed portions of the substrate; and forming an electrostatic chuck, wherein, when measuring an electrical resistance across the one or more exposed portions of the substrate between two metallized portions, the electrostatic chuck exhibits an electrical isolation of 300 G? or more. An electrostatic chuck comprises a substrate having at least one etch resistant coating layer comprising a laser ablated pattern, wherein the laser ablated pattern comprises one or more exposed portions of the substrate spanning distances of at least 0.5 mm.

Abstract: Described are electrostatic chucks designed for use in supporting a workpiece during a workpiece processing step, the electrostatic chuck including a gas flow system.

Abstract: Described are electrostatic chucks that are useful to support a workpiece during a step of processing the workpiece, the electrostatic chuck including a pattern of charge dissipation lines on an insulating layer, the lines having a first conductive layer and a second conductive layer and being arranged to define enclosed fields of the insulating layer between the lines.

Abstract: An electrostatic chuck solves the problem of wafer sticking by providing conductive paths on raised embossments that are bridged together and are connected to ground that support the wafer substrate above the surface of the electrostatic chuck. Further, laterally spaced electrode patterns and electrode elements which are spaced laterally and longitudinally away from the raised embossments reduce or eliminate electrical coupling during wafer clamping between conductively coated embossments and the electrode elements, thereby creating a low resistance path for charges remaining on the wafer after declamping to promptly travel to ground. The conductive bridge and electrode pattern configuration also substantially reduces or eliminates any charge build up on the conductive bridge(s) during clamping in order that charge build up in “islands” (worn portions of the insulator layer of the main field area) do not affect the charge dissipation from the wafer substrate through the conductive bridges to ground.

Abstract: Described are electrostatic chuck devices that are useful to support a workpiece while processing the workpiece, upper ceramic layer components of electrostatic chuck assemblies, the upper ceramic layer having a deposited dielectric layer, a relatively smooth finish, or both, and related methods.

Abstract: Described are electrostatic chucks that are useful to support a workpiece during a step of processing the workpiece, the electrostatic chuck including embossments that are made of multiple deposited layers, the layers including diamond-like carbon layers and layers that contain silicon-based materials such as silicon carbide layers.

Abstract: Described are electrostatic chucks that are useful to support a workpiece during a step of processing the workpiece, and electrostatic chuck base components prepared by an additive manufacturing technique.

Abstract: Electrostatic chucks include multiple electrodes, each having a spiral shape surrounding a center of a surface of the electrostatic chuck, to provide a polyphase electrostatic chuck. Each electrode can be connected to a different phase of power. The spiral shapes can each avoid one another as well as avoiding holes or openings in the surface of the electrostatic chuck. The spiral shapes can be algorithmically determined using a processor. These electrostatic chucks can include three or more electrodes. Methods of manufacture of the electrostatic chucks include determining shapes for each of the electrodes and providing each of the electrodes.

Abstract: Described are electrostatic chucks that are useful to support a workpiece during a step of processing the workpiece, and electrostatic chuck base components prepared by an additive manufacturing technique.

Abstract: Electrostatic chucks include multiple electrodes, each having a spiral shape surrounding a center of a surface of the electrostatic chuck, to provide a polyphase electrostatic chuck. Each electrode can be connected to a different phase of power. The spiral shapes can each avoid one another as well as avoiding holes or openings in the surface of the electrostatic chuck. The spiral shapes can be algorithmically determined using a processor. These electrostatic chucks can include three or more electrodes. Methods of manufacture of the electrostatic chucks include determining shapes for each of the electrodes and providing each of the electrodes.

Abstract: Described are multi-layer electrostatic chucks used to secure and support a wafer substrate during wafer processing, and related methods, wherein the chuck includes a grounding structure that includes a grounding layer and a grounding pin.

Abstract: Described are electrostatic chucks that are useful to support a workpiece during a step of processing the workpiece, the electrostatic chuck including embossments that are made of multiple deposited layers, the layers including diamond-like carbon layers and layers that contain silicon-based materials such as silicon carbide layers.

Abstract: Described are electrostatic chucks designed for use in supporting a workpiece during a workpiece processing step, the electrostatic chuck including a gas flow system.

Abstract: Described are multi-layer electrostatic chucks used to secure and support a wafer substrate during wafer processing, and related methods, wherein the chuck includes a grounding structure that includes a grounding layer and a grounding pin.