Abstract: Provided a method and an apparatus for growing high-quality GaN bulk single crystals without causing cracks. The method of growing GaN bulk single crystals includes providing a susceptor in a reaction chamber, providing a seed-accommodating portion having a given depth on an upper surface of the susceptor, providing GaN seeds on a bottom surface of the seed-accommodating portion so that only an upper surface of the GaN seeds is exposed, growing GaN bulk single crystals on the GaN seeds; and cooling the grown GaN bulk single crystals and separating the GaN bulk single crystals from the seed-accommodating portion.

Abstract: A silicon film, crystalline film and method for manufacturing the same are provided. The silicon film and/or crystalline film may be an epitaxy-formed layer. A method for manufacturing a silicon film and/or crystalline film may include forming a insulating substrate, forming a buffer layer using a material selected from the group consisting of metals, compounds and/or oxides on the insulating substrate, crystallizing the buffer layer by annealing, and forming a crystalline and/or silicon film by epitaxy. Silicon and crystalline films manufactured by the method provided may have greater crystallinity, greater uniformity and/or higher charge carrier mobility.