Abstract: A microelectromechanical resonant switch (“resoswitch”) converts received radio frequency (RF) energy into a clock output. The resoswitch first accepts incoming amplitude- or frequency-shift keyed clock-modulated RF energy at a carrier frequency, filters it, provides power gain via resonant impact switching, and finally envelop detects impact impulses to demodulate and recover the carrier clock waveform. The resulting output derives from the clock signal that originally modulated the RF carrier, resulting in a local clock that shares its originator's accuracy. A bare push-pull 1-kHz RF-powered mechanical clock generator driving an on-chip inverter gate capacitance of 5 fF can potentially operate with only 5 pW of battery power, 200,000 times lower than a typical real-time clock. Using an off-chip inverter with 17.5 pF of effective capacitance, a 1-kHz push-pull resonator would consume 17.5 nW.

Abstract: A microelectromechanical resonant switch (“resoswitch”) converts received radio frequency (RF) energy into a clock output. The resoswitch first accepts incoming amplitude- or frequency-shift keyed clock-modulated RF energy at a carrier frequency, filters it, provides power gain via resonant impact switching, and finally envelop detects impact impulses to demodulate and recover the carrier clock waveform. The resulting output derives from the clock signal that originally modulated the RF carrier, resulting in a local clock that shares its originator's accuracy. A bare push-pull 1-kHz RF-powered mechanical clock generator driving an on-chip inverter gate capacitance of 5 fF can potentially operate with only 5 pW of battery power, 200,000 times lower than a typical real-time clock. Using an off-chip inverter with 17.5 pF of effective capacitance, a 1-kHz push-pull resonator would consume 17.5 nW.

Abstract: An acoustic resonator filter comprises a plurality of resonator structures. One or more of the plurality of resonator structures comprises a substrate having a first surface and a second surface. The resonator structure also comprises a piezoelectric layer disposed over the substrate. The acoustic wave resonator structure also comprises a layer disposed between the first surface of the substrate and the second surface of the piezoelectric layer. The layer has a first surface and a second surface. The layer and the piezoelectric layer have a combined thickness (H) selected so an anti-resonance (AR) condition exists for an undesired bulk vertical shear mode between the first surface of the piezoelectric layer and the second surface of the layer.

Abstract: An acoustic resonator filter comprises a plurality of resonator structures. One or more of the plurality of resonator structures comprises a substrate having a first surface and a second surface. The resonator structure also comprises a piezoelectric layer disposed over the substrate. The SAW resonator structure also comprises a layer disposed between the first surface of the substrate and the second surface of the piezoelectric layer. The layer has a first surface and a second surface. The layer and the piezoelectric layer have a combined thickness (H) selected so an anti-resonance (AR) condition exists for an undesired bulk vertical shear mode between the first surface of the piezoelectric layer and the second surface of the layer.