Abstract: In a method of forming and passivating device regions in III-V semiconductor substrates, a substrate surface is pretreated in a halogen-carbon plasma prior to depositing of insulating or passivating layers. Devices produced by pretreating the substrate surface have considerably better electrical values than devices fabricated without this pretreatment. In particular, devices fabricated with this pretreatment have a low reverse current (dark current).

Abstract: An apparatus is disclosed for the application of dielectric films to a surface according to the so-called PECVD (plasma enhanced chemical vapor deposition) process.By means of a shield (T) disposed in a simple parallel plate reactor, direct contact of the surfaces (PR) to be coated with the plasma, and thus damage to the resulting films due to the action of the plasma is avoided.If the shield is in a movable arrangement, it can be removed during the coating process or its position can be changed. It then becomes possible to apply layers alternatingly with the use of the shield, or in a time saving manner, in direct contact with the plasma.