Abstract: A communication device comprises a processing circuit having at least two modes, a sleep mode and an awake mode, a wireless communications circuit that can wirelessly send a message as to whether an alarm has been triggered, and a passive sensor, powered by audio signals impinging on the passive sensor, that provides at least an approximation of an audio signal to the processing circuit so as to cause the processing circuit to switch between the at least two modes. The communication device can be housed in a housing sized to fit into a battery compartment.

Abstract: A sensor element includes mechanical connectors adapted to couple to conventional battery electrical terminals to provide mechanical support for the sensor on a battery housing or device, at least one sensing element that is capable of emitting an electrical signal upon sensing an sensed environmental variable, and an electrical connector, distinct from the mechanical connectors for receiving power from, and sending signals to, the battery housing or device. The coupled unit can be used to provide powered sensing and communication capability. The coupled unit's outputs could be processed with user presence information.

Abstract: A communication device comprises a processing circuit having at least two modes, a sleep mode and an awake mode, a wireless communications circuit that can wirelessly send a message as to whether an alarm has been triggered, and a passive sensor, powered by audio signals impinging on the passive sensor, that provides at least an approximation of an audio signal to the processing circuit so as to cause the processing circuit to switch between the at least two modes. The communication device can be housed in a housing sized to fit into a battery compartment.

Abstract: An adjustable platform assembly attaches to a tree to provide a hunting dog perch or a seat for a hunter. The assembly includes a tree hugging subassembly having first and second padded tree engaging members connected together by a hinge, and strap fasteners connected to outer side edges of the tree engaging members for securing the assembly to a tree. A first frame member is attached to the tree hugging subassembly and is pivotally adjustable about a first axis that extends generally perpendicular to the tree and perpendicular to a first plane. A second frame member is attached to the first frame member and is adjustable about a second axis that extends generally parallel with the first plane. A platform attached to the second frame member can be adjusted to a desired horizontal orientation by adjusting the first and second frame members about the first and second axes.

Abstract: A communication device comprises a processing circuit having at least two modes, a sleep mode and an awake mode, a wireless communications circuit that can wirelessly send a message as to whether an alarm has been triggered, and a passive sensor, powered by audio signals impinging on the passive sensor, that provides at least an approximation of an audio signal to the processing circuit so as to cause the processing circuit to switch between the at least two modes. The communication device can be housed in a housing sized to fit into a battery compartment.

Abstract: A dog step attachment attaches to a receiver hitch of a pickup truck to provide an intermediate step for assisting a dog in jumping into the bed of the pickup truck. The attachment includes a first frame member received in the receiver hitch, a second frame member pivotally connected to a rearward end of the first frame member, a third frame member connected to the second frame member, and a platform attached to and supported by the third frame member. The second frame member is movable relative to the first frame member between a folded down position for use as a dog step and a folded up position for transport. Springs are used to hold the second frame member in over-center conditions in the folded down and folded up positions. Adjustments are provided for accommodating different heights of receiver hitches and pickup beds.

Abstract: A semiconductor device comprising a substrate having a transistor that includes a metal gate structure; a first oxide layer formed over the substrate; a silane layer formed on the first oxide layer; and a non-conductive metal oxide layer grown on the metal gate structure, wherein the silane layer inhibits nucleation and growth of the non-conductive metal oxide layer.

Abstract: An adjustable platform assembly attaches to a tree to provide a hunting dog perch or a seat for a hunter. The assembly includes a tree hugging subassembly having first and second padded tree engaging members connected together by a hinge, and strap fasteners connected to outer side edges of the tree engaging members for securing the assembly to a tree. A first frame member is attached to the tree hugging subassembly and is pivotally adjustable about a first axis that extends generally perpendicular to the tree and perpendicular to a first plane. A second frame member is attached to the first frame member and is adjustable about a second axis that extends generally parallel with the first plane. A platform attached to the second frame member can be adjusted to a desired horizontal orientation by adjusting the first and second frame members about the first and second axes.

Abstract: A semiconductor device comprising a substrate having a transistor that includes a metal gate structure; a first oxide layer formed over the substrate; a silane layer formed on the first oxide layer; and a non-conductive metal oxide layer grown on the metal gate structure, wherein the silane layer inhibits nucleation and growth of the non-conductive metal oxide layer.

Abstract: A semiconductor device comprising a substrate having a transistor that includes a metal gate structure; a first oxide layer formed over the substrate; a silane layer formed on the first oxide layer; and a non-conductive metal oxide layer grown on the metal gate structure, wherein the silane layer inhibits nucleation and growth of the non-conductive metal oxide layer.

Abstract: A semiconductor device comprising a substrate having a transistor that includes a metal gate structure; a first oxide layer formed over the substrate; a silane layer formed on the first oxide layer; and a non-conductive metal oxide layer grown on the metal gate structure, wherein the silane layer inhibits nucleation and growth of the non-conductive metal oxide layer.

Abstract: A semiconductor device comprising a substrate having a transistor that includes a metal gate structure; a first oxide layer formed over the substrate; a silane layer formed on the first oxide layer; and a non-conductive metal oxide layer grown on the metal gate structure, wherein the silane layer inhibits nucleation and growth of the non-conductive metal oxide layer.

Abstract: Embodiments of the invention provide a method to form a high-k dielectric layer on a group III-V substrate with substantially no oxide of the group III-V substrate between the substrate and high-k dielectric layer. Oxide may be removed from the substrate. An organometallic compound may form a capping layer on the substrate from which the oxide was removed. The high-k dielectric layer may then be formed, resulting in a thin transition layer between the substrate and high-k dielectric layer and substantially no oxide of the group III-V substrate between the substrate and high-k dielectric layer.

Abstract: A semiconductor device comprising a substrate having a transistor that includes a metal gate structure; a first oxide layer formed over the substrate; a silane layer formed on the first oxide layer; and a non-conductive metal oxide layer grown on the metal gate structure, wherein the silane layer inhibits nucleation and growth of the non-conductive metal oxide layer.

Abstract: A nanotube transistor, such as a carbon nanotube transistor, may be formed with a top gate electrode and a spaced source and drain. Conduction along the transistor from source to drain is controlled by the gate electrode. Underlying the gate electrode are at least two nanotubes. In some embodiments, the substrate may act as a back gate.

Abstract: Embodiments of the invention provide a method to form a high-k dielectric layer on a group III-V substrate with substantially no oxide of the group III-V substrate between the substrate and high-k dielectric layer. Oxide may be removed from the substrate. An organometallic compound may form a capping layer on the substrate from which the oxide was removed. The high-k dielectric layer may then be formed, resulting in a thin transition layer between the substrate and high-k dielectric layer and substantially no oxide of the group III-V substrate between the substrate and high-k dielectric layer.

Abstract: Methods and associated structures of forming a microelectronic device are described. Those methods may include forming an opening in a substrate, placing at least one multi-walled CNT within the opening, and forming a carbide layer on the at least one multi-walled CNT.

Abstract: A Group III-V Semiconductor device and method of fabrication is described. A high-k dielectric is interfaced to a confinement region by a chalcogenide region.

Abstract: Disclosed herein is a vacuum cleaner having a housing defining a blower port, an exhaust port, and a flow path between the blower port and the exhaust port. The vacuum cleaner also includes a removable cap assembly for the blower port to direct discharge airflow via the flow path to the exhaust port. The removable cap assembly, in turn, includes a cap head that engages the blower port to close the blower port, a cap body coupled to the cap head and inserted in the flow path, the cap body comprising a frame through which the discharge airflow passes, and a sound-influencing material supported by the frame within the flow path to reduce noise effected by the discharge airflow. The sound-influencing material may include a reticulated foam roll disposed in the frame to diffuse the discharge airflow.

Abstract: A nanotube transistor, such as a carbon nanotube transistor, may be formed with a top gate electrode and a spaced source and drain. Conduction along the transistor from source to drain is controlled by the gate electrode. Underlying the gate electrode are at least two nanotubes. In some embodiments, the substrate may act as a back gate.