Patents by Inventor James A. Fair
James A. Fair has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20070046422Abstract: An electrical control system.Type: ApplicationFiled: January 13, 2006Publication date: March 1, 2007Applicant: Cooper Technologies CompanyInventors: James Fair, Mariusz Malkowski, Rahul Goyal
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Publication number: 20070046491Abstract: An electrical control system.Type: ApplicationFiled: January 13, 2006Publication date: March 1, 2007Applicant: Cooper Technologies CompanyInventors: James Fair, Mariusz Malkowski, Rahul Goyal
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Patent number: 7176140Abstract: Methods and apparatus for cleaning a semiconductor substrate that significantly reduce the number of particles falling onto the substrate during cleaning by coating all interior surfaces within a processing chamber with an adhesion film that has an increased sticking coefficient for any subsequently arriving etched species to promote a continuous film growth and improve adhesion of such etched species. Due to its increased sticking coefficient, this adhesion film reduces surface mobility of any arriving by-products to enable the growth of the continuous film of etched species. The continuous film of etched species adheres firmly to the adhesion film such that the etched species are prevented from flaking off and falling onto the substrate being cleaned. The methods and apparatus may clean a plurality of semiconductor substrates, whereby a plurality of adhesion films are sequentially deposited over a plurality of continuous film growths of removed materials for cleaning the substrates.Type: GrantFiled: July 9, 2004Date of Patent: February 13, 2007Assignee: Novellus Systems, Inc.Inventors: Michael Rivkin, James A Fair
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Patent number: 7157798Abstract: A method for creating a refractory metal and refractory metal nitride cap effective for reducing copper electromigration and copper diffusion is described. The method includes depositing a refractory metal nucleation layer and nitriding at least the upper portion of the refractory metal layer to form a refractory metal nitride. Methods to reduce and clean the copper lines before refractory metal deposition are also described. Methods to form a thicker refractory metal layer using bulk deposition are also described.Type: GrantFiled: November 8, 2004Date of Patent: January 2, 2007Assignee: Novellus Systems, Inc.Inventors: James A. Fair, Robert H. Havemann, Jungwan Sung, Nerissa Taylor, Sang-Hyeob Lee, Mary Anne Plano
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Patent number: 7144806Abstract: An ALD method deposits conformal tantalum-containing material layers on small features of a substrate surface. The method includes the following principal operations: depositing a thin conformal and saturated layer of tantalum-containing precursor over some or all of the substrate surface; using an inert gas or hydrogen plasma to purge the halogen byproducts and unused reactants; reducing the precursor to convert it to a conformal layer of tantalum or tantalum-containing material; using another purge of inert gas or hydrogen plasma to remove the halogen byproducts and unused reactants; and repeating the deposition/reduction cycles until a desired tantalum-containing material layer is achieved. An optional step of treating each newly formed surface of tantalum containing material with a nitrogen-containing agent can be added to create varying amounts of tantalum nitride.Type: GrantFiled: October 23, 2002Date of Patent: December 5, 2006Assignee: Novellus Systems, Inc.Inventors: James A. Fair, Jungwan Sung, Nerissa Taylor
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Publication number: 20060250352Abstract: Three implementations of a novel method for improved cursor functionality are described: “Instant Navigator”, “Grid”, and “Phantom Cursor”. In “Instant Navigator”, two menu bars are generated for fast and easy access to various applications and actions within a certain application. In “Grid”, cursor moves along a grid line, e.g. only along the vertical and the horizontal directions. In “Phantom Cursor”, objects surrounding the system cursor are selected and highlighted as if there is a second cursor. These inventions will increase the speed of computation and execution greatly. Another implementation of a novel method for generating tagged windows mouse messages is described herein. Such tagged windows mouse messages are coupled with a cursor rendering application to generate second, third, or more independent cursors or control points.Type: ApplicationFiled: May 5, 2005Publication date: November 9, 2006Applicant: Mice Technoligies, Inc.Inventors: James Fairs, Vlad Zarney
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Patent number: 7107998Abstract: Carbon monoxide gas is provided in a ruthenium-deposition apparatus to clean undesired ruthenium-containing deposits from apparatus surfaces. Carbon monoxide gas is mixed with reactant gases in apparatus tubing and in a ruthenium-deposition reaction chamber to inhibit formation of undesired ruthenium deposits on apparatus surfaces and to remove ruthenium deposits.Type: GrantFiled: October 16, 2003Date of Patent: September 19, 2006Assignee: Novellus Systems, Inc.Inventors: Harold F. R. Greer, James A. Fair, Junghwan Sung, Nerissa Sue Draeger
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Publication number: 20060094238Abstract: Methods for depositing a tungsten nitride layer are described. The methods form a tungsten nitride layer using a carefully controlled deposition technique such as pulsed nucleation layer (PNL). Initially, a tungsten layer is formed on a substrate surface. The tungsten layer is then exposed to a nitriding agent to form a tungsten nitride layer. Methods of forming relatively thick layers of involve repeated cycles of contact with reducing agent, tungsten precursor and nitriding agent. In some cases, the cycle may also include contact with a dopant precursor such as phosphine or arsine.Type: ApplicationFiled: December 16, 2005Publication date: May 4, 2006Inventors: Karl Levy, Junghwan Sung, Kaihan Ashtiani, James Fair, Joshua Collins, Juwen Gao
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Publication number: 20060066571Abstract: Improved computer interface system using multiple independent graphical data input devices is disclosed. Multiple independent graphical data input devices allow users to input data independently from multiple independent graphical data input devices to operating system. Graphical input device driver decodes input from multiple independent graphical input devices. Operating system interface software interprets data from graphical input device driver. Operating system software further generates and controls multiple cursors or control points. Graphical input device aware program obtains and interprets graphical input devices event message, and controls graphical input device aware objects.Type: ApplicationFiled: November 30, 2004Publication date: March 30, 2006Applicant: Mice Technologies, Inc.Inventors: James Fairs, Vlad Zarney, Daniel Schaaf
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Patent number: 7014709Abstract: A CVD method deposits conformal metal layers on small features of a substrate surface. The method includes three principal operations: depositing a thin conformal layer of precursor over some or all of the substrate surface; oxidizing the precursor to convert it to a conformal layer of metal oxide; and reducing some or all of the metal oxide to convert it to a conformal layer of the metal itself. The conformal layer of precursor may form a “monolayer” on the substrate surface. Examples of metals for deposition include copper, cobalt, ruthenium, indium, and rhodium.Type: GrantFiled: May 3, 2004Date of Patent: March 21, 2006Assignee: Novellus Systems, Inc.Inventor: James A. Fair
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Patent number: 7005372Abstract: Methods for depositing a tungsten nitride layer are described. The methods form a tungsten nitride layer using a carefully controlled deposition technique such as pulsed nucleation layer (PNL). Initially, a tungsten layer is formed on a substrate surface. The tungsten layer is then exposed to a nitriding agent to form a tungsten nitride layer. Methods of forming relatively thick layers of involve repeated cycles of contact with reducing agent, tungsten precursor and nitriding agent. In some cases, the cycle may also include contact with a dopant precursor such as phosphine or arsine.Type: GrantFiled: October 20, 2003Date of Patent: February 28, 2006Assignee: Novellus Systems, Inc.Inventors: Karl B. Levy, Junghwan Sung, Kaihan A. Ashtiani, James A. Fair, Joshua Collins, Juwen Gao
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Publication number: 20050279622Abstract: Improved HETP is obtained in the operation of a distillation column containing trays with a packing of a porous container containing a particulate material intimately associated with a resilient component having at least 50 volume % open space, preferably at least 70 volume % positioned on the trays compared to the trays without the packing. The packing may contain a catalytic particulate material and the distillation may involve reaction and distillation of the reaction products. The particulate material may also be inert and the distillation of the conventional type to separate components in the distillation mixture without reaction.Type: ApplicationFiled: August 19, 2005Publication date: December 22, 2005Inventors: Lawrence Smith, Gary Gildert, James Fair, A. Seibert
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Patent number: 6905543Abstract: The nucleation delay in the formation of a tungsten layer on a substrate is reduced or eliminated by alternative processes. In one process the substrate is exposed to atomic hydrogen before the tungsten nucleation layer is formed. In the other process the substrate is exposed to a boron hydride such as diborane (B2H6) before the nucleation layer is formed. The process works effectively to reduce or eliminate the tungsten nucleation delay on a variety of surfaces, including silicon, silicon dioxide, silicon nitride and titanium nitride.Type: GrantFiled: June 19, 2002Date of Patent: June 14, 2005Assignee: Novellus Systems, IncInventors: James A. Fair, Nerissa Taylor, Junghwan Sung
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Publication number: 20050081882Abstract: Carbon monoxide gas is provided in a ruthenium-deposition apparatus to clean undesired ruthenium-containing deposits from apparatus surfaces. Carbon monoxide gas is mixed with reactant gases in apparatus tubing and in a ruthenium-deposition reaction chamber to inhibit formation of undesired ruthenium deposits on apparatus surfaces and to remove ruthenium deposits.Type: ApplicationFiled: October 16, 2003Publication date: April 21, 2005Applicant: Novellus Systems, Inc.Inventors: Harold Greer, James Fair, Junghwan Sung, Nerissa Draeger
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Patent number: 6849122Abstract: A CVD method deposits conformal metal layers on small features of a substrate surface. The method includes three principal operations: depositing a thin conformal layer of precursor over some or all of the substrate surface; oxidizing the precursor to convert it to a conformal layer of metal oxide; and reducing some or all of the metal oxide to convert it to a conformal layer of the metal itself. The conformal layer of precursor may form a “monolayer” on the substrate surface. Examples of metals for deposition include copper, cobalt, ruthenium, indium, and rhodium.Type: GrantFiled: March 7, 2002Date of Patent: February 1, 2005Assignee: Novellus Systems, Inc.Inventor: James A. Fair
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Patent number: 6844258Abstract: A method for creating a refractory metal and refractory metal nitride cap effective for reducing copper electromigration and copper diffusion is described. The method includes depositing a refractory metal nucleation layer and nitriding at least the upper portion of the refractory metal layer to form a refractory metal nitride. Methods to reduce and clean the copper lines before refractory metal deposition are also described. Methods to form a thicker refractory metal layer using bulk deposition are also described.Type: GrantFiled: May 9, 2003Date of Patent: January 18, 2005Assignee: Novellus Systems, Inc.Inventors: James A. Fair, Robert H. Havemann, Jungwan Sung, Nerissa Taylor, Sang-Hyeob Lee, Mary Anne Plano
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Publication number: 20040142557Abstract: Methods for depositing a tungsten nitride layer are described. The methods form a tungsten nitride layer using a carefully controlled deposition technique such as pulsed nucleation layer (PNL). Initially, a tungsten layer is formed on a substrate surface. The tungsten layer is then exposed to a nitriding agent to form a tungsten nitride layer. Methods of forming relatively thick layers of involve repeated cycles of contact with reducing agent, tungsten precursor and nitriding agent. In some cases, the cycle may also include contact with a dopant precursor such as phosphine or arsine.Type: ApplicationFiled: October 20, 2003Publication date: July 22, 2004Applicant: Novellus Systems, Inc.Inventors: Karl B. Levy, Junghwan Sung, Kaihan A. Ashtiani, James A. Fair, Joshua Collins, Juwen Gao
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Patent number: 6720260Abstract: Ion-induced, UV-induced, and electron-induced sequential chemical vapor deposition (CVD) processes are disclosed where an ion flux, a flux of ultra-violet radiation, or an electron flux, respectively, is used to induce the chemical reaction in the process. The process for depositing a thin film on a substrate includes introducing a flow of a first reactant gas in vapor phase into a process chamber where the gas forms an adsorbed saturated layer on the substrate and exposing the substrate to a flux of ions, a flux of ultra-violet radiation, or a flux of electrons for inducing a chemical reaction of the adsorbed layer of the first reactant gas to form the thin film. A second reactant gas can be used to form a compound thin film. The ion-induced, UV-induced, and electron-induced sequential CVD process of the present invention can be repeated to form a thin film of the desired thickness.Type: GrantFiled: June 20, 2003Date of Patent: April 13, 2004Assignee: Novellus Systems, Inc.Inventors: James A. Fair, Nerissa Taylor
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Patent number: 6627268Abstract: Ion-induced, UV-induced, and electron-induced sequential chemical vapor deposition (CVD) processes are disclosed where an ion flux, a flux of ultra-violet radiation, or an electron flux, respectively, is used to induce the chemical reaction in the process. The process for depositing a thin film on a substrate includes introducing a flow of a first reactant gas in vapor phase into a process chamber where the gas forms an adsorbed saturated layer on the substrate and exposing the substrate to a flux of ions, a flux of ultra-violet radiation, or a flux of electrons for inducing a chemical reaction of the adsorbed layer of the first reactant gas to form the thin film. A second reactant gas can be used to form a compound thin film. The ion-induced, UV-induced, and electron-induced sequential CVD process of the present invention can be repeated to form a thin film of the desired thickness.Type: GrantFiled: May 3, 2001Date of Patent: September 30, 2003Assignee: Novellus Systems, Inc.Inventors: James A. Fair, Wilbert van den Hoek, Nerissa Taylor
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Patent number: 6464779Abstract: This invention pertains to systems and methods for atomic layer chemical vapor deposition. More specifically, the invention pertains to methods for copper atomic layer chemical vapor deposition, particularly to deposit a seed layer prior to the electrochemical Cu fill operation in integrated circuit fabrication. It also pertains to apparatus modules for performing such deposition.Type: GrantFiled: January 19, 2001Date of Patent: October 15, 2002Assignee: Novellus Systems, Inc.Inventors: Ronald A. Powell, James A. Fair