Abstract: An interband cascade (IC) light emitting device comprising a plurality of interband cascade stages, wherein at least one of the IC stages is constructed to have an electron injector made of one or more QWs, a type-I quantum well (QW) active region, a barrier layer positioned between the active region and the electron injector, a hole injector made of one or more QWs, and a barrier layer positioned between the active region and the hole injector. In at least one embodiment, a type II heterointerface layer is between the electron injector and an adjacent hole injector. The well layer of the type-I QW active region has compressive strain, while the barrier layers which flank the type-I QW active region comprise tensile strain layers. In certain embodiments, the electron injector and the hole injector comprise tensile strained layers.

Abstract: An interband cascade (IC) light emitting device comprising a plurality of interband cascade stages, wherein at least one of the IC stages is constructed to have an electron injector made of one or more QWs, a type-I quantum well (QW) active region, a barrier layer positioned between the active region and the electron injector, a hole injector made of one or more QWs, and a barrier layer positioned between the active region and the hole injector. In at least one embodiment, a type II heterointerface layer is between the electron injector and an adjacent hole injector. The well layer of the type-I QW active region has compressive strain, while the barrier layers which flank the type-I QW active region comprise tensile strain layers. In certain embodiments, the electron injector and the hole injector comprise tensile strained layers.