Patents by Inventor James A. Loughran

James A. Loughran has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10246831
    Abstract: A synthetic ice panel system for use on a ground surface includes plurality of substantially flat panels that mutually interlock to form a rink, such as for ice skating. Each panel includes a top surface, a bottom surface adapted for resting on the ground surface, and a peripheral edge. The peripheral edge includes a plurality of interlocking tabs and recesses operative to mutually interlock with adjacent panels. Each panel is preferably made with a high-density polymer infused with a lubricant. As such, ice skates and the like are able to slide with relatively low friction on the top surface of the panel. Weather permitting; the panels may be inverted in some embodiments wherein the bottom surface of each panel includes a cooling channel containing a cooling tube through which a coolant flows to freeze water resting on the panel, thereby forming a layer of ice above the panel.
    Type: Grant
    Filed: June 13, 2017
    Date of Patent: April 2, 2019
    Inventor: James Loughran
  • Patent number: 5137551
    Abstract: A method and apparatus for separating surfactant depleted liquid from an at least partially stable foamed aqueous admixture of water, surfactant and air includes introducing the at least partially stable foamed admixture to a channel of preselected height, length, width and inclination at such a flow rate as the foamed admixture passes through the channel. A substantially translational motion of the foamed admixture is maintained through the bulk of the channel. As the foamed admixture translates through the channel, surfactant depleted liquid drains from the interstices thereof. The air content of the foamed admixture does not increase above the air content at which substantial overdrying begins to occur in the foamed admixture. Tranquil interface flow conditions are maintained in the flow of surfactant depleted liquid drained from the foamed admixture for so long as it is in contact with the admixture.
    Type: Grant
    Filed: December 23, 1991
    Date of Patent: August 11, 1992
    Assignee: James River Corporation of Virginia
    Inventors: Frederick Ahrens, James Loughran, James Benson
  • Patent number: 4803450
    Abstract: Multilayer circuit boards composed primarily of silicon and containing buried ground planes and buried conducting runs are fabricated in one embodiment by positioning conductive patterns (12) on the surfaces of silicon substrates and melting a solder component of the conductive patterns (12) and allowing it to flow together with solder from the conductive patterns (12) on a stacked, adjacent silicon substrate (10). When the solder cools, a single conductive pathway (18) exists between adjacent silicon substrates (10) and bonds the adjacent substrates. If the substrates are coated with SiO.sub.2 (20), a multilayer structure with buried microwave strip lines (22) is formed in the bonding process. Alternatively, highly resistive silicon substrates (26) are used as a dielectric for microwave strip lines (24) on a top surface thereof and a conductive sheet (28) on the bottom surface thereof acts as a ground plane for microwave energy propagating along strip line (24).
    Type: Grant
    Filed: December 14, 1987
    Date of Patent: February 7, 1989
    Assignee: General Electric Company
    Inventors: James F. Burgess, Homer H. Glascock, II, Harold F. Webster, Constantine A. Neugebauer, James A. Loughran
  • Patent number: 4764485
    Abstract: A method for producing a hole in a polymer film includes the steps of depositing a conductive layer onto the polymer film and irradiating a spot on the layer with a burst of focused laser energy at a level sufficient to form an opening in the film and, subsequently, plasma etching the film so as to form a hole of desired depth in the polymer film underlying the opening in the conductive layer. This method is particularly applicable to the formation of multichip intergrated circuit packages in which a plurality of chips formed in a semiconductor wafer are coated with a polymer film covering the chips and the substrates. The holes are provided for the purpose of interconnecting selected chip contact pads via a deposited conductive layer which overlies the film and fills the holes.
    Type: Grant
    Filed: January 5, 1987
    Date of Patent: August 16, 1988
    Assignee: General Electric Company
    Inventors: James A. Loughran, James G. McMullen, Alexander J. Yerman
  • Patent number: 4750666
    Abstract: A method for depositing gold bumps on metallized pads of semiconductor chips uses a commercially available thermocompression or thermosonic gold wire bonder. The method includes the steps of depositing a gold ball with an attached wire on the metallized pad, and removing the wire so that a gold bump remains on the pad.
    Type: Grant
    Filed: April 17, 1986
    Date of Patent: June 14, 1988
    Assignee: General Electric Company
    Inventors: Constantine A. Neugebauer, James A. Loughran
  • Patent number: 4720308
    Abstract: A semiconductor device and a method for its preparation are disclosed, wherein a body of semiconducting material has at least one bore extending completely therethrough, this bore having a substantially constant diameter of less than about 1.5 mils and an average length-to-diameter ratio of at least about 6:1, this bore being defined by a region of the semiconducting material in the recrystallized state having therein throughout the region a substantially constant uniform concentration level of atoms of at least one metal selected from the group consisting of aluminum, indium, gallium, antimony, gold, silver and tin in addition to the initial content of the semiconducting material.
    Type: Grant
    Filed: March 24, 1986
    Date of Patent: January 19, 1988
    Assignee: General Electric Company
    Inventors: Thomas R. Anthony, Douglas E. Houston, James A. Loughran
  • Patent number: 4716124
    Abstract: Power semiconductor devices are manufactured using a flexible metal tape carrier to facilitate automation of the manufacturing process. Control leads are fashioned from portions of the tape carrier, with a main portion of the tape carrier serving as a main current lead. The manufacturing process permits thorough electrical testing of a power semiconductor chip prior to incorporation into a relatively expensive power device package. In particular, the power chip can be tested at full-rated current, at least where the current is pulsed at a low duty cycle.
    Type: Grant
    Filed: August 20, 1986
    Date of Patent: December 29, 1987
    Assignee: General Electric Company
    Inventors: Alexander J. Yerman, James A. Loughran
  • Patent number: 4635092
    Abstract: Power semiconductor devices are manufactured using a flexible metal tape carrier to facilitate automation of the manufacturing process. Control leads are fashioned from portions of the tape carrier, with a main portion of the tape carrier serving as a main current lead. The manufacturing process permits thorough electrical testing of a power semiconductor chip prior to incorporation into a relatively expensive power device package. In particular, the power chip can be tested at full-rated current, at least where the current is pulsed at a low duty cycle.
    Type: Grant
    Filed: June 4, 1984
    Date of Patent: January 6, 1987
    Assignee: General Electric Company
    Inventors: Alexander J. Yerman, James A. Loughran
  • Patent number: 4595428
    Abstract: A semiconductor device and a method for its preparation are disclosed, wherein a body of semiconducting material has at least one bore extending completely therethrough, this bore having a substantially constant diameter of less than about 1.5 mils and an average length-to-diameter ratio of at least about 6:1, this bore being defined by a region of the semiconducting material in the recrystallized state having therein throughout the region a substantially constant uniform concentration level of atoms of at least one metal selected from the group consisting of aluminum, indium, gallium, antimony, gold, silver and tin in addition to the initial content of the semiconducting material.
    Type: Grant
    Filed: January 3, 1984
    Date of Patent: June 17, 1986
    Assignee: General Electric Company
    Inventors: Thomas R. Anthony, Douglas E. Houston, James A. Loughran
  • Patent number: 4570173
    Abstract: A semiconductor device and a method for its preparation are disclosed, wherein a semiconductor body has at least one bore extending completely or partially therethrough, this bore being defined by a semiconducting region having a conductivity type opposite to, and resistivity lower than, the material of the body contiguous to the bore-defining semiconducting region, this bore having a substantially constant diameter of less than about 1.5 mils and an average length-to-diameter ratio of at least about 6:1.
    Type: Grant
    Filed: October 24, 1983
    Date of Patent: February 11, 1986
    Assignee: General Electric Company
    Inventors: Thomas R. Anthony, Douglas E. Houston, James A. Loughran
  • Patent number: 4541035
    Abstract: A silicon circuit board incorporates multiple levels of patterned conductors. First level upper and lower patterned conductors are situated on an insulation-coated, monocrystalline silicon substrate. Upper and lower, high resistivity, polycrystalline silicon layers, in turn, are situated on the first level upper and lower patterned conductors, respectively. Second level upper and lower patterned conductors are situated over the upper and lower polycrystalline silicon layers. Further levels of patterned conductors in the circuit board may be provided by iteratively forming on the board polycrystalline silicon layers and patterned conductors. Conducting feedthroughs in the circuit board provide electrical communication between various patterened conductors.
    Type: Grant
    Filed: July 30, 1984
    Date of Patent: September 10, 1985
    Assignee: General Electric Company
    Inventors: Richard O. Carlson, Homer H. Glascock, II, James A. Loughran, Harold F. Webster
  • Patent number: 4527183
    Abstract: A semiconductor device for the detection of radiation in general and X-radiation and infrared radiation in particular is provided.
    Type: Grant
    Filed: July 10, 1981
    Date of Patent: July 2, 1985
    Assignee: General Electric Company
    Inventors: Thomas R. Anthony, Douglas E. Houston, James A. Loughran
  • Patent number: 4204628
    Abstract: An improved method for thermo-compression diffusion bonding allows bonding of a compliant metallic member to a second metallic member which may have surface irregularities. Opposite surfaces of the compliant metallic member are contacted by a layer of compactible material and by the second metallic member, respectively, such that distribution of a loading force applied to this assembly conforms the compliant member to the irregularities in the surface contour of the second metallic member. Thus, a uniform substantially void-free diffusion bond between the two metallic members is achieved.
    Type: Grant
    Filed: July 24, 1978
    Date of Patent: May 27, 1980
    Assignee: General Electric Company
    Inventors: Douglas E. Houston, James A. Loughran
  • Patent number: 4129243
    Abstract: Disclosed is a double side cooled, pressure mounted semiconductor package and a method for the manufacture thereof. The package is formed by directly bonding upper and lower metal contact assemblies to an annular ceramic housing. Assembly is simplified if at least one contact assembly comprises two parts applied sequentially. An annular flange having a central opening approximately the size of the central opening in the annular housing and having an outside diameter larger than the outside diameter of the ceramic housing is direct bonded to one end of the housing simultaneously with a lower semiconductor contact. After a conventional semiconductor pellet is positioned in the housing, the second part, a metal contact disc with an outside diameter approximately equaling the outside diameter of the flange, is positioned thereover. Finally, the flange and the disc are welded around their peripheries.
    Type: Grant
    Filed: June 17, 1976
    Date of Patent: December 12, 1978
    Assignee: General Electric Company
    Inventors: Dominic A. Cusano, James A. Loughran, Yen S. E. Sun
  • Patent number: 3994430
    Abstract: Disclosed is a method of bonding metals to substrates such as ceramics or metals. A bonding agent forms a eutectic alloy with the metal to provide bonding. Several methods of supplying the bonding agent to the system are disclosed. However, regardless of which method of introducing the bonding agent into the system is employed, the quantity of the bonding agent is carefully controlled so that the compound in the region of the bond is hypoeutectic. To form the bond, the metal and the substrate are placed adjacent each other and the bonding agent is introduced into the system. The system is then heated to a temperature between the eutectic temperature and the melting point of the metal for a preselected time. The system is then cooled to form a bond. The heating is carried out in an inert atmosphere or a vacuum.
    Type: Grant
    Filed: July 30, 1975
    Date of Patent: November 30, 1976
    Assignee: General Electric Company
    Inventors: Dominic A. Cusano, James A. Loughran, Yen Sheng Edmund Sun