Abstract: A method and apparatus for monitoring and controlling reactant vapors prior to chemical vapor deposition (CVD). The reactant vapors are monitored at full concentration without sampling as they are transported to a CVD reactor. Contaminants detected cause a process controller to switch the transport path to direct reactant vapors to a system pump.

Abstract: Apparatus for plasma processing involving the gettering of particles having a high charge to mass ratio away from a semiconductor wafer are disclosed. In one aspect of the invention, magnets are used to produce a magnetic field which is transverse to an electric field to draw the negative particles away from the wafer to prevent the formation of a sheath which can trap the particles. In a second aspect of the invention, a power source is connected to the wafer electrode to maintain a negative charge on the wafer, thereby preventing negative particles from being drawn to the wafer surface when the plasma is turned off. In other embodiments of the invention, a low density plasma source is used to produce a large plasma sheath which permits particles to cross a chamber to be gettered. A low density plasma discharge followed by a pulse to a higher density is used to overcome the negative effect of an insulating layer between the wafer and the wafer electrode.

Abstract: An apparatus and method for determining the time at which a plasma etching process should be terminated. The process generates at least one etch product species and a continuum plasma emission. The apparatus monitors the optical emission intensity of the plasma in a narrow band centered about a predetermined spectral line and generates a first signal indicative of the spectral intensity of the etch product species. The apparatus further monitors the optical emission intensity of the plasma in a wide band and generates a second signal indicative of the spectral intensity of the continuum plasma emission. The apparatus further monitors the magnitudes of the first and second signals and generates a termination signal when the magnitudes diverge.

Abstract: A CHF.sub.3 -based RIE etching process is disclosed using a nitrogen additive to provide high selectivity of SiO.sub.2 or PSG to Al.sub.2 O.sub.3, low chamfering of a photoresist mask, and low RIE lag. The process uses a pressure in the range of about 200-1,000 mTorr, and an appropriate RF bias power, selected based on the size of the substrate being etched. The substrate mounting pedestal is preferably maintained at a temperature of about 0.degree. C. Nitrogen can be provided from a nitrogen-containing molecule, or as N.sub.2. He gas can be added to the gas mixture to enhance the RIE lag-reducing effect of the nitrogen.

Abstract: An infrared television camera (20) monitors the etching of a substrate (26) in-situ in an etch chamber (24). Temporal and spatial resolution of IR emissions is obtained by monitoring the top surface of the substrate (26) in two-dimensions throughout the course of the etching process. Anomalies in temperature detected on the top surface of the substrate (26) can indicate defects in the substrate (26) itself or in the operation of the etching apparatus. Process feedback control is achieved by adjusting various parameters of the etching apparatus (i.e., gas-pressure, flow pattern, magnetic field, coolant flow to electrode, or the like) to compensate for etching anomalies. Etch uniformity and etch endpoint monitoring is achieved by monitoring the IR emissions resulting from exothermic reaction of the film being etched. IR emissions decline at the end of an exothermic etch reaction.

Abstract: A fishing rod apparatus is arranged with a first and second rod tube reciprocatably mounting a plunger therethrough. The second rod tube selectively utilizes spring or pneumatic pressure to direct the rod exteriorly through a forward end portion of the first tube. The forward end portion of the first tube is arranged to position a fishing line support such as a float to direct the associated fishing line to a desired target casting position relative to the rod structure.

Abstract: A process for inducing photochemical reactions using laser radiation employs a dielectric waveguide cell formed by a capillary passage communicating at its ends with a gas inlet chamber and a gas outlet chamber, each chamber being configured to encompass a cone of laser radiation focussed onto, or diverging from, the respective end of the capillary passage. The passage is configured to propagate the laser radiation therealong in one or more selected waveguide modes, thus defining an extended region of high fluence.

Abstract: A process for inducing photochemical reactions using laser radiation employs a dielectric waveguide cell formed by a capillary passage communicating at its ends with a gas inlet chamber and a gas outlet chamber, each chamber being configured to encompass a cone of laser radiation focussed onto, or diverging from, the respective end of the capillary passage. The passage is configured to propagate the laser radiation therealong in one or more selected waveguide modes, thus defining an extended region of high fluence.

Abstract: A method is described and claimed for the replenishment of deuterium or tritium concentration in a laser isotope separation process for the production of D.sub.2 O, or for the recovery of tritium from contaminated D.sub.2 O or H.sub.2 O. A working compound is selectively photodissociated by a laser beam and is replenished by contacting an exchange liquid in a countercurrent fashion in a first contacting column. The exchange liquid is replenished with isotope by in turn being contacted with a feed stream in a second contacting apparatus. This second contacting apparatus may be a gas/liquid or liquid/liquid contacting apparatus and the countercurrent flows therein may be about equal or unequal.