Patents by Inventor James A Rand

James A Rand has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140014169
    Abstract: Semiconductor nanostrings, mats containing semiconductor nanostrings, and devices and modules, such as, solar energy generating modules, including semiconductor nanostrings or mats containing semiconductor nanostrings are described herein. Methods for making multi-layer nanostrings and mats and other devices including multi-layer nanostrings are also described.
    Type: Application
    Filed: July 15, 2013
    Publication date: January 16, 2014
    Inventors: James A. RAND, Scott MORRISON, John BLUM
  • Patent number: 7975833
    Abstract: A material handling system for moving material from a storage device to a receiver comprises a counter rotating double screw feeder extending from the storage device to the receiver. The counter rotating double screw feeder comprises an outer screw feed member; an inner screw feed member; where the outer screw feed member being positioned in an outer screw feed member tube; and the inner screw feed member being positioned in an inner screw feed member tube. The material is feed from the storage device to the process tube via the outer screw feed member; the inner screw feed member removes gas and byproducts from the receiver.
    Type: Grant
    Filed: July 15, 2008
    Date of Patent: July 12, 2011
    Assignee: General Electric Company
    Inventors: Ralf Jonczyk, James A Rand
  • Publication number: 20100012468
    Abstract: A material handling system for moving material from a storage device to a receiver comprises a counter rotating double screw feeder extending from the storage device to the receiver. The counter rotating double screw feeder comprises an outer screw feed member; an inner screw feed member; where the outer screw feed member being positioned in an outer screw feed member tube; and the inner screw feed member being positioned in an inner screw feed member tube. The material is feed from the storage device to the process tube via the outer screw feed member; the inner screw feed member removes gas and byproducts from the receiver.
    Type: Application
    Filed: July 15, 2008
    Publication date: January 21, 2010
    Inventors: Ralf Jonczyk, James A. Rand
  • Patent number: 7456084
    Abstract: There is provided a method of fabricating a wafer, comprising depositing semiconductor material into a recess in a setter, moving the setter through a heating/cooling region to subject the semiconductor material to a temperature profile, and removing a wafer from the recess. The size and shape of the wafer are substantially equal to the size of the wafer when it is used. As a result, the wafer can be fabricated in any desired shape and with any of a variety of surface structural features and/or internal structural features. The temperature profile can be closely controlled, enabling production of wafers having structural features not previously obtainable. There are also provided wafers formed by such methods and setters for use in such methods.
    Type: Grant
    Filed: January 28, 2005
    Date of Patent: November 25, 2008
    Assignee: Heritage Power LLC
    Inventors: Ralf Jonczyk, Scott L. Kendall, James A. Rand
  • Patent number: 6420643
    Abstract: A polycrystalline film of silicon including silicon grains having an aspect ratio, d/t, of more than 1:1, wherein “d” is the grain diameter and “t” is the grain thickness. The polycrystalline film of silicon can be used to form an electronic device, such as a monolithically integrated solar cell having ohmic contacts formed on opposed surfaces or on the same surface of the film. A plurality of solar cells can be monolithically integrated to provide a solar cell module that includes an electrically insulating substrate and at least two solar cells disposed on the substrate in physical isolation from one another. Methods for manufacturing the film, solar cell and solar cell module are also disclosed. The simplified structure and method allow for substantial cost reduction on a mass-production scale, at least in part due to the high aspect ratio silicon grains in the film.
    Type: Grant
    Filed: February 2, 2001
    Date of Patent: July 16, 2002
    Assignee: AstroPower, Inc.
    Inventors: David H. Ford, Allen M. Barnett, Robert B. Hall, James A. Rand
  • Patent number: 6362021
    Abstract: A polycrystalline film of silicon including silicon grains having an aspect ratio, d/t, of more than 1:1, wherein “d” is the grain diameter and “t” is the grain thickness. The polycrystalline film of silicon can be used to form an electronic device, such as a monolithically integrated solar cell having ohmic contacts formed on opposed surfaces or on the same surface of the film. A plurality of solar cells can be monolithically integrated to provide a solar cell module that includes an electrically insulating substrate and at least two solar cells disposed on the substrate in physical isolation from one another. Methods for manufacturing the film, solar cell and solar cell module are also disclosed. The simplified structure and method allow for substantial cost reduction on a mass-production scale, at least in part due to the high aspect ratio silicon grains in the film.
    Type: Grant
    Filed: February 2, 2001
    Date of Patent: March 26, 2002
    Assignee: AstroPower, Inc.
    Inventors: David H. Ford, Allen M. Barnett, Robert B. Hall, James A. Rand
  • Publication number: 20010020485
    Abstract: A polycrystalline film of silicon including silicon grains having an aspect ratio, d/t, of more than 1:1, wherein “d” is the grain diameter and “t” is the grain thickness. The polycrystalline film of silicon can be used to form an electronic device, such as a monolithically integrated solar cell having ohmic contacts formed on opposed surfaces or on the same surface of the film. A plurality of solar cells can be monolithically integrated to provide a solar cell module that includes an electrically insulating substrate and at least two solar cells disposed on the substrate in physical isolation from one another. Methods for manufacturing the film, solar cell and solar cell module are also disclosed. The simplified structure and method allow for substantial cost reduction on a mass-production scale, at least in part due to the high aspect ratio silicon grains in the film.
    Type: Application
    Filed: February 2, 2001
    Publication date: September 13, 2001
    Applicant: AstroPower
    Inventors: David H. Ford, Allen M. Barnett, Robert B. Hall, James A. Rand
  • Publication number: 20010011554
    Abstract: A polycrystalline film of silicon including silicon grains having an aspect ratio, d/t, of more than 1:1, wherein “d” is the grain diameter and “t” is the grain thickness. The polycrystalline film of silicon can be used to form an electronic device, such as a monolithically integrated solar cell having ohmic contacts formed on opposed surfaces or on the same surface of the film. A plurality of solar cells can be monolithically integrated to provide a solar cell module that includes an electrically insulating substrate and at least two solar cells disposed on the substrate in physical isolation from one another. Methods for manufacturing the film, solar cell and solar cell module are also disclosed. The simplified structure and method allow for substantial cost reduction on a mass-production scale, at least in part due to the high aspect ratio silicon grains in the film.
    Type: Application
    Filed: February 2, 2001
    Publication date: August 9, 2001
    Applicant: AstroPower
    Inventors: David H. Ford, Allen M. Barnett, Robert B. Hall, James A. Rand
  • Patent number: 6211455
    Abstract: A polycrystalline film of silicon including silicon grains having an aspect ratio, d/t, of more than 1:1, wherein “d” is the grain diameter and “t” is the grain thickness. The polycrystalline film of silicon can be used to form an electronic device, such as a monolithically integrated solar cell having ohmic contacts formed on opposed surfaces or on the same surface of the film. A plurality of solar cells can be monolithically integrated to provide a solar cell module that includes an electrically insulating substrate and at least two solar cells disposed on the substrate in physical isolation from one another. Methods for manufacturing the film, solar cell and solar cell module are also disclosed. The simplified structure and method allow for substantial cost reduction on a mass-production scale, at least in part due to the high aspect ratio silicon grains in the film.
    Type: Grant
    Filed: July 1, 1999
    Date of Patent: April 3, 2001
    Assignee: Astropower
    Inventors: David H. Ford, Allen M. Barnett, Robert B. Hall, James A. Rand
  • Patent number: 6207891
    Abstract: The invention relates to a silicon sheet having columnar grains extending axially through the sheet from one free surface of the sheet to the other free surface. The sheet has an electrical resistivity in the range of 0.1 to 10 ohm-cm.
    Type: Grant
    Filed: February 1, 2000
    Date of Patent: March 27, 2001
    Assignee: Astropower, Inc.
    Inventors: Robert B. Hall, Allen M. Barnett, Joseph C. Checchi, David H. Ford, Christopher L. Kendall, James A Rand
  • Patent number: 6111191
    Abstract: The invention relates to improved techniques for manufacturing columnar-grained polycrystalline sheets which have particular utility as substrates or wafers for solar cells. The sheet is made from silicon on a setter material which supports the silicon material. The setter material and silicon are subjected to a thermal profile all of which promote columnar growth. The thermal profile sequentially creates a melt region where a thin-film capping layer grows at the top of the silicon, a nucleation region where preferential nucleation occurs at the capping-layer/molten-silicon interface, and then a growth region where both liquid and a growing polycrystalline sheet layer coexist. An annealing region is created where the temperature of the grown polycrystalline silicon sheet layer is controllably reduced to effect stress relief.
    Type: Grant
    Filed: March 2, 1998
    Date of Patent: August 29, 2000
    Assignee: AstroPower, Inc.
    Inventors: Robert B. Hall, Allen M. Barnett, Sandra R. Collins, Joseph C. Checchi, David H. Ford, Christopher L. Kendall, James A Rand, Chad B. Moore
  • Patent number: 5496416
    Abstract: The invention relates to techniques for manufacturing columnar-grained polycrystalline sheets which have particular utility as substrates or wafers for solar cells. The sheet is made by applying granular silicon to a setter material which supports the granular material. The setter material and granular silicon are subjected to a thermal profile all of which promote columnar growth by melting the silicon from the top downwardly. The thermal profile sequentially creates a melt region at the top of the granular silicon and then a growth region where both liquid and a growing polycrystalline sheet layer coexist. An annealing region is created where the temperature of the grown polycrystalline silicon sheet layer is controllably reduced to effect stress relief.
    Type: Grant
    Filed: August 5, 1994
    Date of Patent: March 5, 1996
    Assignee: Astropower, Inc.
    Inventors: Robert B. Hall, Allen M. Barnett, Sandra R. Collins, Joseph C. Checchi, David H. Ford, Christopher L. Kendall, Steven M. Lampo, James A. Rand
  • Patent number: 5336335
    Abstract: The invention relates to techniques for manufacturing columnar-grained polycrystalline sheets which have particular utility as substrates or wafers for solar cells. The sheet is made by applying granular silicon to a setter material which supports the granular material. The setter material and granular silicon are subjected to a thermal profile all of which promote columnar growth by melting the silicon from the top downwardly. The thermal profile sequentially creates a melt region at the top of the granular silicon and then a growth region where both liquid and a growing polycrystalline sheet layer coexist. An annealing region is created where the temperature of the grown polycrystalline silicon sheet layer is controllably reduced to effect stress relief.
    Type: Grant
    Filed: October 9, 1992
    Date of Patent: August 9, 1994
    Assignee: AstroPower, Inc.
    Inventors: Robert B. Hall, Allen M. Barnett, Jacob E. Brown, Joseph C. Checchi, David H. Ford, Christopher L. Kendall, William P. Mulligan, James A. Rand, Todd R. Ruffins
  • Patent number: 5314489
    Abstract: A hip prosthesis is disclosed which employs a number of cement spacers located on the surface of the stem of the prosthesis immediately below a collar which makes direct and parallel contact with calcar bone when a stem of the prosthesis is seated in medullary canal of the patient. The collar is constructed to provide even stress distribution to the bone.
    Type: Grant
    Filed: November 6, 1992
    Date of Patent: May 24, 1994
    Assignee: Johnson & Johnson Orthopaedics, Inc.
    Inventors: William H. Hoffman, Richard D. Scott, James A. Rand
  • Patent number: 5266125
    Abstract: A plurality of thin polycrystalline silicon solar cells formed on a ceramic substrate and which are electrically series connected to form a monolithically interconnected submodule. Adjacent solar cells are electrically separated by a vertical trench and electrically connected by interconnects located below the light receiving surface of each solar cell. The submodules are provided with external electrical contacts for electrically connecting into a photovoltaic module assembly.
    Type: Grant
    Filed: May 12, 1992
    Date of Patent: November 30, 1993
    Assignee: AstroPower, Inc.
    Inventors: James A. Rand, Allen M. Barnett, Robert B. Hall
  • Patent number: 5057163
    Abstract: A thin-film photovoltaic solar cell features a thin polycrystalline silicon active semiconductor formed over a conductive ceramic substrate. Between the substrate and the adjacent active semiconductor layer is a barrier layer which provides for reflection of light, minimizes back surface recombination and prevents contamination of the active semiconductor.
    Type: Grant
    Filed: May 4, 1988
    Date of Patent: October 15, 1991
    Assignee: AstroPower, Inc.
    Inventors: Allen M. Barnett, Robert B. Hall, James A. Rand, David H. Ford
  • Patent number: 5047058
    Abstract: A plurality of various shaped wedges, each wedge having an upper and lower face, each face including a plurality of spaced aligned protrusions adapted to engage a plurality of channels formed in the under surface of the tibial base, the protrusions registering with the channels to allow positioning of the wedge relative to the shape of the tibial component in various positions along the edge of the component, so that the plurality of wedges may be positioned to align themselves with the edge of the tibial component, and therefore in addition to providing a spacer between the bone and the undersurface of the component, to be secured within the same confined area as the component.
    Type: Grant
    Filed: April 23, 1990
    Date of Patent: September 10, 1991
    Assignees: Smith & Nephew Richards, Inc., Mayo Foundation for Medical Education & Research
    Inventors: Jeffrey G. Roberts, James A. Rand, Thomas Buford, III, Jennifer J. Lackey
  • Patent number: 4950298
    Abstract: A femoral component base having a pair of laterally spaced apart condylar portions, each of which has an external surface that is smoothly convexly curved anterior-posteriorly to match generally the distal profile of the anatomical femoral condyle and smoothly convexly curved laterally throughout its antero-posterior extent. The external convexly curved surfaces engage the tibial component having a platform portion laterally with spaced apart concavities, each of which would receive one of the condylar portions of the femoral component to allow antero-posterior rotation between the components during use of the joint. The femoral component includes a modular member having adjustable plates for adjusting the position of the femoral component in response to the bone condition discovered during surgery. The tibial, femoral and modular components further include a triangular, ramp post and corresponding confined recess to limit flexion and undesirable lateral movement.
    Type: Grant
    Filed: April 8, 1988
    Date of Patent: August 21, 1990
    Inventors: Ramon B. Gustilo, James A. Rand, Jeffrey G. Roberts, Jennifer J. Lackey
  • Patent number: RE36156
    Abstract: The invention relates to techniques for manufacturing columnar-grained polycrystalline sheets which have particular utility as substrates or wafers for solar cells. The sheet is made by applying granular silicon to a setter material which supports the granular material. The setter material and granular silicon are subjected to a thermal profile all of which promote columnar growth by melting the silicon from the top downwardly. The thermal profile sequentially creates a melt region at the top of the granular silicon and then a growth region where both liquid and a growing polycrystalline sheet layer coexist. An annealing region is created where the temperature of the grown polycrystalline silicon sheet layer is controllably reduced to effect stress relief.
    Type: Grant
    Filed: January 24, 1997
    Date of Patent: March 23, 1999
    Assignee: Astropower, Inc.
    Inventors: Robert B. Hall, Allen M. Barnett, Sandra R. Collins, Joseph C. Checchi, David H. Ford, Christopher L. Kendall, Steven M. Lampo, James A. Rand