Patents by Inventor James A Rand

James A Rand has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7975833
    Abstract: A material handling system for moving material from a storage device to a receiver comprises a counter rotating double screw feeder extending from the storage device to the receiver. The counter rotating double screw feeder comprises an outer screw feed member; an inner screw feed member; where the outer screw feed member being positioned in an outer screw feed member tube; and the inner screw feed member being positioned in an inner screw feed member tube. The material is feed from the storage device to the process tube via the outer screw feed member; the inner screw feed member removes gas and byproducts from the receiver.
    Type: Grant
    Filed: July 15, 2008
    Date of Patent: July 12, 2011
    Assignee: General Electric Company
    Inventors: Ralf Jonczyk, James A Rand
  • Patent number: 6207891
    Abstract: The invention relates to a silicon sheet having columnar grains extending axially through the sheet from one free surface of the sheet to the other free surface. The sheet has an electrical resistivity in the range of 0.1 to 10 ohm-cm.
    Type: Grant
    Filed: February 1, 2000
    Date of Patent: March 27, 2001
    Assignee: Astropower, Inc.
    Inventors: Robert B. Hall, Allen M. Barnett, Joseph C. Checchi, David H. Ford, Christopher L. Kendall, James A Rand
  • Patent number: 6111191
    Abstract: The invention relates to improved techniques for manufacturing columnar-grained polycrystalline sheets which have particular utility as substrates or wafers for solar cells. The sheet is made from silicon on a setter material which supports the silicon material. The setter material and silicon are subjected to a thermal profile all of which promote columnar growth. The thermal profile sequentially creates a melt region where a thin-film capping layer grows at the top of the silicon, a nucleation region where preferential nucleation occurs at the capping-layer/molten-silicon interface, and then a growth region where both liquid and a growing polycrystalline sheet layer coexist. An annealing region is created where the temperature of the grown polycrystalline silicon sheet layer is controllably reduced to effect stress relief.
    Type: Grant
    Filed: March 2, 1998
    Date of Patent: August 29, 2000
    Assignee: AstroPower, Inc.
    Inventors: Robert B. Hall, Allen M. Barnett, Sandra R. Collins, Joseph C. Checchi, David H. Ford, Christopher L. Kendall, James A Rand, Chad B. Moore