Abstract: A thin film, solid state device includes a conductive thin film formed on a substrate, with a resistive layer overlying the conductive thin film and with electrical contacts formed on the upper surface of the resistive layer. Electrical current flows between the electrical contacts through the resistive overlayer and the conductive thin film. The resistivity and dimensions of the resistive layer are such that, preferably, only a small fraction of any current flowing between the electrical contacts will flow solely within the resistive layer, yet the magnitude of the current will not be reduced below a desired signal level due to the presence of the resistive layer. The resistive layer is comprised of material which will not diffuse into the thin film conductive layer during device processing. Nitrogen doped tantalum is the preferred material for the resistive layer.

Abstract: A magnetic, solid state memory cell or sensor includes a magnetoresistive, ferromagnetic layer and a resistive layer overlying the magnetoresistive layer. The resistivity and dimensions of the resistive layer are such that, preferably, only a small fraction of any sense current flowing through the cell or sensor will flow between input and output contacts by way of the resistive layer, yet the magnitude of the sense current will not be reduced below a desired signal level due to the presence of the resistive layer. The resistive layer is comprised of a material which will not diffuse into the magnetoresistive layer. A compound or mixture of a metal and either nitrogen or oxygen, such as tantalum and nitrogen, is perferred as the resistive layer. It is also preferred that the resistive layer be nonmagnetic.

Abstract: A magnetic, solid state memory cell or sensor includes a magnetoresistive, ferromagnetic layer and a resistive layer overlying the magnetoresistive layer. The resistivity and dimensions of the resistive layer are such that, preferably, only a small fraction of any sense current flowing through the cell or sensor will flow between input and output contacts by way of the resistive layer, yet the magnitude of the sense current will not be reduced below a desired signal level due to the presence of the resistive layer. The resistive layer is comprised of a material which will not diffuse into the magnetoresistive layer. A compound or mixture of a metal and either nitrogen or oxygen, such as tantalum and nitrogen, is preferred as the resistive layer. It is also preferred that the resistive layer be nonmagnetic.

Abstract: A thin film having high electrical resistivity is produced on a substrate by radio frequency sputtering from a chrome/silicon source in a nitrogen/argon atmosphere.

Abstract: Radio frequency sputtering of silicon and chromium alloy targets in a nitrogen and argon atmosphere while applying an electrical bias to the substrate produces an electrically resitive thin film on said substrate.