Abstract: A photon-activated quantum dot capacitor and method of fabrication. A photon-activated quantum dot capacitor photodetector having a read only integrated circuit; and a photon-activated quantum dot capacitor chip hybridized with the read only integrated circuit, wherein said photon-activated quantum dot capacitor chip comprises colloidal quantum dots that detect photons as a change in a dielectric constant of the colloidal quantum dots of the photon-activated quantum dot capacitor chip, including the further implementation of a photodetector.

Abstract: A hybrid frame-based and event driven pixel, the pixel comprising a frame-based capture circuit, an event-driven capture circuit, and a photodiode in electrical communication with both the frame-based and event-driven capture circuits, wherein the frame based capture circuit is a buffered direct injection circuit, and wherein the event-driven capture circuit is a dynamic vision system circuit.

Abstract: A hybrid frame-based and event driven pixel, the pixel comprising a frame-based capture circuit, an event-driven capture circuit, and a photodiode in electrical communication with both the frame-based and event-driven capture circuits, wherein the frame based capture circuit is a buffered direct injection circuit, and wherein the event-driven capture circuit is a dynamic vision system circuit.

Abstract: A hybrid frame-based and event driven pixel, the pixel comprising a frame-based capture circuit, an event-driven capture circuit, and a photodiode in electrical communication with both the frame-based and event-driven capture circuits, wherein the frame-based capture circuit is a capacitive transimpedance amplifier circuit, and wherein the event-driven capture circuit is a linear asynchronous event representation circuit.

Abstract: A seeker includes a detection array having at least 2500 sensing pixels arranged in rows by row request lines and in columns by column request lines. At least one pixel includes an electromagnetic radiation sensor to trigger the pixel in response to sensing a triggering quantity of electromagnetic radiation, a row request circuit to send a row request after the pixel triggers, and a column request circuit to send a column request after the pixel triggers. The seeker further includes a row receiver to receive the row requests, a column receiver to receive the column requests, and a sequencer to receive, for each triggering pixel, the row of the row request and the column of the column request, and to generate an event including the received row and column of the pixel. The seeker also includes a time stamper to generate a time stamp for the generated event.

Abstract: A seeker includes a detection array having at least 2500 sensing pixels arranged in rows by row request lines and in columns by column request lines. At least one pixel includes an electromagnetic radiation sensor to trigger the pixel in response to sensing a triggering quantity of electromagnetic radiation, a row request circuit to send a row request after the pixel triggers, and a column request circuit to send a column request after the pixel triggers. The seeker further includes a row receiver to receive the row requests, a column receiver to receive the column requests, and a sequencer to receive, for each triggering pixel, the row of the row request and the column of the column request, and to generate an event including the received row and column of the pixel. The seeker also includes a time stamper to generate a time stamp for the generated event.

Abstract: An image sensor suitable for low light level imaging, the image sensor having a plurality of pixels, each pixel having nMOS and pMOS components, provides a lower noise threshold as compared to prior art single-flavor pixels.

Abstract: An image sensor suitable for low light level imaging, the image sensor having a plurality of pixels, each pixel having nMOS and pMOS components, provides a lower noise threshold as compared to prior art single-flavor pixels.

Abstract: Techniques are provided for a physically unclonable function (PUF) device. One example PUF device includes, a readout integrated circuit (ROIC) (such as a ROIC for a focal plane array or other imaging application), a nanomaterial-based PUF layer on the ROIC, and a common electrode on the PUF layer. The nanomaterial is randomly distributed throughout the PUF layer. A method of using a PUF device that includes a nanomaterial-based PUF layer coupled to a ROIC, where the nanomaterial is randomly distributed throughout the PUF layer, includes driving the ROIC at a plurality of locations coupled to a corresponding plurality of locations of the PUF layer, sensing the nanomaterial at the locations of the PUF layer, and generating a unique identification key from the sensed locations of the PUF layer. The method can be used, for example, for secure decryption or for identifying or authenticating the PUF device.

Abstract: A photon-activated quantum dot capacitor and method of fabrication. A photon-activated quantum dot capacitor photodetector having a read only integrated circuit; and a photon-activated quantum dot capacitor chip hybridized with the read only integrated circuit, wherein said photon-activated quantum dot capacitor chip comprises colloidal quantum dots that detect photons as a change in a dielectric constant of the colloidal quantum dots of the photon-activated quantum dot capacitor chip, including the further implementation of a photodetector.

Abstract: Techniques are disclosed that provide a multi-mode sensor having the capability to support both passive and active operation. One embodiment provides a sensor readout device for operation with a sensor array having rows and columns of detectors. The device includes a column cell for receiving a detector output signal from a first row of a column of the sensor array, and an additional column cell. The device further includes a multiplexer configured to steer a detector output signal from a second row of the column of the sensor array to the additional column cell, thereby allowing multiple rows of the sensor array to be readout simultaneously. In some cases, the sensor array includes an active/passive dual mode central windowed area, and the multiplexer allows columns of the windowed area to be readout at two or more speeds.

Abstract: Techniques are disclosed for providing a multi-zone sensing array configured for use in a dual-mode active/passive sensor system. In some embodiments, the techniques can be used to minimize or otherwise reduce power dissipation in sensor arrays, while further providing the ability to readout the active returns rapidly. The techniques can be implemented, for example, by using the full N×M array format for target acquisition in a passive imaging mode, and then, with the aid of a gimbal for instance, place the region-of-interest in a subset of the array configured with dual-mode active/passive pixel receivers to provide three-dimensional imaging. Such techniques are capable of, for example, supporting both active and passive operating modes of a countermeasure system.

Abstract: Techniques are disclosed that provide time delay integration (TDI) in detection signal processing (such as a signal generated by an IR sensor). The techniques can be implemented, for example, to provide blanking and/or TDI functionality at the readout integrated circuit (ROIC) level for active focal plane array (FPA) elements or other transducer elements. In one example embodiment, an integrator circuit is configured with one or more switches for allowing integration of multiple input signal events such that reset of the integration is controlled independently and can be reset equal to or less often than the number of single events, thereby allowing one or more detected events to be integrated together within a frame interval.

Abstract: Techniques are disclosed for radiation sensors that generate current signal to provide flexible placement of one or more integration intervals between resets of an integration capacitor. With flexible timing, an embodiment of the present invention provides several modes of operation including: multiple stray light blanking interval to occur during the integration cycle; range gating for LIDAR applications; time-delay-integration (TDI) with multiple short integration periods between frame resets; and hyper-resolution gating that provides better resolution than is normally possible with a fixed gate width. Numerous variations will be apparent in light of this disclosure.

Abstract: An improved structure for interconnecting focal plane arrays. A first body having a first coefficient of expansion comprising a detector array is connected by interconnection apparatus to a second body having a second coefficient of expansion. The second body comprises semiconductor electronics and includes a bottom surface which opposes the surface connected to the first body. A layer of material is bonded with an adhesive to the second body's bottom surface wherein the bonded layer has a third coefficient of expansion which is greater than the first and second coefficients of expansion. In one aspect of the invention, the interconnection apparatus comprises interconnect columns made substantially of indium, the second body is substantially comprised of silicon and the first body is substantially comprised of material selected from the group consisting of CdTe and HgCdTe. The bonded layer may advantageously be substantially comprised of copper.