Abstract: An embodiment includes a light source. The light source may include a substrate and a diffuser. The substrate may include a first surface and a second surface. The second surface may be opposite the first surface. The diffuser may be carried by the substrate. The diffuser may be configured to receive an optical signal from the substrate after the optical signal propagates through the substrate and to control a particular profile of a resultant beam of the optical signal over two axes after the optical signal propagates through the integrated diffuser.

Abstract: Described herein are methods, systems, and devices which in some embodiments may be used to detect noise produced by a vehicle and identify the vehicle that is the source of the noise.

Abstract: Described herein are methods, systems, and devices which in some embodiments may be used to detect noise produced by a vehicle and identify the vehicle that is the source of the noise.

Abstract: An avalanche photodiode can include: an avalanche region having one or more layers prepared from GaAs; an N? absorption layer extending across the avalanche region; an N-type layer above at least a center portion of the N? absorption layer; and optionally a lower conductivity layer laterally from the N-type layer to a surface of the avalanche region and above a perimeter portion of the N? absorption layer, the lower conductivity layer having lower conductivity compared to the N-type layer. The avalanche photodiode can include a window layer above the N-type layer and lower conductivity layer, and an anode contact above the window layer. The avalanche photodiode can include an N+ barrier layer below the N? absorption layer, an N+ conduction layer below the N+ barrier layer, a substrate below the N+ conduction layer, and a cathode contact coupled with the N+ conduction layer.

Abstract: An avalanche photodiode can include: an avalanche region having one or more layers prepared from GaAs; an N? absorption layer extending across the avalanche region; an N-type layer above at least a center portion of the N? absorption layer; and optionally a lower conductivity layer laterally from the N-type layer to a surface of the avalanche region and above a perimeter portion of the N? absorption layer, the lower conductivity layer having lower conductivity compared to the N-type layer. The avalanche photodiode can include a window layer above the N-type layer and lower conductivity layer, and an anode contact above the window layer. The avalanche photodiode can include an N+ barrier layer below the N? absorption layer, an N+ conduction layer below the N+ barrier layer, a substrate below the N+ conduction layer, and a cathode contact coupled with the N+ conduction layer.

Abstract: A system and method for aligning optical components based on coupled optical power and encircled flux is described. In one embodiment of the invention, coupled power and encircled flux is measured corresponding to multiple locations of a first optical component relative to a second optical element. The measured coupled power and encircled flux values are analyzed and an appropriate location of the first optical component relative to the second optical component is selected.

Abstract: A VCSEL having a metallic heat spreading layer adjacent a semiconductor buffer layer containing an insulating structure. The heat spreading layer includes an opening that enables light emitted by an active region to reflect from a distributed Bragg reflector (DBR) top mirror located above the heat spreading layer. A substrate is below the active region. A lower contact provides electrical current to that substrate. The lower contact includes an opening that enables light emitted from the active region to reflect from a distributed Bragg reflector (DBR) lower mirror. Beneficially, the substrate includes a slot that enables light to pass through an opening in the lower contact. That slot acts as an alignment structure that enables optical alignment of an external feature to the VCSEL.

Abstract: A VCSEL having a metallic heat spreading layer adjacent a semiconductor buffer layer containing an insulating structure. The heat spreading layer includes an opening that enables light emitted by an active region to reflect from a distributed Bragg reflector (DBR) top mirror located above the heat spreading layer. A substrate is below the active region. A lower contact provides electrical current to that substrate. The lower contact includes an opening that enables light emitted from the active region to reflect from a distributed Bragg reflector (DBR) lower mirror. Beneficially, the substrate includes a slot that enables light to pass through an opening in the lower contact. That slot acts as an alignment structure that enables optical alignment of an external feature to the VCSEL.