Abstract: A speaker can have a main body with a generally spheroidal shape, which can be supported standing on its end. The speaker can include a subwoofer that faces forward. A plurality of mid-range drivers can be distributed around the sub-woofer, facing generally forward and radially outward. A plurality of tweeters can be distributed around the sub-woofer, facing generally forward and generally outward. The outer housing portion of the speaker can be covered with a fabric material. A user interface ring 162 can be touch sensitive to receive input, and can have a plurality of lights that can be illuminated separately to convey information to the user.

Abstract: In one aspect a semiconductor device as set forth herein can include a spacer having a first section of a first material and a second section of a second material, the second section disposed above a certain elevation and the first section disposed below the certain elevation. In one aspect a semiconductor device as set forth herein can include a conductive gate structure having a first length at elevations below a certain elevation and a second length at elevations above the certain elevation, the second length being less than the first length. A semiconductor device having one or more of a plural material spacer or a reduced length upper elevation conductive gate structure can feature a reduced likelihood of electrical shorting.

Abstract: In one aspect a semiconductor device as set forth herein can include a spacer having a first section of a first material and a second section of a second material, the second section disposed above a certain elevation and the first section disposed below the certain elevation. In one aspect a semiconductor device as set forth herein can include a conductive gate structure having a first length at elevations below a certain elevation and a second length at elevations above the certain elevation, the second length being less than the first length. A semiconductor device having one or more of a plural material spacer or a reduced length upper elevation conductive gate structure can feature a reduced likelihood of electrical shorting.

Abstract: Disclosed herein are various methods of forming metal-containing insulating material regions on a metal layer of a gate structure of a semiconductor device. In one example, the method includes forming a gate structure of a transistor, the gate structure comprising at least a first metal layer, and forming a first metal-containing insulating material region in the first metal layer by performing a gas cluster ion beam process using to implant gas molecules into the first metal layer.

Abstract: A two cycle cutter assembly for severing the end of a multiconnector flexible cable. The assembly employs an air cylinder to supply a down stroke to a guillotine carbide upper blade as a prescribed length of cable is presented between the upper blade and a fixed lower blade.