Patents by Inventor James Albert Slinkman

James Albert Slinkman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe
    Patent number: 6531379
    Abstract: The present invention employs a scanned atomic force probe to physical incorporate impurity atoms (dopant or bandgap) into a semiconductor substrate so that the impurity atoms have high resolution and improved placement. Specifically, the method of the present invention comprising a step of physically contacting a semiconductor surface having a layer of a dopant/bandgap source material thereon such that upon said physical contact impurity atoms from the dopant/bandgap source material are driven into the semiconductor substrate.
    Type: Grant
    Filed: April 9, 2001
    Date of Patent: March 11, 2003
    Assignee: International Business Machines Corporation
    Inventors: Toshiharu Furukawa, John Joseph Ellis-Monaghan, James Albert Slinkman
  • Micro heating of selective regions
    Patent number: 6514840
    Abstract: A method for selectively heating a substrate without damaging surrounding regions of the substrate. In particular, the invention provides for a method of selectively activating doped regions of a semiconductor device without damaging surrounding doped and activated regions. Specifically, the invention provides a laser anneal which activates locally doped regions, while surrounding doped and activated regions are protected using a reflective mask.
    Type: Grant
    Filed: April 13, 1999
    Date of Patent: February 4, 2003
    Assignee: International Business Machines Corporation
    Inventors: Howard Ted Barrett, Toshiharu Furukawa, Donald W. Rakowski, James Albert Slinkman
  • Reduction of reverse short channel effects by implantation of neutral dopants
    Patent number: 6486510
    Abstract: A FET with reduced reverse short channel effects is described, as well as a method to make said FET. Germanium is implanted throughout a semiconductor substrate at an intensity and dose such that a peak ion concentration is created below the source and drain of the FET. The germanium can be implanted prior to gate and source and drain formation, and reduces the reverse short channel effect normally seen in FETs. The short channel effect normally occurring in FETs is not negatively impacted by the germanium implant.
    Type: Grant
    Filed: November 12, 2001
    Date of Patent: November 26, 2002
    Assignee: International Business Machines Corporation
    Inventors: Jeffrey Scott Brown, Stephen Scott Furkay, Robert J. Gauthier, Jr., Dale Warner Martin, James Albert Slinkman
  • Reduction of reverse short channel effects by implantation of neutral dopants
    Publication number: 20020063294
    Abstract: A FET with reduced reverse short channel effects is described, as well as a method to make said FET. Germanium is implanted throughout a semiconductor substrate at an intensity and dose such that a peak ion concentration is created below the source and drain of the FET. The germanium can be implanted prior to gate and source and drain formation, and reduces the reverse short channel effect normally seen in FETs. The short channel effect normally occurring in FETs is not negatively impacted by the germanium implant.
    Type: Application
    Filed: November 12, 2001
    Publication date: May 30, 2002
    Applicant: INTERNATIONAL BUSINESS MACHINES
    Inventors: Jeffrey Scott Brown, Stephen Scott Furkay, Robert J. Gauthier, Dale Warner Martin, James Albert Slinkman
  • Reduction of reverse short channel effects by deep implantation of neutral dopants
    Patent number: 6352912
    Abstract: A FET with reduced reverse short channel effects is described, as well as a method to make said FET. Germanium is implanted throughout a semiconductor substrate at an intensity and dose such that a peak ion concentration is created below the source and drain of the FET. The germanium can be implanted prior to gate and source and drain formation, and reduces the reverse short channel effect normally seen in FETs. The short channel effect normally occurring in FETs is not negatively impacted by the germanium implant.
    Type: Grant
    Filed: March 30, 2000
    Date of Patent: March 5, 2002
    Assignee: International Business Machines Corporation
    Inventors: Jeffrey Scott Brown, Stephen Scott Furkay, Robert J. Gauthier, Jr., Dale Warner Martin, James Albert Slinkman
  • MICRO HEATING OF SELECTIVE REGIONS
    Publication number: 20010044175
    Abstract: A method for selectively heating a substrate without damaging surrounding regions of the substrate. In particular, the invention provides for a method of selectively activating doped regions of a semiconductor device without damaging surrounding doped and activated regions. Specifically, the invention provides a laser anneal which activates locally doped regions, while surrounding doped and activated regions are protected using a reflective mask.
    Type: Application
    Filed: April 13, 1999
    Publication date: November 22, 2001
    Inventors: HOWARD TED BARRETT, TOSHIHARU FURUKAWA, DONALD W. RAKOWSKI, JAMES ALBERT SLINKMAN
  • High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe
    Publication number: 20010021575
    Abstract: The present invention employs a scanned atomic force probe to physical incorporate impurity atoms (dopant or bandgap) into a semiconductor substrate so that the impurity atoms have high resolution and improved placement. Specifically, the method of the present invention comprising a step of physically contacting a semiconductor surface having a layer of a dopant/bandgap source material thereon such that upon said physical contact impurity atoms from the dopant/bandgap source material are driven into the semiconductor substrate.
    Type: Application
    Filed: April 9, 2001
    Publication date: September 13, 2001
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Toshiharu Furukawa, John Joseph Ellis-Monaghan, James Albert Slinkman
  • High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe
    Patent number: 6251755
    Abstract: The present invention employs a scanned atomic force probe to physical incorporate impurity atoms (dopant or bandgap) into a semiconductor substrate so that the impurity atoms have high resolution and improved placement. Specifically, the method of the present invention comprising a step of physically contacting a semiconductor surface having a layer of a dopant/bandgap source material thereon such that upon said physical contact impurity atoms from the dopant/bandgap source material are driven into the semiconductor substrate.
    Type: Grant
    Filed: April 22, 1999
    Date of Patent: June 26, 2001
    Assignee: International Business Machines Corporation
    Inventors: Toshiharu Furukawa, John Joseph Ellis-Monaghan, James Albert Slinkman