Patents by Inventor James B. Burris

James B. Burris has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Plasma and plasma UV deposition of SiO.sub.2
    Patent number: 4916091
    Abstract: A processing apparatus and method utilizing a single process chamber to deposit a layer of doped or undoped silicon dioxide utilizing a silicon source and a dopant gas and a remote plasma from an oxygen source and a source of additional ultraviolet light.
    Type: Grant
    Filed: December 13, 1988
    Date of Patent: April 10, 1990
    Assignee: Texas Instruments Incorporated
    Inventors: Dean W. Freeman, James B. Burris, Cecil J. Davis, Lee Loewenstein
  • Processing apparatus and method
    Patent number: 4910043
    Abstract: A processing apparatus and method utilizing a single process chamber for deposition of silicon nitride with a silicon source, a remote plasma including a nitrogen source, additional ultraviolet energy coupled into the process chamber to provide additional molecular excitation of the silicon source.
    Type: Grant
    Filed: July 16, 1987
    Date of Patent: March 20, 1990
    Assignee: Texas Instruments Incorporated
    Inventors: Dean W. Freeman, James B. Burris, Cecil J. Davis, Lee M. Lowenstein
  • Method for wafer treating
    Patent number: 4906328
    Abstract: A processing apparatus and method utilizing a single process chamber to remove organics and metallic contaminates, remove native oxides, oxidize by heat and a oxidizing source, depositing a layer over the oxide formed with the capability of providing an source of additional ultraviolet light.
    Type: Grant
    Filed: December 12, 1988
    Date of Patent: March 6, 1990
    Assignee: Texas Instruments Incorporated
    Inventors: Dean W. Freeman, James B. Burris, Cecil J. Davis, Lee M. Loewenstein
  • Deposition of polysilicon using a remote plasma and in situ generation of UV light.
    Patent number: 4882299
    Abstract: A processing apparatus and method for depositing doped or undoped polysilicon on a wafer utilizing a single process chamber to heat the wafer, provide a silicon comtaining gas, and if desired, an appropriate dopant gas to the chamber with the excitation energy being provided by either or both of a remotely generated plasma form and illumination of the wafer with an in situ generated ultraviolet energy.
    Type: Grant
    Filed: November 5, 1987
    Date of Patent: November 21, 1989
    Assignee: Texas Instruments Incorporated
    Inventors: Dean W. Freeman, James B. Burris