Abstract: A method for dispatching based on metrology tool performance includes determining a precision metric associated with each of a plurality of metrology tools. A metrology request including context information is generated. A precision requirement for the metrology request is identified based on the context information. A set of the metrology tools capable of satisfying the metrology request is identified based on the precision requirement and the precision metrics. A manufacturing system includes a manufacturing execution system server and a metrology monitor. The manufacturing execution system server is configured to generate a metrology request including context information.

Abstract: A method includes collecting metrology data related to the processing of workpieces in a plurality of tools. Context data for the metrology data is generated. The context data includes collection purpose data. The metrology data is filtered based on the collection purpose data. A process control activity related to one of the tools is conducted based on the filtered metrology data. A system includes at least one metrology tool, a computer, and a process controller. The metrology tool is configured to collect metrology data related to the processing of workpieces in a plurality of tools. The computer is configured to generate context data for the metrology data, the context data including collection purpose data. The process controller is configured to filter the metrology data based on the collection purpose data and conduct a process control activity related to one of the tools based on the filtered metrology data.

Abstract: A method and an apparatus for analyzing line structures during semiconductor wafer processing. At least one semiconductor wafer is processed. Metrology data from the processed semiconductor wafer is acquired. Film property data from the semiconductor wafer is acquired. Data from a reference library is accessed; the data comprising optical data relating to a line structure formation on a semiconductor wafer, based upon the film property data. The metrology data is compared to data from the reference library. A line structure fault detection analysis is performed in response to the comparison of the metrology data and the reference library data.

Abstract: A method and an apparatus for performing film stack fault detection. At least one semiconductor wafer is processed. Metrology data from the processed semiconductor wafer is acquired. Data from a reference library comprising optical data relating to a film stack on the semiconductor wafer is accessed. The metrology data is compared to data from the reference library. A fault-detection analysis is performed in response to the comparison of the metrology data and the reference library data.