Abstract: A method is provided for a user to generate a password for a software application accessible from a computer system which includes a universal password generator (UPG). The UPG includes a specified parameter for generating the password, and the software application requires the password includes a specified parameter. The UPG is initiated and the universal password is inputted into the UPG. The specified parameter required by the application, and the UPG specified parameter are inputted into the UPG. The universal password is processed such that the specified parameter of the UPG, and the specified parameter of the application are used to generate the password. The password is then transferred to the application requiring the password. The password may be saved and associated in the UPG with the program such that when the user re-enters the program, the UPG program retrieves the password for reuse in the program.

Abstract: A method is provided for a user to generate a password for a software application accessible from a computer system which includes a universal password generator (UPG). The UPG includes a specified parameter for generating the password, and the software application requires the password includes a specified parameter. The UPG is initiated and the universal password is inputted into the UPG. The specified parameter required by the application, and the UPG specified parameter are inputted into the UPG. The universal password is processed such that the specified parameter of the UPG, and the specified parameter of the application are used to generate the password. The password is then transferred to the application requiring the password. The password may be saved and associated in the UPG with the program such that when the user re-enters the program, the UPG program retrieves the password for reuse in the program.

Abstract: A method is described for selectively depositing a GaN epitaxial layer on a substrate. The substrate is first patterned with a seed layer, preferably of AlN, and then the GaN epitxial layer is grown on the resulting patterned substrate by molecular beam epitaxy (MBE) such that growth occurs selectively over the seed layer.

Abstract: A method is described for selectively depositing a GaN epitaxial layer on a substrate. The substrate is first patterned with a seed layer, preferably of AlN, and then the GaN epitxial layer is grown on the resulting patterned substrate by molecular beam epitaxy (MBE) such that growth occurs selectively over the seed layer.

Abstract: The present invention provides a land surveying assist device, which can be remotely controlled on command for path alignment. The device includes a receiver for receiving beams of energy, such as infra-red energy, from a remote transmitter source in the field. The device further includes a servo mechanism to rotate the device on-command to achieve alignment with the incoming beam path from the remote transmitter. Alignment is achieved when the incoming beams are reflected from the device back to the remote transmitter source, at which time the servo mechanism is deactivated.

Abstract: There is described a method and an apparatus for depositing oxide, such as zinc oxide, on a substrate by R.F. magnetron sputtering. The oxide deposit is "switched" from a non-conducting to a highly conducting material by a second discharge caused by a voltage applied to a screen grid immediately in front of the substrate, or is rendered conducting by a heating step.

Abstract: A burst gate pulse generating circuit includes a normally saturated transistor responsive to a pulse representative of a horizontal sync component of a video signal which includes a burst interval. The sync pulse is coupled to a base input of the transistor via an RC differentiating network for causing the transistor to operate between saturated and cut-off states, such that a gate pulse produced at the transistor collector output is delayed relative to the sync pulse and substantially coincides with the burst interval. The circuit is arranged so that the sync pulse as coupled via the differentiating network causes the base-emitter junction of the transistor to break down in the reverse direction. The timing of the output gate pulse is therefore substantially independent of the sync pulse amplitude, which can vary undesirably, thereby promoting accurate pulse timing.