Abstract: An ionizing radiation detector includes a p-type semiconductor single crystal substrate having first and second major planar opposing surfaces, where the p-type semiconductor single crystal substrate is doped with n-type dopant atoms, and where a concentration of deep level acceptor defects is greater than a concentration of the n-type dopant atoms in the p-type semiconductor single crystal substrate; a cathode electrode on the first major planar opposing surface of the p-type semiconductor single crystal substrate, and a plurality of anode electrodes on the second major planar opposing surface of the p-type semiconductor single crystal substrate.

Abstract: An X-ray radiation detector includes a semiconductor material plate, at least one cathode located on a first side of the semiconductor material plate, and at least one anode located on a second side of the semiconductor material plate. The semiconductor material plate thickness is at least 1.9 mm. The X-ray radiation detector is configured to operate at an absolute value of applied bias voltage of 1050 VDC to 1500 VDC, such that an electric field of at least 550 VDC/mm is generated in the semiconductor material plate.

Abstract: A method of fabricating radiation sensor dies includes forming a plurality of radiation-sensitive detector elements and a plurality of visible identifiers on at least some of the radiation-sensitive detector elements on a substrate, where each visible identifier is located in a different sub-region of the substrate containing a subset of the radiation-sensitive detector elements, and separating the sub-regions of the substrate from one another to provide a plurality of radiation sensor dies, where the visible identifier on each radiation sensor die uniquely identifies the radiation sensor die with respect to the other radiation sensor dies of the plurality of radiation sensor dies.