Abstract: A bi-layer anti-reflective coating for use in photolithographic applications, and specifically, for use in ultraviolet photolithographic processes. The bi-layered anti-reflective coating is used to minimize pattern distortion due to reflections from neighboring features in the construction of microcircuits. The bi-layer anti-reflection coating features a first layer, an absorption layer, disposed on a second layer, a dielectric layer, which is then disposed between a substrate and a photoresist layer. The dielectric/absorption layer comprises one combination selected from Ta/Al2O3, Ta/SiO2, Ta/TiO2, Ta/Ta2O5, Ta/Cr2O3, Ta/Si3N4, Ti/Al2O3, Ti/SiO2, Ti/TiO2, Ti/Ta2O5, Ti/Cr2O3, Ti/Si3N4, Cr/Al2O3, Cr/SiO2, Cr/TiO2, Cr/Ta2O5, Cr/Cr2O3, Cr/Si3N4, Al/Al2O3, Al/TiO2, Al/Ta2O5, Al/Cr2O3, Al/Si3N4, Ni/Al2O3, Ni/SiO2, Ni/TiO2, Ni/Ta2O5, Ni/Cr2O3, Ni/Si3N4, Ir/Al2O3, Ir/SiO2, Ir/TiO2, Ir/Ta2O5, Ir/Cr2O3, and Ir/Si3N4. At least the absorption and dielectric layers can be formed using vacuum deposition.

Abstract: A bi-layer anti-reflective coating for use in photolithographic applications, and specifically, for use in ultraviolet photolithographic processes. The bi-layered anti-reflective coating is used to minimize pattern distortion due to reflections from neighboring features in the construction of microcircuits. The bi-layer anti-reflection coating features a first layer, an absorption layer, disposed on a second layer, a dielectric layer, which is then disposed between a substrate and a photoresist layer. The dielectric/absorption layer comprises one combination selected from Ta/Al2O3, Ta/SiO2, Ta/TiO2, Ta/Ta2O5, Ta/Cr2O3, Ta/Si3N4, Ti/Al2O3, Ti/SiO2, Ti/TiO2, Ti/Ta2O5, Ti/Cr2O3, Ti/Si3N4, Cr/Al2O3, Cr/SiO2, Cr/TiO2, Cr/Ta2O5, Cr/Cr2O3, Cr/Si3N4, Al/Al2O3, Al/TiO2, Al/Ta2O5, Al/Cr2O3, Al/Si3N4, Ni/Al2O3, Ni/SiO2, Ni/TiO2, Ni/Ta2O5, Ni/Cr2O3, Ni/Si3N4, Ir/Al2O3, Ir/SiO2, Ir/TiO2, Ir/Ta2O5, Ir/Cr2O3, and Ir/Si3N4. At least the absorption and dielectric layers can be formed using vacuum deposition.

Abstract: An isotropic deposition method for trench narrowing of thin film magnetic write head features to be created by reactive ion etching. According to the method, a photolithographically defined photoresist trench is formed over a hardmask and underlying polymer layer as part of tri-layer resist process. Instead of performing the usual hardmask and polymer etching steps using the photoresist mask pattern, a spacer layer is deposited isotropically or directionally at an angle to cover the vertical side walls of the trench. The spacer layer is etchable by the hardmask etch process but resistant to the polymer etch process. When the hardmask etch process is performed, the spacer layer material applied to the trench side walls remains intact, thereby defining a narrowed trench that is extended by the subsequent base layer etch process.

Abstract: A method of making a magnetic head assembly wherein the magnetic head assembly has a write head with a pole tip includes the steps of forming a shaping layer on an underlying layer wherein the shaping layer has a side surface and a top surface, ion beam sputter depositing a ferromagnetic material layer on the underlying layer and on the side and top surfaces of the shaping layer and removing first and second portions of the ferromagnetic material layer from the underlying layer and the top surface of the shaping layer, respectively, leaving a remaining portion of the ferromagnetic material layer on the side surface of the shaping layer which is the aforementioned pole tip.

Abstract: An isotropic deposition method for trench narrowing of thin film magnetic write head features to be created by reactive ion etching. According to the method, a photolithographically defined photoresist trench is formed over a hardmask and underlying polymer layer as part of tri-layer resist process. Instead of performing the usual hardmask and polymer etching steps using the photoresist mask pattern, a spacer layer is deposited isotropically or directionally at an angle to cover the vertical side walls of the trench. The spacer layer is etchable by the hardmask etch process but resistant to the polymer etch process. When the hardmask etch process is performed, the spacer layer material applied to the trench side walls remains intact, thereby defining a narrowed trench that is extended by the subsequent base layer etch process.

Abstract: A bi-layer anti-reflective coating for use in photolithographic applications, and specifically, for use in ultraviolet photolithographic processes. The bi-layered antireflective coating is used to minimize pattern distortion due to reflections from neighboring features in the construction of microcircuits. The bi-layer anti-reflection coating features a first layer, an absorption layer, disposed on a second layer, a dielectric layer, which is then disposed between a substrate and a photoresist layer. The dielectric/absorption layer comprises one combination selected from Ta/Al2O3, Ta/SiO2, Ta/TiO2, Ta/Ta2O5, Ta/Cr2O3, Ta/Si3N4, Ti/Al2O3, Ti/SiO2, Ti/TiO2, Ti/Ta2O5, Ti/Cr2O3, Ti/Si3N4, Cr/Al2O3, Cr/SiO2, Cr/TiO2, Cr/Ta2O5, Cr/Cr2O3, Cr/Si3N4, Al/Al2O3, Al/TiO2, Al/Ta2O5, Al/Cr2O3, Al/Si3N4, Ni/Al2O3, Ni/SiO2, Ni/TiO2, Ni/Ta2O5, Ni/Cr2O3, Ni/Si3N4, Ir/Al2O3, Ir/SiO2, Ir/TiO2, Ir/Ta2O5, Ir/Cr2O3, and Ir/Si3N4. At least the absorption and dielectric layers can be formed using vacuum deposition.

Abstract: A method of making a magnetic head assembly wherein the magnetic head assembly has a write head with a pole tip includes the steps of forming a shaping layer on an underlying layer wherein the shaping layer has a side surface and a top surface, ion beam sputter depositing a ferromagnetic material layer on the underlying layer and on the side and top surfaces of the shaping layer and removing first and second portions of the ferromagnetic material layer from the underlying layer and the top surface of the shaping layer, respectively, leaving a remaining portion of the ferromagnetic material layer on the side surface of the shaping layer which is the aforementioned pole tip.

Abstract: An isotropic deposition method for trench narrowing of thin film magnetic write head features to be created by reactive ion etching. According to the method, a photolithographically defined photoresist trench is formed over a hardmask and underlying polymer layer as part of tri-layer resist process. Instead of performing the usual hardmask and polymer etching steps using the photoresist mask pattern, a spacer layer is deposited isotropically or directionally at an angle to cover the vertical side walls of the trench. The spacer layer is etchable by the hardmask etch process but resistant to the polymer etch process. When the hardmask etch process is performed, the spacer layer material applied to the trench side walls remains intact, thereby defining a narrowed trench that is extended by the subsequent base layer etch process.