Abstract: A device including a layered heterostructure with an oxygen-containing material, with a carbon layer and an amorphous oxygen diffusion barrier protecting the carbon layer from etching by oxygen. One or more of a metal, a carbide or an oxide may be in contact with the amorphous oxygen diffusion barrier that has the lowest free energy of oxide formation in the device. Various devices are disclosed as are varieties of carbon allotropes. Methods of protecting carbon, such as diamond from the oxygen etching in processes such as device manufacture are also disclosed.

Abstract: A device including a layered heterostructure with an oxygen-containing material, with a carbon layer and an amorphous oxygen diffusion barrier protecting the carbon layer from etching by oxygen. One or more of a metal, a carbide or an oxide may be in contact with the amorphous oxygen diffusion barrier that has the lowest free energy of oxide formation in the device. Various devices are disclosed as are varieties of carbon allotropes. Methods of protecting carbon, such as diamond from the oxygen etching in processes such as device manufacture are also disclosed.

Abstract: Extremely smooth (6 nm roughness) and continuous ultrananocrystalline diamond (UNCD) thin films were achieved by microwave plasma chemical vapor deposition using a thin 10 nm tungsten (W) interlayer between the silicon (Si) substrate and the diamond film. The W interlayer significantly increased the initial UNCD nucleation density to >1012 sites/cm2, thereby lowering the surface roughness and eliminating interfacial voids. A method is also disclosed to make various articles.

Abstract: In accordance with the principles of the present invention, an user identification system for a fitness trainer is provided. An operating system architecture for the fitness trainer includes a hardware circuit board, a processor in communication with the hardware circuit board, and memory in communication with the hardware circuit board and the processor. A biometric capture mechanism in communication with the processor and the memory.

Abstract: An ultrananocrystalline diamond (UNCD) having an average grain size between 3 and 5 nanometers (nm) with not more than about 8% by volume diamond having an average grain size larger than 10 nm. A method of manufacturing UNCD film is also disclosed in which a vapor of acetylene and hydrogen in an inert gas other than He wherein the volume ratio of acetylene to hydrogen is greater than 0.35 and less than 0.85, with the balance being an inert gas, is subjected to a suitable amount of energy to fragment at least some of the acetylene to form a UNCD film having an average grain size of 3 to 5 nm with not more than about 8% by volume diamond having an average grain size larger than 10 nm.

Abstract: An elliptical exercise device includes a frame having a first pivot axis and a longitudinal axis, at least one foot link and at least one swing arm. The foot link is coupled to the frame and is constrained to move in an orbital path approximately parallel to the longitudinal axis. The swing arm is also coupled to the frame and has a reciprocating movement whereby a natural “stride” movement of the arm of a user is replicated. The swing arm operates independently from the foot link. The natural “stride” movement of the arm of the user grasping the arm link follows a generally concave motion relative to the ground. The length of the movement of the arm of the user is defined by the user. A different resistive load can be applied on the arm apparatus than on the foot links.

Abstract: An ultrananocrystalline diamond (UNCD) having an average grain size between 3 and 5 nanometers (nm) with not more than about 8% by volume diamond having an average grain size larger than 10 nm. A method of manufacturing UNCD film is also disclosed in which a vapor of acetylene and hydrogen in an inert gas other than He wherein the volume ratio of acetylene to hydrogen is greater than 0.35 and less than 0.85, with the balance being an inert gas, is subjected to a suitable amount of energy to fragment at least some of the acetylene to form a UNCD film having an average grain size of 3 to 5 nm with not more than about 8% by volume diamond having an average grain size larger than 10 nm.

Abstract: An ultrananocrystalline diamond (UNCD) having an average grain size between 3 and 5 nanometers (nm) with not more than about 8% by volume diamond having an average grain size larger than 10 nm. A method of manufacturing UNCD film is also disclosed in which a vapor of acetylene and hydrogen in an inert gas other than He wherein the volume ratio of acetylene to hydrogen is greater than 0.35 and less than 0.85, with the balance being an inert gas, is subjected to a suitable amount of energy to fragment at least some of the acetylene to form a UNCD film having an average grain size of 3 to 5 nm with not more than about 8% by volume diamond having an average grain size larger than 10 nm.