Abstract: A method of manufacturing a drawer box having an integrated file hanging system. A hanger track is provided with a barbed mounting rib for engagement into a groove cut into the long edge of a blank. A vinyl laminate is applied to the blank over the top edge and the face that will become the exterior face of the drawer box and the hanger track is pressed into the groove. The drawer blank is processed through the V-groover with the hanger track already in position along the top edge, to mitre the drawer track at the same time as the drawer sides. In the preferred embodiment a bead is formed along the top edge of the mounting track and the cross bar is provided with a complementary hook structure, so that it can be positively engaged to the mounting track.

Abstract: The invention provides a process for plasma etching silicon carbide with selectivity to an overlapping and/or underlying dielectric layer of material. The etching gas includes a hydrogen-containing fluorocarbon gas such as CH3F, an oxygen-containing gas such as O2 and an optional carrier gas such as Ar. The dielectric material can comprise silicon dioxide, silicon nitride, silicon oxynitride or various low-k dielectric materials including organic low-k materials. In order to achieve a desired selectivity to such dielectric materials, the plasma etch gas chemistry is selected to achieve a desired etch rate of the silicon carbide while etching the dielectric material at a slower rate. The process can be used to selectively etch a hydrogenated silicon carbide etch stop layer or silicon carbide substrates.

Abstract: The invention provides a process for plasma etching silicon carbide with selectivity to an overlapping and/or underlying dielectric layer of material. The etching gas includes a hydrogen-containing fluorocarbon gas such as CH3F, an oxygen-containing gas such as O2 and an optional carrier gas such as Ar. The dielectric material can comprise silicon dioxide, silicon nitride, silicon oxynitride or various low-k dielectric materials including organic low-k materials. In order to achieve a desired selectivity to such dielectric materials, the plasma etch gas chemistry is selected to achieve a desired etch rate of the silicon carbide while etching the dielectric material at a slower rate. The process can be used to selectively etch a hydrogenated silicon carbide etch stop layer or silicon carbide substrates.

Abstract: Disclosed is a high temperature insertion type flow element and mounting extension assembly for a gas flow measuring device. Designed to overcome the drawbacks associated with compensating for differential thermal expansion between the element and the duct wall, the element consists of an otherwise conventional insertion type flow element, that incorporates the use of a mounting extension assembly and an expansion fitting. The mounting extension positions the element head in an offset manner from the gas duct, placing the element head in a position away from any insulating materials encasing the duct, allowing for convenient access to the instrumentation and cleaning ports. The expansion fitting stabilizes the element tubes within the duct while absorbing any differential thermal expansion.

Abstract: A vending machine (10) including a cabinet (12) having therein a storage compartment (21) and product extraction means (20) including a base (29) operatively connected to the cabinet for pivoting about vertical axis (27), first link means (25a) horizontally pivoted to the base, second link means (25b) horizontally pivoted to the other end of the first link, actuator for respectively pivoting the base, first link and second link, and coupling means operatively connected (through guide head (33)) to the other end of the second link means (25b) for coupling with a selected product in the storage compartment (21) for delivery to a product station, the extraction means (20) being controlled by control means (15) after product selection by a customer.

Abstract: A computed tomography system having a fourfold improvement in both short-and long-term beam position stability. A beam-position detector is located at a peripheral edge of the primary fan beam and is fixed relative to the primary detectors so as to indicate beam position on the primary detectors. The beam-position detector is oriented so that its maximum sensitivity to beam motion is in the direction of beam movement due to focal spot drift due to thermal effects and gravity. Short-term focal spot drift is detected by a secondary beam out of the primary fan beam and is corrected in real time by adjusting the position of a collimator for the primary beam. Long-term changes in the focal spot position are corrected by using information from the beam-position detector to recalibrate the focal spot-beam collimator data set.

Abstract: An improved tongue scraper or oral hygiene tool is designed to most effectively and harmlessly remove plaque, tartar, bacteria, dead tissue, food debris, etc. from the tongue. The tool is made of a nonporous substance capable of withstanding high temperatures during repeated sterilization such as metal, and preferably stainless steel. The tool includes unique curves and smooth edges designed to define a working edge contoured similar to that of the tongue and having a nongagging and self-cleaning profile and size.

Abstract: An improved tongue scraper or oral hygiene tool is designed to most effectively and harmlessly remove plaque, tartar, bacteria, dead tissue, food debris, etc. from the tongue. The tool is made of a nonporous substance capable of withstanding high temperatures during repeated sterilization such as metal, and preferably stainless steel. The tool includes unique curves and smooth edges designed to define a working edge contoured similar to that of the tongue and having a nongagging and self-cleaning profile and size.