Patents by Inventor James Brian Webb

James Brian Webb has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Molecular beam epitaxy (MBE) growth of semi-insulating C-doped GaN
    Patent number: 6544867
    Abstract: A method of growing semi-insulating GaN epilayers by ammonia-molecular beam epitaxy (MBE) through intentional doping with carbon is described. Thick GaN layers of high resistivity are an important element in GaN based heterostructure field-effect transistors. A methane ion source is preferably used as the carbon dopant source.
    Type: Grant
    Filed: June 9, 2000
    Date of Patent: April 8, 2003
    Assignee: National Research Council of Canada
    Inventors: James Brian Webb, Haipeng Tang