Patents by Inventor James Buff
James Buff has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10217601Abstract: An ion source includes an ion source chamber having a longitudinal axis, the ion source chamber operative to define a plasma therein. The ion source also includes a split solenoid assembly comprising a first solenoid and a second solenoid that are mutually disposed along opposite sides of the ion source chamber, where each of the first solenoid and second solenoid comprises a metal member having a long axis parallel to the longitudinal axis of the ion source chamber, and a main coil having a coil axis parallel to the long axis and comprising a plurality of windings that circumscribe the metal member. The main coil defines a coil footprint that is larger than an ion source chamber footprint of the ion source chamber.Type: GrantFiled: March 22, 2018Date of Patent: February 26, 2019Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventor: James Buff
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Publication number: 20180218876Abstract: An ion source includes an ion source chamber having a longitudinal axis, the ion source chamber operative to define a plasma therein. The ion source also includes a split solenoid assembly comprising a first solenoid and a second solenoid that are mutually disposed along opposite sides of the ion source chamber, where each of the first solenoid and second solenoid comprises a metal member having a long axis parallel to the longitudinal axis of the ion source chamber, and a main coil having a coil axis parallel to the long axis and comprising a plurality of windings that circumscribe the metal member. The main coil defines a coil footprint that is larger than an ion source chamber footprint of the ion source chamber.Type: ApplicationFiled: March 22, 2018Publication date: August 2, 2018Applicant: Varian Semiconductor Equipment Associates, Inc.Inventor: James Buff
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Patent number: 9928988Abstract: An ion source includes an ion source chamber having a longitudinal axis, the ion source chamber operative to define a plasma therein. The ion source also includes a split solenoid assembly comprising a first solenoid and a second solenoid that are mutually disposed along opposite sides of the ion source chamber, where each of the first solenoid and second solenoid comprises a metal member having a long axis parallel to the longitudinal axis of the ion source chamber, and a main coil having a coil axis parallel to the long axis and comprising a plurality of windings that circumscribe the metal member. The main coil defines a coil footprint that is larger than an ion source chamber footprint of the ion source chamber.Type: GrantFiled: March 13, 2013Date of Patent: March 27, 2018Assignee: Varian Semiconductor Equipment Associates, Inc.Inventor: James Buff
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Publication number: 20140261179Abstract: An ion source includes an ion source chamber having a longitudinal axis, the ion source chamber operative to define a plasma therein. The ion source also includes a split solenoid assembly comprising a first solenoid and a second solenoid that are mutually disposed along opposite sides of the ion source chamber, where each of the first solenoid and second solenoid comprises a metal member having a long axis parallel to the longitudinal axis of the ion source chamber, and a main coil having a coil axis parallel to the long axis and comprising a plurality of windings that circumscribe the metal member. The main coil defines a coil footprint that is larger than an ion source chamber footprint of the ion source chamber.Type: ApplicationFiled: March 13, 2013Publication date: September 18, 2014Applicant: Varian Semiconductor Equipment Associates, Inc.Inventor: James Buff
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Publication number: 20100200768Abstract: Techniques for improving extracted ion beam quality using high-transparency electrodes are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation. The apparatus may comprise an ion source for generating an ion beam, wherein the ion source comprises a faceplate with an aperture for the ion beam to travel therethrough. The apparatus may also comprise a set of extraction electrodes comprising at least a suppression electrode and a high-transparency ground electrode, wherein the set of extraction electrodes may extract the ion beam from the ion source via the faceplate, and wherein the high-transparency ground electrode may be configured to optimize gas conductance between the suppression electrode and the high-transparency ground electrode for improved extracted ion beam quality.Type: ApplicationFiled: February 12, 2009Publication date: August 12, 2010Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: JAMES BUFF, SVETLANA RADOVANOV, BON-WOONG KOO, WILHELM PLATOW, FRANK SINCLAIR, JEFFREY D. LISCHER, CRAIG CHANEY, STEVEN BORICHEVSKY, ERIC R. COBB, MAYUR JAGTAP, KENNETH PURSER, VICTOR M. BENVENISTE, SHARDUL S. PATEL
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Patent number: 7459692Abstract: A method and apparatus are disclosed for improving space charge neutralization adjacent a magnet of an ion implanter by confining the electrons inside a magnetic region thereof to reduce electron losses and therefore improve the transport efficiency of a low energy beam. A magnetic pole member for a magnet of an ion implanter is provided that includes an outer surface having a plurality of magnetic field concentration members that form magnetic field concentrations adjacent the magnetic pole member. Electrons that encounter this increased magnetic field are repelled back along the same magnetic field line rather than allowed to escape. An analyzer magnet and ion implanter including the magnet pole are also provided so that a method of improving low energy ion beam space charge neutralization in an ion implanter is realized.Type: GrantFiled: November 10, 2005Date of Patent: December 2, 2008Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Anthony Renau, Joseph C. Olson, Shengwu Chang, James Buff
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Patent number: 7402816Abstract: One or more electron sources are utilized to inject electrons into an ion beam being transported between the polepieces of a magnet. In some embodiments, the electron sources are located in cavities in one or both polepieces of the magnet. In other embodiments, a radio frequency or microwave plasma flood gun is located in a cavity in at least one of the polepieces or between the polepieces.Type: GrantFiled: November 17, 2005Date of Patent: July 22, 2008Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Anthony Renau, Donna L. Smatlak, James Buff, Eric Hermanson
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Publication number: 20070164229Abstract: A technique for providing a segmented electrostatic lens in an ion implanter is disclosed. In one particular exemplary embodiment, the technique may be realized as an electrostatic lens for use in an ion implanter. The lens may comprise an entrance electrode biased at a first voltage potential, wherein an ion beam enters the electrostatic lens through the entrance electrode. The lens may also comprise an exit electrode biased at a second voltage potential, wherein the ion beam exits the electrostatic lens through the exit electrode. The lens may further comprise a suppression electrode located between the entrance electrode and the exit electrode, the suppression electrode comprising a plurality of segments that are independently biased to manipulate an energy and a shape of the ion beam.Type: ApplicationFiled: April 28, 2006Publication date: July 19, 2007Inventors: Svetlana Radovanov, Anthony Renau, James Buff
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Publication number: 20070108390Abstract: A technique for shaping a ribbon-shaped ion beam is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for shaping a ribbon-shaped ion beam. The apparatus may comprise an electrostatic lens having a substantially rectangular aperture for a ribbon-shaped ion beam to pass through, wherein a plurality of focusing elements are positioned along short edges of the aperture, and wherein each focusing element is separately biased and oriented to shape the ribbon-shaped ion beam.Type: ApplicationFiled: September 29, 2006Publication date: May 17, 2007Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Svetlana Radovanov, Peter Kellerman, Victor Benveniste, Robert Lindberg, Kenneth Purser, Tyler Rockwell, James Buff, Anthony Renau
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Publication number: 20060236931Abstract: A plasma doping apparatus includes a chamber and a plasma source that generates ions in the chamber from a dopant gas. A grating is positioned in the chamber. A platen for supporting a target is positioned in the chamber. At least one of the grating and the target are oriented so that dopant ions extracted from the grating impact the target at a non-normal angle of incidence.Type: ApplicationFiled: April 25, 2005Publication date: October 26, 2006Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: Vikram Singh, James Buff, Rajesh Dorai
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Publication number: 20060169912Abstract: One or more electron sources are utilized to inject electrons into an ion beam being transported between the polepieces of a magnet. In some embodiments, the electron sources are located in cavities in one or both polepieces of the magnet. In other embodiments, a radio frequency or microwave plasma flood gun is located in a cavity in at least one of the polepieces or between the polepieces.Type: ApplicationFiled: November 17, 2005Publication date: August 3, 2006Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Anthony Renau, Donna Smatlak, James Buff, Eric Hermanson
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Publication number: 20060169911Abstract: A method and apparatus are disclosed for improving space charge neutralization adjacent a magnet of an ion implanter by confining the electrons inside a magnetic region thereof to reduce electron losses and therefore improve the transport efficiency of a low energy beam. A magnetic pole member for a magnet of an ion implanter is provided that includes an outer surface having a plurality of magnetic field concentration members that form magnetic field concentrations adjacent the magnetic pole member. Electrons that encounter this increased magnetic field are repelled back along the same magnetic field line rather than allowed to escape. An analyzer magnet and ion implanter including the magnet pole are also provided so that a method of improving low energy ion beam space charge neutralization in an ion implanter is realized.Type: ApplicationFiled: November 10, 2005Publication date: August 3, 2006Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Anthony Renau, Joseph Olson, Shengwu Chang, James Buff
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Publication number: 20060043316Abstract: An ion implanter includes an ion source for generating an ion beam, a target site for supporting a target for ion implantation and a beamline defining a beam path between the ion source and the target site. In one aspect, a magnetic steerer is disposed between the ion source and the target site for at least partially correcting unwanted deviation of the ion beam from the beam path. The magnetic steerer may position the ion beam relative to an entrance aperture of an ion optical element. In another aspect, the beamline includes a deceleration stage for decelerating the ion beam from a first transport energy to a second transport energy. The deceleration stage includes two or more electrodes, wherein at least one of the electrodes is a grid electrode positioned in the beam path.Type: ApplicationFiled: June 10, 2003Publication date: March 2, 2006Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Reuel Liebert, Harold Persing, James Buff