Patents by Inventor James Buff

James Buff has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10217601
    Abstract: An ion source includes an ion source chamber having a longitudinal axis, the ion source chamber operative to define a plasma therein. The ion source also includes a split solenoid assembly comprising a first solenoid and a second solenoid that are mutually disposed along opposite sides of the ion source chamber, where each of the first solenoid and second solenoid comprises a metal member having a long axis parallel to the longitudinal axis of the ion source chamber, and a main coil having a coil axis parallel to the long axis and comprising a plurality of windings that circumscribe the metal member. The main coil defines a coil footprint that is larger than an ion source chamber footprint of the ion source chamber.
    Type: Grant
    Filed: March 22, 2018
    Date of Patent: February 26, 2019
    Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventor: James Buff
  • Publication number: 20180218876
    Abstract: An ion source includes an ion source chamber having a longitudinal axis, the ion source chamber operative to define a plasma therein. The ion source also includes a split solenoid assembly comprising a first solenoid and a second solenoid that are mutually disposed along opposite sides of the ion source chamber, where each of the first solenoid and second solenoid comprises a metal member having a long axis parallel to the longitudinal axis of the ion source chamber, and a main coil having a coil axis parallel to the long axis and comprising a plurality of windings that circumscribe the metal member. The main coil defines a coil footprint that is larger than an ion source chamber footprint of the ion source chamber.
    Type: Application
    Filed: March 22, 2018
    Publication date: August 2, 2018
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventor: James Buff
  • Patent number: 9928988
    Abstract: An ion source includes an ion source chamber having a longitudinal axis, the ion source chamber operative to define a plasma therein. The ion source also includes a split solenoid assembly comprising a first solenoid and a second solenoid that are mutually disposed along opposite sides of the ion source chamber, where each of the first solenoid and second solenoid comprises a metal member having a long axis parallel to the longitudinal axis of the ion source chamber, and a main coil having a coil axis parallel to the long axis and comprising a plurality of windings that circumscribe the metal member. The main coil defines a coil footprint that is larger than an ion source chamber footprint of the ion source chamber.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: March 27, 2018
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventor: James Buff
  • Publication number: 20140261179
    Abstract: An ion source includes an ion source chamber having a longitudinal axis, the ion source chamber operative to define a plasma therein. The ion source also includes a split solenoid assembly comprising a first solenoid and a second solenoid that are mutually disposed along opposite sides of the ion source chamber, where each of the first solenoid and second solenoid comprises a metal member having a long axis parallel to the longitudinal axis of the ion source chamber, and a main coil having a coil axis parallel to the long axis and comprising a plurality of windings that circumscribe the metal member. The main coil defines a coil footprint that is larger than an ion source chamber footprint of the ion source chamber.
    Type: Application
    Filed: March 13, 2013
    Publication date: September 18, 2014
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventor: James Buff
  • Publication number: 20100200768
    Abstract: Techniques for improving extracted ion beam quality using high-transparency electrodes are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation. The apparatus may comprise an ion source for generating an ion beam, wherein the ion source comprises a faceplate with an aperture for the ion beam to travel therethrough. The apparatus may also comprise a set of extraction electrodes comprising at least a suppression electrode and a high-transparency ground electrode, wherein the set of extraction electrodes may extract the ion beam from the ion source via the faceplate, and wherein the high-transparency ground electrode may be configured to optimize gas conductance between the suppression electrode and the high-transparency ground electrode for improved extracted ion beam quality.
    Type: Application
    Filed: February 12, 2009
    Publication date: August 12, 2010
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: JAMES BUFF, SVETLANA RADOVANOV, BON-WOONG KOO, WILHELM PLATOW, FRANK SINCLAIR, JEFFREY D. LISCHER, CRAIG CHANEY, STEVEN BORICHEVSKY, ERIC R. COBB, MAYUR JAGTAP, KENNETH PURSER, VICTOR M. BENVENISTE, SHARDUL S. PATEL
  • Patent number: 7459692
    Abstract: A method and apparatus are disclosed for improving space charge neutralization adjacent a magnet of an ion implanter by confining the electrons inside a magnetic region thereof to reduce electron losses and therefore improve the transport efficiency of a low energy beam. A magnetic pole member for a magnet of an ion implanter is provided that includes an outer surface having a plurality of magnetic field concentration members that form magnetic field concentrations adjacent the magnetic pole member. Electrons that encounter this increased magnetic field are repelled back along the same magnetic field line rather than allowed to escape. An analyzer magnet and ion implanter including the magnet pole are also provided so that a method of improving low energy ion beam space charge neutralization in an ion implanter is realized.
    Type: Grant
    Filed: November 10, 2005
    Date of Patent: December 2, 2008
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Anthony Renau, Joseph C. Olson, Shengwu Chang, James Buff
  • Patent number: 7402816
    Abstract: One or more electron sources are utilized to inject electrons into an ion beam being transported between the polepieces of a magnet. In some embodiments, the electron sources are located in cavities in one or both polepieces of the magnet. In other embodiments, a radio frequency or microwave plasma flood gun is located in a cavity in at least one of the polepieces or between the polepieces.
    Type: Grant
    Filed: November 17, 2005
    Date of Patent: July 22, 2008
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Anthony Renau, Donna L. Smatlak, James Buff, Eric Hermanson
  • Publication number: 20070164229
    Abstract: A technique for providing a segmented electrostatic lens in an ion implanter is disclosed. In one particular exemplary embodiment, the technique may be realized as an electrostatic lens for use in an ion implanter. The lens may comprise an entrance electrode biased at a first voltage potential, wherein an ion beam enters the electrostatic lens through the entrance electrode. The lens may also comprise an exit electrode biased at a second voltage potential, wherein the ion beam exits the electrostatic lens through the exit electrode. The lens may further comprise a suppression electrode located between the entrance electrode and the exit electrode, the suppression electrode comprising a plurality of segments that are independently biased to manipulate an energy and a shape of the ion beam.
    Type: Application
    Filed: April 28, 2006
    Publication date: July 19, 2007
    Inventors: Svetlana Radovanov, Anthony Renau, James Buff
  • Publication number: 20070108390
    Abstract: A technique for shaping a ribbon-shaped ion beam is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for shaping a ribbon-shaped ion beam. The apparatus may comprise an electrostatic lens having a substantially rectangular aperture for a ribbon-shaped ion beam to pass through, wherein a plurality of focusing elements are positioned along short edges of the aperture, and wherein each focusing element is separately biased and oriented to shape the ribbon-shaped ion beam.
    Type: Application
    Filed: September 29, 2006
    Publication date: May 17, 2007
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Svetlana Radovanov, Peter Kellerman, Victor Benveniste, Robert Lindberg, Kenneth Purser, Tyler Rockwell, James Buff, Anthony Renau
  • Publication number: 20060236931
    Abstract: A plasma doping apparatus includes a chamber and a plasma source that generates ions in the chamber from a dopant gas. A grating is positioned in the chamber. A platen for supporting a target is positioned in the chamber. At least one of the grating and the target are oriented so that dopant ions extracted from the grating impact the target at a non-normal angle of incidence.
    Type: Application
    Filed: April 25, 2005
    Publication date: October 26, 2006
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Vikram Singh, James Buff, Rajesh Dorai
  • Publication number: 20060169912
    Abstract: One or more electron sources are utilized to inject electrons into an ion beam being transported between the polepieces of a magnet. In some embodiments, the electron sources are located in cavities in one or both polepieces of the magnet. In other embodiments, a radio frequency or microwave plasma flood gun is located in a cavity in at least one of the polepieces or between the polepieces.
    Type: Application
    Filed: November 17, 2005
    Publication date: August 3, 2006
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Anthony Renau, Donna Smatlak, James Buff, Eric Hermanson
  • Publication number: 20060169911
    Abstract: A method and apparatus are disclosed for improving space charge neutralization adjacent a magnet of an ion implanter by confining the electrons inside a magnetic region thereof to reduce electron losses and therefore improve the transport efficiency of a low energy beam. A magnetic pole member for a magnet of an ion implanter is provided that includes an outer surface having a plurality of magnetic field concentration members that form magnetic field concentrations adjacent the magnetic pole member. Electrons that encounter this increased magnetic field are repelled back along the same magnetic field line rather than allowed to escape. An analyzer magnet and ion implanter including the magnet pole are also provided so that a method of improving low energy ion beam space charge neutralization in an ion implanter is realized.
    Type: Application
    Filed: November 10, 2005
    Publication date: August 3, 2006
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Anthony Renau, Joseph Olson, Shengwu Chang, James Buff
  • Publication number: 20060043316
    Abstract: An ion implanter includes an ion source for generating an ion beam, a target site for supporting a target for ion implantation and a beamline defining a beam path between the ion source and the target site. In one aspect, a magnetic steerer is disposed between the ion source and the target site for at least partially correcting unwanted deviation of the ion beam from the beam path. The magnetic steerer may position the ion beam relative to an entrance aperture of an ion optical element. In another aspect, the beamline includes a deceleration stage for decelerating the ion beam from a first transport energy to a second transport energy. The deceleration stage includes two or more electrodes, wherein at least one of the electrodes is a grid electrode positioned in the beam path.
    Type: Application
    Filed: June 10, 2003
    Publication date: March 2, 2006
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Reuel Liebert, Harold Persing, James Buff