Patents by Inventor James Burdorf
James Burdorf has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6985847Abstract: A computer-implemented method for matching parameters of outputs generated by a first and second process. The first process generates a first output having a characteristic measurable by a first parameter, and the second process generates a second output having the characteristic measurable by a second parameter. A computer having a processing unit and memory is provided. The computer generates a first model of the first parameter for the first process and a second model of the second parameter for the second process. The computer generates a first simulated output of the first process using the first model. A correction, which is a function of the second model and which compensates for the effect of the second process on the second parameter, is applied to the first simulated output to obtain a corrected output. The second process is applied to the corrected output to generate with the computer thereby a third output matching the first parameter of the first output.Type: GrantFiled: August 29, 2002Date of Patent: January 10, 2006Assignee: Micron Technology, Inc.Inventors: James Burdorf, Christophe Pierrat
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Publication number: 20040179726Abstract: The present invention provides a process for performing automatic inspection of advanced design photomasks. In a preferred embodiment, an aerial image of a portion of a photomask is generated. A simulated image corresponding to original pattern data is also generated. The aerial image and simulated image are then compared and discrepancies are detected as possible defects.Type: ApplicationFiled: March 26, 2004Publication date: September 16, 2004Inventors: James Burdorf, Christophe Pierrat
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Methods and apparatus for determining optimum exposure threshold for a given photolithographic model
Publication number: 20030139833Abstract: A system and method for enhancing process latitude (tolerances) in the fabrication of devices and integrated circuits. A measuring point is selected corresponding to a feature of critical dimension. Then the pattern is convolved with the model, and its value and rate of change are calculated over a range of corresponding values of a first process parameter. Next, an optimum threshold having the largest rate of change, or contrast, is selected. Finally, proximity correction is performed using relevant parameters.Type: ApplicationFiled: February 3, 2003Publication date: July 24, 2003Applicant: Micron Technology, Inc.Inventors: Christophe Pierrat, James Burdorf -
Patent number: 6519501Abstract: A system and method for enhancing process latitude (tolerances) in the fabrication of devices and integrated circuits. A measuring point is selected corresponding to a feature of critical dimension. Then the pattern is convolved with the model, and its value and rate of change are calculated over a range of corresponding values of a first process parameter. Next, an optimum threshold having the largest rate of change, or contrast, is selected. Finally, proximity correction is performed using relevant parameters.Type: GrantFiled: January 23, 2001Date of Patent: February 11, 2003Assignee: Micron Technology, Inc.Inventors: Christophe Pierrat, James Burdorf
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Publication number: 20030014235Abstract: A computer-implemented method for matching parameters of outputs generated by a first and second process. The first process generates a first output having a characteristic measurable by a first parameter, and the second process generates a second output having the characteristic measurable by a second parameter. A computer having a processing unit and memory is provided. The computer generates a first model of the first parameter for the first process and a second model of the second parameter for the second process. The computer generates a first simulated output of the first process using the first model. A correction, which is a function of the second model and which compensates for the effect of the second process on the second parameter, is applied to the first simulated output to obtain a corrected output. The second process is applied to the corrected output to generate with the computer thereby a third output matching the first parameter of the first output.Type: ApplicationFiled: August 29, 2002Publication date: January 16, 2003Applicant: Micron Technology, Inc.Inventors: James Burdorf, Christophe Pierrat
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Patent number: 6463403Abstract: A computer-implemented method for matching parameters of outputs generated by a first and second process. The first process generates a first output having a characteristic measurable by a first parameter, and the second process generates a second output having the characteristic measurable by a second parameter. A computer having a processing unit and memory is provided. The computer generates a first model of the first parameter for the first process and a second model of the second parameter for the second process. The computer generates a first simulated output of the first process using the first model. A correction, which is a function of the second model and which compensates for the effect of the second process on the second parameter, is applied to the first simulated output to obtain a corrected output. The second process is applied to the corrected output to generate with the computer thereby a third output matching the first parameter of the first output.Type: GrantFiled: December 14, 1999Date of Patent: October 8, 2002Assignee: Micron Technology, Inc.Inventors: James Burdorf, Christophe Pierrat
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Publication number: 20010029403Abstract: A system and method for enhancing process latitude (tolerances) in the fabrication of devices and integrated circuits. A measuring point is selected corresponding to a feature of critical dimension. Then the pattern is convolved with the model, and its value and rate of change are calculated over a range of corresponding values of a first process parameter. Next, an optimum threshold having the largest rate of change, or contrast, is selected. Finally, proximity correction is performed using relevant parameters.Type: ApplicationFiled: January 23, 2001Publication date: October 11, 2001Applicant: Micron Technology, Inc.Inventors: Christophe Pierrat, James Burdorf
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Patent number: 6272236Abstract: An improved technique for inspecting photomasks employs simulated images of the resist pattern. A simulated image of an original pattern is compared to a simulated image generated from a pattern captured from a photomask manufactured from the original pattern. Alternatively, simulated images generated from captured data from two different instances of the same original pattern formed in a photomask are compared.Type: GrantFiled: July 18, 2000Date of Patent: August 7, 2001Assignee: Micron Technology, Inc.Inventors: Christophe Pierrat, James Burdorf
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Methods and apparatus for determining optimum exposure threshold for a given photolithographic model
Patent number: 6178360Abstract: A system and method for enhancing process latitude (tolerances) in the fabrication of devices and integrated circuits. A measuring point is selected corresponding to a feature of critical dimension. Then the pattern is convolved with the model, and its value and rate of change are calculated over a range of corresponding values of a first process parameter. Next, an optimum threshold having the largest rate of change, or contrast, is selected. Finally, proximity correction is performed using relevant parameters.Type: GrantFiled: February 5, 1998Date of Patent: January 23, 2001Assignee: Micron Technology, Inc.Inventors: Christophe Pierrat, James Burdorf -
Patent number: 6091845Abstract: An improved technique for inspecting photomasks employs simulated images of the resist pattern. A simulated image of an original pattern is compared to a simulated image generated from a pattern captured from a photomask manufactured from the original pattern. Alternatively, simulated images generated from captured data from two different instances of the same original pattern formed in a photomask are compared.Type: GrantFiled: February 24, 1998Date of Patent: July 18, 2000Assignee: Micron Technology, Inc.Inventors: Christophe Pierrat, James Burdorf
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Patent number: 6033814Abstract: A computer-implemented method for matching parameters of outputs generated by a first and second process. The first process generates a first output having a characteristic measurable by a first parameter, and the second process generates a second output having the characteristic measurable by a second parameter. A computer having a processing unit and memory is provided. The computer generates a first model of the first parameter for the first process and a second model of the second parameter for the second process. The computer generates a first simulated output of the first process using the first model. A correction, which is a function of the second model and which compensates for the effect of the second process on the second parameter, is applied to the first simulated output to obtain a corrected output. The second process is applied to the corrected output to generate with the computer thereby a third output matching the first parameter of the first output.Type: GrantFiled: February 26, 1998Date of Patent: March 7, 2000Assignee: Micron Technology, Inc.Inventors: James Burdorf, Christophe Pierrat
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Patent number: 5795688Abstract: The present invention provides a process for performing automatic inspection of advanced design photomasks. In a preferred embodiment, an aerial image of a portion of a photomask is generated. A simulated image corresponding to original pattern data is also generated. The aerial image and simulated image are then compared and discrepancies are detected as possible defects.Type: GrantFiled: August 14, 1996Date of Patent: August 18, 1998Assignee: Micron Technology, Inc.Inventors: James Burdorf, Christophe Pierrat