Patents by Inventor James C. Cates

James C. Cates has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5956215
    Abstract: A reproducing element for use in a high density coupled element read head, and a method for manufacturing such an element are provided. The reproducing element includes an insulative layer and a magnetoresistive element in contact with the insulative layer. The reproducing element also includes a support element in contact with the magnetoresistive layer, the support element having a hardness sufficient to substantially prevent damage to the magnetoresistive element during mechanical processing and during movement of a tape across a surface of the magnetoresistive element. The method includes depositing an insulative layer on a substrate, and depositing a magnetoresistive material on the insulative layer, the magnetoresistive material forming a read element.
    Type: Grant
    Filed: August 12, 1997
    Date of Patent: September 21, 1999
    Assignee: Storage Technology Corporation
    Inventors: Joseph M. Schmalhorst, Joseph E. Torline, James C. Cates
  • Patent number: 5855056
    Abstract: An improved method for forming a magnetic head which efficiently allows multiple head elements of varying gap length to be located on a common wafer. A multiple gap magnetic head is formed by depositing a first magnetic layer on a wafer such that the first layer extends across all the head element segments Two separate insulating layers are individually deposited over the first layer, with a thin etch stop barrier layer being deposited between the insulation layers over heads which are to have a narrower gap length. The top insulation layer covering the etch stop barrier layer is then removed, and a second magnetic layer deposited over all the head element segments on the wafer. In addition to simplifying the fabrication process, the etch stop layer allows tight processing control to be maintained when creating the different gap lengths.
    Type: Grant
    Filed: November 20, 1997
    Date of Patent: January 5, 1999
    Assignee: Storage Technology Corporation
    Inventor: James C. Cates
  • Patent number: 5811018
    Abstract: The present invention discloses an improved structure and method for forming an interleaved magnetic head. In one aspect, an interleaved magnetic head is formed by providing a wafer comprising a first thick magnetic layer extending across read and write segments of the head and patterned to form a first read shield and a first write pole and, in a second step, a second thick magnetic layer is formed across the read and write segments of the head at substantially the same time to provide substantially all of a second read shield and substantially all of a second write pole. A write gap between the write poles may be formed in such a manner as to have a different thickness than the read gap between the read shields. In addition, tight processing control is maintained over the critical read gap thickness.
    Type: Grant
    Filed: January 31, 1996
    Date of Patent: September 22, 1998
    Assignee: Storage Technology Corporation
    Inventors: Diane C. Ewasko, James C. Cates
  • Patent number: 5784772
    Abstract: The present invention discloses an improved structure and method of forming a dual magnetoresistive element head. The dual magnetoresistive element head includes a first and a second magnetoresistive element and leads extending from opposite end segments of each magnetoresistive element. In one aspect of the present invention, the first and second magnetoresistive elements and the leads are simultaneously formed from a wafer comprising a first and a second magnetic layer separated by an intermediate gap layer.
    Type: Grant
    Filed: December 21, 1995
    Date of Patent: July 28, 1998
    Assignee: Storage Technology Corporation
    Inventors: Diane C. Ewasko, James C. Cates, Richard W. Crowell, Richard H. Dee