Abstract: Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack; a first gate above the quantum well stack, wherein the first gate includes a first gate metal and a first gate dielectric; and a second gate above the quantum well stack, wherein the second gate includes a second gate metal and a second gate dielectric, and the first gate is at least partially between a portion of the second gate and the quantum well stack.

Abstract: Quantum dot devices with three of more accumulation gates provided over a single row of a quantum dot formation region are disclosed. Each accumulation gate is electrically coupled to a respective doped region. In this manner, multiple single electron transistors (SETs) are provided along the row. Side and/or center screening gates may be used to apply microwave pulses for qubit control and to control electrostatics so that source and drain regions of the multiple SETs with quantum dots formed along the single row of a quantum dot formation region are sufficiently isolated from one another. Such quantum dot devices provide strong spatial localization of the quantum dots, good control over quantum dot interactions and manipulation, good scalability in the number of quantum dots included in the device, and/or design flexibility in making electrical connections to the quantum dot devices to integrate the quantum dot devices in larger computing devices.

Abstract: The invention is a honeycomb structure suitable for use with cryogenic materials. In detail, the invention comprises a honeycomb sandwich structure 10 having a titanium core 14, a first face sheet 12 made of aluminum alloy suitable for high-temperature applications, and a second face sheet 16 made of titanium bonded together by a high-temperature thermoplastic adhesive. Preferably the core 14 is made of Ti-15V-3Cr-3Sn-3 aluminum, Ti-6Al-4V and/or Ti-3Al-2.5V. The first face sheet 12 is, preferably, made out of Al-8Fe-7Ce, Al-13Fe-4.6V, Al-1OFe-1Mo1V and Al-6Fe-6Ni-2Cr or other aluminum alloys suitable for use at temperatures in excess of 600.degree. F. The second face sheet 16 is, preferably, made of Ti-6Al-4V, Ti-6Al-2Sn-4Zr-2Mo or Ti-15V-3Cr-3Sn-3Al. Preferably, the adhesive 18a, 18b is a thermoplastic material such as polyetheretherketone, polyphenylquinoxaline or a polyamide-imide.