Patents by Inventor James C. Kim
James C. Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240110242Abstract: The present invention provides methods for sequencing and analysis of nucleic acids and determining that a subject is positive for a non-usual interstitial pneumonia subtype.Type: ApplicationFiled: March 9, 2023Publication date: April 4, 2024Inventors: Giulia C. Kennedy, James Diggans, Jing Huang, Yoonha Choi, Su Yeon Kim, Daniel Pankratz, Moraima Pagan
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Patent number: 9806111Abstract: Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may have one or more intermediate electrical contacts that are physically and electrically connected to sidewalls of the array of nanostructures. The contacts may allow different photo-active regions of the optoelectronic device to be independently controlled. For example, one color light may be emitted or detected independently of another using the same group of one or more nanostructures. The optoelectronic device may be a pixilated device that may serve as an LED display or imaging sensor. The pixilated device may have an array of nanostructures with alternating rows and columns of sidewall electrical contacts at different layers. A pixel may be formed at the intersection of a row contact and a column contact. As one example, a single group of one or more nanostructures has a blue sub-pixel, a green sub-pixel, and a red sub-pixel.Type: GrantFiled: January 16, 2014Date of Patent: October 31, 2017Assignee: Sundiode Inc.Inventors: James C. Kim, Sungsoo Yi, Danny E. Mars
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Publication number: 20140134769Abstract: Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may have one or more intermediate electrical contacts that are physically and electrically connected to sidewalls of the array of nanostructures. The contacts may allow different photo-active regions of the optoelectronic device to be independently controlled. For example, one color light may be emitted or detected independently of another using the same group of one or more nanostructures. The optoelectronic device may be a pixilated device that may serve as an LED display or imaging sensor. The pixilated device may have an array of nanostructures with alternating rows and columns of sidewall electrical contacts at different layers. A pixel may be formed at the intersection of a row contact and a column contact. As one example, a single group of one or more nanostructures has a blue sub-pixel, a green sub-pixel, and a red sub-pixel.Type: ApplicationFiled: January 16, 2014Publication date: May 15, 2014Applicant: Sundiode Inc.Inventors: James C. Kim, Sungsoo Yi, Danny E. Mars
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Patent number: 8659037Abstract: Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may have one or more intermediate electrical contacts that are physically and electrically connected to sidewalls of the array of nanostructures. The contacts may allow different photo-active regions of the optoelectronic device to be independently controlled. For example, one color light may be emitted or detected independently of another using the same group of one or more nanostructures. The optoelectronic device may be a pixilated device that may serve as an LED display or imaging sensor. The pixilated device may have an array of nanostructures with alternating rows and columns of sidewall electrical contacts at different layers. A pixel may be formed at the intersection of a row contact and a column contact. As one example, a single group of one or more nanostructures has a blue sub-pixel, a green sub-pixel, and a red sub-pixel.Type: GrantFiled: June 8, 2010Date of Patent: February 25, 2014Assignee: Sundiode Inc.Inventors: James C. Kim, Sungsoo Yi, Danny E. Mars
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Patent number: 8476637Abstract: Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may have a top electrical contact that is physically and electrically connected to sidewalls of the array of nanostructures (e.g., nanocolumns). The top electrical contact may be located such that light can enter or leave the nanostructures without passing through the top electrical contact. Therefore, the top electrical contact can be opaque to light having wavelengths that are absorbed or generated by active regions in the nanostructures. The top electrical contact can be made from a material that is highly conductive, as no tradeoff needs to be made between optical transparency and electrical conductivity. The device could be a solar cell, LED, photo-detector, etc.Type: GrantFiled: June 8, 2010Date of Patent: July 2, 2013Assignee: Sundiode Inc.Inventors: James C. Kim, Sungsoo Yi, Danny E. Mars
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Patent number: 8431817Abstract: Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may be a multi junction solar cell. The optoelectronic device may have a bi-layer electrical interconnect that is physically and electrically connected to sidewalls of the array of nanostructures. The optoelectronic device may be operated as a multi junction solar cell, wherein each junction is associated with one portion of the device. The bi-layer electrical interconnect allows current to pass from one portion to the next. Thus, the bi-layer electrical interconnect may serve as a replacement for a tunnel junction, which is used in some conventional multi junction solar cells.Type: GrantFiled: June 8, 2010Date of Patent: April 30, 2013Assignee: Sundiode Inc.Inventors: James C. Kim, Sungsoo Yi, Danny E. Mars
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Patent number: 8174025Abstract: A light emitting device includes a semiconductor structure having a light emitting layer disposed between an n-type region and a p-type region. A porous region is disposed between the light emitting layer and a contact electrically connected to one of the n-type region and the p-type region. The porous region scatters light away from the absorbing contact, which may improve light extraction from the device. In some embodiments the porous region is an n-type semiconductor material such as GaN or GaP.Type: GrantFiled: June 9, 2006Date of Patent: May 8, 2012Assignee: Philips Lumileds Lighting Company, LLCInventors: John E. Epler, Michael R. Krames, Hanmin Zhao, James C. Kim
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Publication number: 20120025169Abstract: Transistors and methods for forming transistors from groups of nanostructures are disclosed herein. The transistor may be formed from an array of nanostructures that are grown vertically on a substrate. The nanostructures may have lower, middle and upper segments that may be formed with different materials and/or doping to achieve desired effects. Collectively, the lower segments may form the source or drain, with the middle segments collectively forming the channel. Alternatively, the lower segments could collectively form the emitter or collector, with the middle segments collectively forming the base. Transistor electrodes may be planar metal structures that surround sidewalls of the nanostructures. The transistors may be Field Effect Transistors (FETs) or bipolar junction transistors (BJTs). Heterojunction bipolar junction transistors (HBTs) and high electron mobility transistors (HEMTs) are possible.Type: ApplicationFiled: August 2, 2010Publication date: February 2, 2012Applicant: SUNDIODE INC.Inventors: Danny E. Mars, James C. Kim, Sungsoo Yi
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Publication number: 20110299074Abstract: Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may have one or more intermediate electrical contacts that are physically and electrically connected to sidewalls of the array of nanostructures. The contacts may allow different photo-active regions of the optoelectronic device to be independently controlled. For example, one color light may be emitted or detected independently of another using the same group of one or more nanostructures. The optoelectronic device may be a pixilated device that may serve as an LED display or imaging sensor. The pixilated device may have an array of nanostructures with alternating rows and columns of sidewall electrical contacts at different layers. A pixel may be formed at the intersection of a row contact and a column contact. As one example, a single group of one or more nanostructures has a blue sub-pixel, a green sub-pixel, and a red sub-pixel.Type: ApplicationFiled: June 8, 2010Publication date: December 8, 2011Applicant: SUNDIODE INC.Inventors: James C. Kim, Sungsoo Yi, Danny E. Mars
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Publication number: 20110297214Abstract: Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may be a multi junction solar cell. The optoelectronic device may have a bi-layer electrical interconnect that is physically and electrically connected to sidewalls of the array of nanostructures. The optoelectronic device may be operated as a multi junction solar cell, wherein each junction is associated with one portion of the device. The bi-layer electrical interconnect allows current to pass from one portion to the next. Thus, the bi-layer electrical interconnect may serve as a replacement for a tunnel junction, which is used in some conventional multi junction solar cells.Type: ApplicationFiled: June 8, 2010Publication date: December 8, 2011Applicant: SUNDIODE INC.Inventors: James C. Kim, Sungsoo Yi, Danny E. Mars
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Publication number: 20110297913Abstract: Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may have a top electrical contact that is physically and electrically connected to sidewalls of the array of nanostructures (e.g., nanocolumns). The top electrical contact may be located such that light can enter or leave the nanostructures without passing through the top electrical contact. Therefore, the top electrical contact can be opaque to light having wavelengths that are absorbed or generated by active regions in the nanostructures. The top electrical contact can be made from a material that is highly conductive, as no tradeoff needs to be made between optical transparency and electrical conductivity. The device could be a solar cell, LED, photo-detector, etc.Type: ApplicationFiled: June 8, 2010Publication date: December 8, 2011Applicant: SUNDIODE INC.Inventors: James C. Kim, Sungsoo Yi, Danny E. Mars
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Patent number: 8026117Abstract: A semiconductor light emitting device includes an active region, an n-type region, and a p-type region comprising a portion that extends into the active region. The active region may include multiple quantum wells separated by barrier layers, and the p-type extension penetrates at least one of the quantum well layers. The extensions of the p-type region into the active region may provide uniform filling of carriers in the individual quantum wells of the active region by providing direct current paths into individual quantum wells. Such uniform filling may improve the operating efficiency at high current density by reducing the carrier density in the quantum wells closest to the bulk p-type region, thereby reducing the number of carriers lost to nonradiative recombination.Type: GrantFiled: April 9, 2009Date of Patent: September 27, 2011Assignee: Philips Lumides Lighting Company LLCInventors: James C. Kim, Stephen A. Stockman
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Patent number: 7808011Abstract: A semiconductor light emitting device includes an in-plane active region that emits linearly-polarized light. An in-plane active region may include, for example, a {11 20} or {10 10} InGaN light emitting layer. In some embodiments, a polarizer oriented to pass light of a polarization of a majority of light emitted by the active region serves as a contact. In some embodiments, two active regions emitting the same or different colored light are separated by a polarizer oriented to pass light of a polarization of a majority of light emitted by the bottom active region, and to reflect light of a polarization of a majority of light emitted by the top active region. In some embodiments, a polarizer reflects light scattered by a wavelength converting layer.Type: GrantFiled: March 19, 2004Date of Patent: October 5, 2010Assignees: Koninklijke Philips Electronics N.V., Philips Lumileds Lights Co., LLCInventors: James C. Kim, John E. Epler, Nathan F. Gardner, Michael R. Krames, Jonathan J. Wierer, Jr.
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Publication number: 20100226404Abstract: A semiconductor light emitting device includes an in-plane active region that emits linearly-polarized light. An in-plane active region may include, for example, a {11 20} or {10 10} InGaN light emitting layer. In some embodiments, a polarizer oriented to pass light of a polarization of a majority of light emitted by the active region serves as a contact. In some embodiments, two active regions emitting the same or different colored light are separated by a polarizer oriented to pass light of a polarization of a majority of light emitted by the bottom active region, and to reflect light of a polarization of a majority of light emitted by the top active region. In some embodiments, a polarizer reflects light scattered by a wavelength converting layer.Type: ApplicationFiled: May 18, 2010Publication date: September 9, 2010Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: James C. Kim, John E. Epler, Nathan F. Gardner, Michael R. Krames, Jonathan J. Wierer, JR.
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Publication number: 20100047957Abstract: A method and apparatus for solar cell having graded energy wells is provided. The active region of the solar cell comprises nanostructures. The nanostructures are formed from a material that comprises a III-V compound semiconductor and an element that alters the band gap of the III-V compound semiconductor. For example, the III-V compound semiconductor could be gallium nitride (GaN). As an example, the “band gap altering element” could be indium (In). The concentration of the indium in the active region is non-uniform such that the active region has a number of energy wells, separated by barriers. The energy wells may be “graded”, by which it is meant that the energy wells have a different band gap from one another, generally increasing or decreasing from one well to another monotonically.Type: ApplicationFiled: November 3, 2009Publication date: February 25, 2010Inventors: James C. Kim, Sungsoo Yi
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Patent number: 7629532Abstract: A method and apparatus for solar cell having graded energy wells is provided. The active region of the solar cell comprises nanostructures. The nanostructures are formed from a material that comprises a III-V compound semiconductor and an element that alters the band gap of the III-V compound semiconductor. For example, the III-V compound semiconductor could be gallium nitride (GaN). As an example, the “band gap altering element” could be indium (In). The concentration of the indium in the active region is non-uniform such that the active region has a number of energy wells, separated by barriers. The energy wells may be “graded”, by which it is meant that the energy wells have a different band gap from one another, generally increasing or decreasing from one well to another monotonically.Type: GrantFiled: December 29, 2006Date of Patent: December 8, 2009Assignee: Sundiode, Inc.Inventors: James C. Kim, Sungsoo Yi
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Publication number: 20090191658Abstract: A semiconductor light emitting device includes an active region, an n-type region, and a p-type region comprising a portion that extends into the active region. The active region may include multiple quantum wells separated by barrier layers, and the p-type extension penetrates at least one of the quantum well layers. The extensions of the p-type region into the active region may provide uniform filling of carriers in the individual quantum wells of the active region by providing direct current paths into individual quantum wells. Such uniform filling may improve the operating efficiency at high current density by reducing the carrier density in the quantum wells closest to the bulk p-type region, thereby reducing the number of carriers lost to nonradiative recombination.Type: ApplicationFiled: April 9, 2009Publication date: July 30, 2009Applicants: KONINKLIJKE PHILIPS ELECTRONICS N.V., PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: James C. KIM, Stephen A. STOCKMAN
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Patent number: 7535031Abstract: A semiconductor light emitting device includes an active region, an n-type region, and a p-type region comprising a portion that extends into the active region. The active region may include multiple quantum wells separated by barrier layers, and the p-type extension penetrates at least one of the quantum well layers. The extensions of the p-type region into the active region may provide uniform filling of carriers in the individual quantum wells of the active region by providing direct current paths into individual quantum wells. Such uniform filling may improve the operating efficiency at high current density by reducing the carrier density in the quantum wells closest to the bulk p-type region, thereby reducing the number of carriers lost to nonradiative recombination.Type: GrantFiled: September 13, 2005Date of Patent: May 19, 2009Assignee: Philips Lumiled Lighting, Co. LLCInventors: James C. Kim, Stephen A. Stockman
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Publication number: 20080156366Abstract: A method and apparatus for solar cell having graded energy wells is provided. The active region of the solar cell comprises nanostructures. The nanostructures are formed from a material that comprises a III-V compound semiconductor and an element that alters the band gap of the III-V compound semiconductor. For example, the III-V compound semiconductor could be gallium nitride (GaN). As an example, the “band gap altering element” could be indium (In). The concentration of the indium in the active region is non-uniform such that the active region has a number of energy wells, separated by barriers. The energy wells may be “graded”, by which it is meant that the energy wells have a different band gap from one another, generally increasing or decreasing from one well to another monotonically.Type: ApplicationFiled: December 29, 2006Publication date: July 3, 2008Inventors: James C. Kim, Sungsoo Yi
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Publication number: 20080149946Abstract: In accordance with embodiments of the invention, a III-nitride structure includes a plurality of posts of semiconductor material corresponding to openings in a mask layer. Each post includes a light emitting layer. Each light emitting layer is disposed between an n-type region and a p-type region. A first light emitting layer disposed in a first post is configured to emit light at a different wavelength than a second light emitting layer disposed in a second post. In some embodiments, the wavelength emitted by each light emitting layer is controlled by controlling the diameter of the posts, such that a device that emits white light without phosphor conversion may be formed.Type: ApplicationFiled: December 22, 2006Publication date: June 26, 2008Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: James C. Kim, Sungsoo Yi