Patents by Inventor James C. Lai

James C. Lai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5925915
    Abstract: A pair of complementary MOSFET's having regions of a common conductivity type separating the source and drain regions thereof which are provided on a support structure formed of an electrical insulating layer on a semiconductor material base. MOSFET's has a gate oxide layer on which is provided a gate semiconductor structure, with these structures each being of a common conductivity type and located across the gate oxide layers from the corresponding common conductivity type region.
    Type: Grant
    Filed: May 31, 1994
    Date of Patent: July 20, 1999
    Assignee: Honeywell Inc.
    Inventors: Michael S. Liu, James C. Lai